TPC8014 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III); 东芝场效应晶体管硅N沟道MOS型（U - MOS III ）
| 型号： | TPC8014 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) |
| 文件： | 总7页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC8014
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8014
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications
Notebook PC Applications
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R = 11 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 10 S (typ.)
fs
Low leakage current: I
= 10 µA (max) (V = 30 V)
DS
DSS
Enhancement mode: V = 1.3 to 2.5 V (V
= 10 V, I = 1 mA)
D
th DS
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
30
30
V
V
V
DSS
Drain-gate voltage (R
= 20 kΩ)
V
DGR
GS
V
±20
11
Gate-source voltage
GSS
DC
(Note 1)
I
D
Drain current
A
JEDEC
JEITA
―
―
Pulse (Note 1)
I
44
DP
Drain power dissipation
Drain power dissipation
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
P
1.9
1.0
W
W
D
D
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
P
Single pulse avalanche energy
(Note 3)
E
157
11
mJ
A
AS
Circuit Configuration
Avalanche current
I
AR
8
7
6
5
Repetitive avalanche energy
E
0.19
mJ
AR
(Note 2a) (Note 4)
T
150
°C
°C
Channel temperature
ch
Storage temperature range
T
stg
−55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
1
2
3
4
1
2004-07-06
TPC8014
Thermal Characteristics
Characteristics
Symbol
Max
65.8
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
R
125
°C/W
th (ch-a)
(t = 10 s)
(Note 2b)
Marking (Note 5)
T P C 8 0 1 4
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
V
DD
= 24 V, T = 25°C (initial), L = 1.0 mH, R = 25 Ω, I = 11 A
ch AR
G
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
2
2004-07-06
TPC8014
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
30
15
1.3
⎯
⎯
5
⎯
⎯
±10
10
⎯
µA
µA
GSS
GS
DS
DS
Drain cut-OFF current
I
= 30 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= −20 V
⎯
⎯
V
V
V
V
V
= 10 V, I = 1 mA
⎯
2.5
22
14
⎯
th
DS
GS
GS
DS
D
= 4.5 V, I = 5.5 A
15
D
Drain-source ON resistance
R
mΩ
S
DS (ON)
= 10 V, I = 5.5 A
11
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 5.5 A
10
D
C
C
⎯
⎯
⎯
1860
270
320
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
pF
Reverse transfer capacitance
Output capacitance
⎯
DS
GS
rss
C
oss
⎯
Rise time
t
⎯
⎯
⎯
⎯
⎯
9
⎯
⎯
⎯
⎯
⎯
r
I
= 5.5 A
D
10 V
V
GS
V
OUT
0 V
Turn-ON time
Switching time
t
19
20
69
39
on
ns
Fall time
t
f
∼
V
15 V
DD
Turn-OFF time
t
off
<
Duty 1%, t = 10 µs
w
Total gate charge
Q
g
(gate-source plus gate-drain)
V
24 V, V
= 10 V, I = 11 A
nC
DD
GS
D
Gate-source charge 1
Q
⎯
⎯
4
9
⎯
⎯
gs1
Gate-drain (“miller”) charge
Q
gd
Source-Drain Ratings and Characteristics
=
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
44
A
V
DRP
V
I
= 11 A, V = 0 V
GS
−1.2
DSF
DR
3
2004-07-06
TPC8014
I
– V
I
– V
DS
D
DS
D
20
16
12
8
10
8
3.3
3.4
10
3.2
3.1
8
6
4
3.5
4
6
8
10
3.2
3.3
3.0
3.
3.1
3.4
6
2.9
2.8
3.0
4
2.9
2.8
2.7
2.7
2.6
4
2
V
= 2.6 V
V
GS
= 2.5 V
GS
0
0
0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
– V
V – V
DS GS
D
GS
20
16
12
8
1
0.8
0.6
0.4
0.2
0
Common source
Ta = 25°C
Pulse test
Common source
= 10 V
V
DS
Pulse test
100
Ta = −55°C
25
2.5
5.5
4
I
= 11A
D
0
0
1
1.5
2
2.5
3
2.5
4
0
4
8
12
16
(V)
20
0.5
Gate-source voltage
V
(V)
Gate-source voltage
V
D
GS
GS
|Y | – I
fs
R
– I
DS (ON)
D
100
Common source
Ta = 25°C
Pulse test
30
10
−55°C
Tc = 100°C
V
GE
= 4.5 V
V
GS
= 10 V
25°C
3
1
Common source
= 10 V
V
DS
Pulse test
0.1
1
10
(A)
100
1
3
10
Drain current
30
100
Drain current
I
D
I
D
(A)
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2004-07-06
TPC8014
R
– Ta (α)
I
– V
DS
DS (ON)
DR
25
20
15
10
5
100
10
1
5
I
= 11, 5.5, 2.5 A
D
10
1
3
V
= 10 V
GS
V
GS
= 4.5 V
I
D
= 11, 5.5, 2.5 A
10
Common source
Ta = 25°C
Pulse test
Common source
Pulse test
0
−80
0.1
0
−40
0
40
80
120
160
100
200
0.2
0.4
0.6
0.8
1
1.2
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
10000
1000
100
3
2.5
2
C
iss
1.5
1
C
oss
C
rss
Common source
= 10 V
V
DS
Common source
= 10 V
0.5
0
V
GS
= 1 mA
I
D
= 1 mA
I
D
Pulse test
Pulse test
10
0.1
1
10
−80
−40
0
40
80
120
Drain-source voltage
V
(V)
Ambient temperature Ta (°C)
DS
P
D
– Ta
Dynamic input/output characteristics
2
1.6
1.2
0.8
0.4
0
30
25
20
15
10
5
30
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
Common source
(1)
(2)
Ta = 25°C
25
20
15
10
5
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
I
= 11 A
D
Pulse test
V
= 24 V
DD
t = 10 s
V
DS
6
12
6
12
V
= 24 V
DD
0
0
0
60
0
50
100
150
10
20
30
40
50
Ambient temperature Ta (°C)
Total gate charge
Q
(nC)
g
5
2004-07-06
TPC8014
r
− t
th
w
1000
100
10
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(1)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
1
Single pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(S)
Safe operating area
100
10
1 ms*
I
D
max (pluse) *
10 ms*
1
0.1
*
Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
10
(V)
0.01
0.01
0.1
1
100
Drain-source voltage
V
DS
6
2004-07-06
TPC8014
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
7
2004-07-06
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