TPC8117(TE12L,Q) [TOSHIBA]
TRANSISTOR 18000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal;
| 型号： | TPC8117(TE12L,Q) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 18000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal |
| 文件： | 总7页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC8117
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPC8117
Lithium Ion Battery Applications
Notebook PC Applications
Unit: mm
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON-resistance
High forward transfer admittance
: R
= 3.0 mΩ (typ.)
DS (ON)
: |Y | = 54 S (typ.)
fs
Low leakage current: I
= −10 μA (max) (V
= −30 V)
DSS
DS
Enhancement mode: V = −0.8 to −2.0 V (V
= −10 V, I = −1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
−30
−30
±20
−18
−72
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
DP
Drain power dissipation (t = 10 s)
(Note 2a)
JEDEC
JEITA
―
―
P
1.9
1.0
W
W
D
D
Drain power dissipation (t = 10 s)
(Note 2b)
P
TOSHIBA
2-6J1B
Single pulse avalanche energy
(Note 3)
E
211
−18
mJ
A
AS
Weight: 0.080 g (typ.)
Avalanche current
I
AR
Repetitive avalanche energy
E
0.030
mJ
AR
(Note 2a) (Note 4)
Circuit Configuration
Channel temperature
T
150
°C
°C
ch
8
7
6
5
Storage temperature range
T
−55 to 150
stg
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
1
2
3
4
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8117
Thermal Characteristics
Characteristics
Symbol
Max
65.8
125
Unit
°C/W
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
th (ch-a)
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
R
(t = 10 s)
(Note 2b)
Marking (Note 5)
T P C 8 1 1 7
Part No. (or abbreviation code)
Lot No.
(weekly code)
Note 6
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
V
DD
= −24 V, T = 25°C (initial), L = 500 μH, R = 25 Ω, I = −18 A
AR
ch
G
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note 6: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
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TPC8117
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±20 V, V
= −30 V, V
= 0 V
= 0 V
= 0 V
= 20 V
⎯
⎯
⎯
⎯
±100
−10
⎯
nA
GSS
GS
DS
DS
GS
GS
GS
Drain cut-OFF current
I
μA
DSS
V
V
I
I
= −10 mA, V
= −10 mA, V
−30
−13
−0.8
⎯
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
⎯
⎯
V
V
V
V
V
= −10 V, I = −1 mA
⎯
−2.0
7.9
3.9
⎯
th
DS
GS
GS
DS
D
= −4 V, I = −9 A
5.5
3.0
54
D
Drain-source ON-resistance
R
mΩ
S
DS (ON)
= −10 V, I = −9 A
⎯
D
Forward transfer admittance
Input capacitance
|Y |
fs
= −10 V, I = −9 A
27
D
C
C
⎯
4600
970
1500
⎯
iss
V
= −10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
Rise time
t
⎯
⎯
⎯
⎯
⎯
10
20
⎯
⎯
⎯
⎯
⎯
r
0 V
I
= −9 A
D
V
GS
V
OUT
−10 V
Turn-ON time
Switching time
t
on
ns
Fall time
t
300
800
130
f
V
≈ −15 V
DD
Turn-OFF time
t
off
Duty ≤ 1%, t = 10 μs
w
Total gate charge
Q
g
(gate-source plus gate-drain)
V
I
≈ −24 V, V
DD
= −18 A
= −10 V,
GS
nC
Gate-source charge 1
Q
⎯
⎯
12
40
⎯
⎯
D
gs1
Gate-drain (“miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Pulse
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
(Note 1)
I
⎯
⎯
⎯
⎯
⎯
−72
A
V
DRP
Forward voltage (diode)
V
I
= −18 A, V = 0 V
GS
1.2
DSF
DR
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TPC8117
I
– V
I
– V
DS
D
DS
D
−20
−16
−12
−8
−50
−40
−30
−20
−10
0
−4 −3
−3
−3.2
−4
−6
−10
−2.6
−2.8
−2.8
Common source
Ta = 25°C
Pulse test
−6
Common source
Ta = 25°C
Pulse test
−8
−10
−2.6
−2.4
−2.4
−4
V
= −2.2 V
V
= −2.2 V
GS
GS
0
0
−0.2
−0.4
−0.6
−0.8
−1
0
−1
−2
−3
−4
Drain−source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
−0.5
−0.4
−0.3
−0.2
−0.1
0
−80
−60
−40
−20
0
Common source
Ta = 25°C
Pulse test
Common source
= −10 V
V
DS
Pulse test
−4.5
−9
100
Ta = −55°C
I
= −18 A
D
25
0
−4
−8
−12
−16
−20
0
−1
−2
−3
−4
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
|Y | – I
fs
R
– I
D
DS (ON) D
1000
100
10
100
10
1
Common source
Ta = 25°C
Pulse test
Ta = −55°C
−4
25
100
V
= −10 V
GS
1
Common source
= −10 V
V
DS
Pulse test
0.1
−0.1
0.1
−0.1
−1
−10
−100
−1
−10
−100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2009-09-29
TPC8117
R
– Ta
I
– V
DR DS
DS (ON)
10
8
−100
−10
−1
Common source
Pulse test
−10
−3
I
= −4.5, −9, −18 A
D
−5
−1
V
= 0 V
GS
6
4
V
= −4 V
GS
V
I
= −4.5, −9, −18 A
D
2
= −10 V
Common source
Ta = 25°C
Pulse test
GS
0
−80
−0.1
−40
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1
1.2
Ambient temperature Ta (°C)
Drain−source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
10000
1000
100
−2
−1.6
−1.2
−0.8
C
iss
C
oss
C
rss
Common source
Common source
= 0 V
f = 1 MHz
−0.4
V
= −10 V
DS
= −1 mA
V
GS
I
D
Pulse test
Ta = 25°C
0
−80
−0.1
−1
−10
−100
−40
0
40
80
120
160
Drain−source voltage
V
(V)
Ambient temperature Ta (°C)
DS
Dynamic input/output
characteristics
P
– Ta
D
2
−30
−20
−10
0
−30
(1) Device mounted on a
Common source
I = −18 A
D
Ta = 25°C
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
t = 10 s
(1)
V
= −24V
DD
1.6
Pulse test
−20
−10
0
V
DS
1.2
0.8
(2)
−6
−12
−6
V
= −24V
DD
−12
V
GS
0.4
0
0
40
80
120
160
200
0
40
80
120
160
200
Ambient temperature Ta (°C)
Total gate charge
Q
g
(nC)
5
2009-09-29
TPC8117
r
th
− t
w
1000
100
10
(1)Device mounted on a glass-epoxy board (a)(Note 2a)
(2)Device mounted on a glass-epoxy board (b)(Note 2b)
(2)
(1)
1
Single pulse
100
0.1
0.001
0.01
0.1
1
10
1000
Pulse width
t
(s)
w
Safe operating area
−100
−10
−1
I
max (Pulse) *
D
1 ms *
t = 10 ms *
*
Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
−0.1
−0.1
−1
−10
−100
Drain−source voltage
V
(V)
DS
6
2009-09-29
TPC8117
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
7
2009-09-29
相关型号：
TPC8117(TE12LQ,M)
TRANSISTOR 18000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal
TOSHIBA
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