TPC6003 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII); 东芝场效应晶体管硅N沟道MOS型（ U- MOSIII ）
| 型号： | TPC6003 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 文件： | 总6页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
Notebook PC Applications
Portable Equipment Applications
Unit: mm
·
·
·
·
Low drain-source ON resistance: R
= 19 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 7 S (typ.)
fs
= 10 µA (max) (V
Low leakage current: I
= 30 V)
DS
= 10 V, I = 1 mA)
D
DSS
Enhancement-model: V = 1.3 to 2.5 V (V
th DS
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
30
30
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
±20
DC
I
6
D
(Note 1)
Pulse
(Note 1)
Drain current
A
I
24
2.2
0.7
DP
JEDEC
JEITA
―
―
Drain power dissipation
Drain power dissipation
(t = 5 s)
(Note 2a)
(t = 5 s)
P
W
W
D
D
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
P
(Note 2b)
Single pulse avalanche energy(Note 3)
Avalanche current
E
5.8
3
mJ
A
AS
I
Circuit Configuration
AR
Repetitive avalanche energy (Note 4)
Channel temperature
E
0.22
mJ
°C
°C
AR
6
5
4
3
T
150
ch
Storage temperature range
T
-55 to 150
stg
Thermal Characteristics
1
2
Characteristics
Symbol
Max
56.8
Unit
Thermal resistance, channel to ambient
Marking (Note 5)
R
°C/W
th (ch-a)
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s) (Note 2b)
(Note 2a)
R
178.5
°C/W
th (ch-a)
S 2 D
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
1
2002-01-15
TPC6003
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
¾
¾
±10
10
¾
mA
mA
GSS
GS
DS
DS
Drain cut-OFF current
= 30 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
30
15
1.3
¾
¾
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= -20 V
¾
¾
V
V
V
V
V
= 10 V, I = 1 mA
¾
2.5
32
24
¾
th
DS
GS
GS
DS
D
= 4.5 V, I = 3 A
25
D
Drain-source ON resistance
R
mW
S
DS (ON)
= 10 V, I = 3 A
¾
19
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 3 A
3.5
¾
7
D
C
iss
1250
155
170
¾
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
C
rss
¾
¾
DS
C
oss
¾
¾
Rise time
t
¾
¾
¾
¾
¾
5
¾
¾
¾
¾
¾
r
I
= 3 A
D
10 V
0 V
V
GS
V
OUT
Turn-ON time
Switching time
t
11
9
on
ns
Fall time
t
f
~
-
V
15 V
DD
Turn-OFF time
t
63
25
off
<
Duty 1%, t = 10 ms
=
w
Total gate charge
Q
g
(gate-source plus gate-drain)
~
-
V
24 V, V
= 10 V, I = 6 A
nC
DD
GS
D
Gate-source charge
Q
Q
¾
¾
20
5
¾
¾
gs
Gate-drain (“miller”) charge
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Pulse drain reverse current
Forward voltage (Diode)
(Note 1)
I
¾
¾
¾
¾
¾
24
A
V
DRP
V
I
= 6 A, V = 0 V
GS
-1.2
DSF
DR
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 ´ 25.4 ´ 0.8
Unit: (mm)
FR-4
2510 ms*
(a)
(b)
Note 3: V
DD
= 24 V, T = 25°C (initial), L = 0.5 mH, R = 25 W, I = 3.0 A
ch AR
G
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking “·” locates on the left lower side of parts number marking “S2D” indicates terminal
No.1.
2
2002-01-15
TPC6003
I
– V
I – V
D DS
D
DS
5
4
3
2
1
0
10
8
4
6, 8, 10
3.2
10
2.8
2.7
3
6
2.8
2.6
3
4
8
2.7
2.6
2.5
6
4
2.5
V
= 2.3 V
GS
V
GS
= 2.4 V
2
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
0
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
12
10
0.6
0.5
0.4
0.3
0.2
0.1
0
Common source
Ta = 25°C
Common source
= 10 V
V
DS
Pulse test
Pulse test
8
6
4
2
0
25°C
I
= 6 A
D
100°C
Ta = -55°C
3 A
1.5 A
2
0
1
2
3
4
5
0
4
6
8
10
Gate-source voltage
V
(V)
Gate-source voltage
V
(V)
GS
GS
|Y | – I
fs
R
– I
D
DS (ON) D
100
100
50
30
4.5 V
30
10
Ta = -55°C
V
GS
= 10 V
10
25°C
5
3
100°C
3
1
Common source
= 10 V
Common source
T = 25°C
a
Pulse test
V
DS
Pulse test
1
1
3
5
10
30 50
100
0.1
0.3
1
3
10
30
100
Dain current
I
D
(A)
Drain current
I
D
(A)
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2002-01-15
TPC6003
R
– Ta
I
– V
DR
DS (ON)
DS
100
50
40
30
20
10
0
Common source
Pulse test
30
10
I
= 6 A
D
I
= 1.5 A, 3 A
D
3
1
V
GS
= 4.5 V
I
= 1.5 A, 3 A, 6 A
D
V
GS
= 10 V
0.3
0.1
Common source
Ta = 25°C
Pulse test
0
-0.4
-0.8
-1.2
-1.6
-2.0
-80
-40
0
40
80
120
160
100
160
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
3.5
3.0
2.5
2.0
1.5
1.0
10000
3000
1000
Common source
= 10 V
V
DS
= 1 mA
I
D
Pulse test
C
iss
300
100
C
oss
C
rss
Common source
30
10
V
= 0 V
GS
0.5
0
f = 1 MHz
Ta = 25°C
0.1
0.3
1
3
10
30
-80
-40
0
40
80
120
160
Drain-source voltage
V
Ambient temperature Ta (°C)
DS
P
– Ta
Dynamic input/output characteristics
D
2.5
2
50
40
25
Common source
= 6 A
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(1) t = 5 s
I
D
Ta = 25°C
Pulse test
20
15
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
12 V
6 V
1.5
1
30
20
10
V
GS
(1) DC
V
= 24 V
DD
10
5
V
DD
= 24 V
12 V
6 V
(2) t = 5 s
0.5
0
(2) DC
0
0
0
40
80
120
0
8
16
Total gate charge
24
32
40
Ambient temperature Ta (°C)
Q
(nC)
g
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2002-01-15
TPC6003
r
th
- t
w
1000
300
100
Device mounted on a glass-
epoxy board (b) (Note 2b)
30
10
Device mounted on a glass-
epoxy board (a) (Note 2a)
3
1
0.3
0.1
Single pulse
0.001
0.01
0.1
1
10
100
1000
Pulse
t
(s)
w
Safe operating area
100
I
max (pulsed)*
D
30
10
1 ms*
10 ms*
3
1
0.3
0.1
0.03
0.01
*: Single nonrepetitive pulse
Ta = 25°C
V
max
DSS
Curves must be derated
linearly with increase in
temperature
0.003
0.001
0.01 0.03
0.1
0.3
1
3
10
(V)
30
100
Drain-source voltage
V
DS
5
2002-01-15
TPC6003
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-15
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