TPC6108_08 [TOSHIBA]
Notebook PC Applications; 笔记本电脑应用
| 型号： | TPC6108_08 |
| 厂家： | 
TOSHIBA |
| 描述： | Notebook PC Applications |
| 文件： | 总7页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6108
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅣ)
TPC6108
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON-resistance: R = 50 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 7.4 S (typ.)
fs
Low leakage current: I
= −10 μA (max) (V
= −30 V)
DSS
DS
Enhancement mode: V = −0.8 to −2.0 V (V
= −10 V, I = −1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
−30
−30
±20
−4.5
−18
2.2
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
Source
Drain
Drain
Drain
Gate
V
GSS
Drain
DC
Pulse
(Note 1)
(Note 1)
I
D
Drain current
A
I
DP
JEDEC
―
―
Drain power dissipation (t = 5 s) (Note 2a)
Drain power dissipation (t = 5 s) (Note 2b)
P
D
D
W
P
0.7
JEITA
Single-pulse avalanche energy
Avalanche current
(Note 3)
E
1.3
mJ
A
AS
AR
TOSHIBA
2-3T1A
I
−2.25
Weight: 0.011 g (typ.)
Repetitive avalanche energy
Single-device value at dual operation
E
0.22
mJ
AR
(Note 4)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
6
5
4
Characteristics
Symbol
Max
56.8
Unit
°C/W
°C/W
Thermal resistance, channel to ambient (t = 5 s)
R
th (ch-a)
th (ch-a)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
R
178.5
(Note 2b)
1
2
3
Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
1
2008-12-04
TPC6108
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V
= −30 V, V
= 0 V
= 0 V
= 0 V
= 20 V
⎯
⎯
⎯
⎯
±10
−10
⎯
μA
μA
GSS
GS
DS
DS
GS
GS
GS
Drain cut-off current
I
DSS
V
V
I
I
= −10 mA, V
= −10 mA, V
−30
−15
−0.8
⎯
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
⎯
⎯
V
V
V
V
V
= −10 V, I = − 1 mA
⎯
−2.0
100
60
th
DS
GS
GS
DS
D
R
= −4.5 V, I = −2.2 A
75
50
7.4
570
75
85
DS (ON)
D
Drain-source ON-resistance
mΩ
S
R
= −10 V, I = −2.2 A
⎯
DS (ON)
D
Forward transfer admittance
Input capacitance
|Y |
fs
= −10 V, I = −2.2 A
3.7
⎯
⎯
D
C
C
⎯
iss
V
= −10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
Rise time
t
⎯
⎯
⎯
⎯
⎯
3.5
12
21
70
13
⎯
⎯
⎯
⎯
⎯
r
I
= −2.2 A
D
0 V
V
GS
V
OUT
−10 V
Turn-on time
Switching time
t
on
Fall time
t
f
V
≈ −15 V
DD
Turn-off time
t
off
Duty ≤ 1%, t = 10 μs
w
Total gate charge
(gate-source plus gate-drain)
Q
g
V
I
≈ −24 V, V
DD
= −4.5 A
≈ −10 V,
GS
nC
Gate-source charge1
Q
gs1
⎯
⎯
1.8
2.5
⎯
⎯
D
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
−18
A
V
DRP
V
I
= −4.5 A, V = 0 V
GS
1.2
DSF
DR
2
2008-12-04
TPC6108
Marking (Note 5)
Lot No. (weekly code)
Lot code (month)
Part No.
(or abbreviation code)
S3H
Product-specific code
Pin #1
Lot code
(year)
A line indicates
Lead (Pb)-Free package
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: V
= −24 V, T = 25°C (initial), L = 0.2 mH, R = 25 Ω, I
= -2.25 A
AR
DD
ch
G
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ●to the lower left of the Part No. marking indicates Pin 1.
3
2008-12-04
TPC6108
I
– V
I – V
D DS
D
DS
−5
−4
−3
−2
−1
0
−10
−8
−6
−4
−2
0
−10
Common source
Ta = 25°C
Pulse Test
−4 −3.5
Common source
Ta = 25°C
Pulse Test
−3.5
−4
−10
−4.5
−4.5
−3
−2.8
−3
−2.8
−2.6
−2.6
−2.4
−2.4
V
= −2.2V
GS
V
= −2.2V
GS
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
−1
−2
−3
−4
−5
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
−15
−1.0
−0.8
−0.6
−0.4
−0.2
0
Common source
= −10 V
Pulse Test
Common source
Ta = 25°C
Pulse Test
V
DS
100
Ta = −55°C
−10
−5
0
25
I
= −4.5 A
D
−2.2
−1.1
−2
0
−4
−6
−8
−10
0
−1
−2
−3
−4
−5
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y | – I
fs
R
– I
DS (ON) D
D
1000
100
10
100
10
Common source
= −10 V
V
DS
Pulse Test
Ta = −55°C
100
V
= −4.5 V
−10
GS
25
1
Common source
Ta = 25°C
Pulse Test
0.1
−0. 1
−1
−10
−100
−0.1
−1
−10
−100
Drain current
I
(A)
Drain current
I
(A)
D
D
4
2008-12-04
TPC6108
R
− Ta
I
− V
DS
DS (ON)
DR
150
−100
−10
−1
Common source
Ta = 25°C
Pulse Test
Common source
Pulse Test
−10
I
= −1.1/−2.2/−4.5 A
D
−5
100
50
0
V
= −4.5 V
GS
−3
I
= −1.1/−2.2/−4.5 A
D
V
= −10 V
GS
−1
V
= 0 V
GS
−0.1
−80
−40
0
40
80
120
160
0
0.2
0.6
1.0
1.2
0.4
0.8
Ambient temperature Ta (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
− Ta
th
DS
10000
1000
100
−2.0
Common source
= 0 V
V
GS
f = 1 MHz
Ta = 25°C
−1.6
−1.2
C
iss
−0.8
−0.4
0
C
oss
Common source
= −10 V
V
C
rss
GS
= −1 mA
I
D
Pulse Test
10
−80
−40
0
40
80 120
160
−0.1
−1
−10
−100
Drain-source voltage
V
DS
(V)
Ambient temperature Ta (°C)
Dynamic input / output
characteristics
P
− Ta
D
−40
−16
−12
−8
2.5
(1) Device mounted on a
(1) t = 5s
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
2.0
1.5
1.0
0.5
−30
−20
−10
−12 V
−6 V
V
DS
(1) DC
V
= −24 V
DD
(2) t = 5s
−4
Common source
V
(2) DC
GS
8
I
= −4.5 A
D
Ta = 25°C
Pulse Test
0
0
0
0
4
12
0
40
80
120
160
20
16
Ambient temperature Ta (°C)
Total gate charge
Q
(nC)
g
5
2008-12-04
TPC6108
r
th
− t
w
1000
100
10
Device mounted on a glass-epoxy
board (b) (Note 2b)
Device mounted on
board (a) (Note 2a)
a glass-epoxy
1
SINGLE PULSE
100
0.1
1m
10m
100m
1
10
1000
Pulse width tw (S)
Safe Operating Area
−100
I
max (pulse) *
D
1 ms *
−10
10 ms *
−1
※ Single pulse Ta=25℃
Curves must be derated linearly
with increase in temperature.
V
max
DSS
−0.1
−0.1
−1
−10
−100
Drain-source voltage
V
DS
(V)
6
2008-12-04
TPC6108
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2008-12-04
相关型号：
TPC6109-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
TOSHIBA
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