TPC8301(TE12L) [TOSHIBA]
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,3.5A I(D),SO;
| 型号： | TPC8301(TE12L) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,3.5A I(D),SO |
| 文件： | 总7页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
TPC8301
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Unit: mm
ꢀ Small footprint due to small and thin package
ꢀ Low drain−source ON resistance : R
= 95 mΩ (typ.)
DS (ON)
ꢀ High forward transfer admittance : |Y | = 4 S (typ.)
fs
ꢀ Low leakage current : I
= −10 µA (max) (V
= −30 V)
DSS
DS
= −10 V, I = −1 mA)
ꢀ Enhancement−mode : V = −0.8~ −2.0 V (V
th
DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
−30
−30
±20
−3.5
−14
V
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
D C
(Note 1)
(Note 1)
I
D
Drain current
A
Pulse
I
DP
JEDEC
JEITA
―
―
Single-device
P
P
P
P
1.5
Drain power
dissipation
(t = 10 s)
D (1)
operation (Note 3a)
W
Single-devece value
at dual operation
(Note 3b)
TOSHIBA
2-6J1E
1.0
D (2)
D (1)
D (2)
(Note 2a)
Weight: 0.080 g (typ.)
Single-device
0.75
0.45
Drain power
dissipation
(t = 10 s)
operation (Note 3a)
W
Single-devece value
at dual operation
(Note 3b)
(Note 2b)
Circuit Configuration
Single pulse avalanche energy
E
16
mJ
A
AS
(Note 4)
Avalanche current
I
−3.5
0.10
AR
Repetitive avalanche energy
E
mJ
AR
(Note 2a, Note 3b, Note 5)
Channel temperature
T
150
℃
℃
ch
Storage temperature range
T
−55～150
stg
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
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TPC8301
Thermal Characteristics
Characteristics
Symbol
Max
83.3
Unit
Single-device operation
(Note 3a)
R
R
R
R
th (ch-a) (1)
Thermal resistance, channel to ambient
Single-device value at
dual operation
(Note 3b)
(t = 10 s)
(Note 2a)
125
167
278
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
°C/W
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
Single-device value at
dual operation
(Note 3b)
(t = 10 s)
(Note 2b)
Marking
TPC8301
Type
*
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= −24 V, T = 25°C (Initial), L = 1.0 mH, R = 25 Ω, I
ch
= −3.5 A
AR
G
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on lower left of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
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TPC8301
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±16 V, V = 0 V
—
—
—
—
±10
−10
—
µA
µA
V
GSS
GS
DS
DS
GS
GS
Drain cut−OFF current
I
= −30 V, V
= 0 V
= 0 V
DSS
(BR) DSS
Drain−source breakdown voltage
Gate threshold voltage
V
I
= −10 mA, V
−30
−0.8
—
—
D
V
V
V
V
V
= −10 V, I = −1 mA
—
−2.0
190
120
—
V
th
DS
GS
GS
DS
D
R
= −4 V, I = −1.8 A
155
95
4
DS (ON)
DS (ON)
D
Drain−source ON resistance
mΩ
R
= −10 V, I = −1.8 A
—
D
Forward transfer admittance
Input capacitance
|Y |
= −10 V, I = −1.8 A
2
S
fs
D
C
C
—
540
80
290
—
iss
V
= −10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
—
oss
Rise time
t
—
—
—
11
17
11
—
—
—
r
Turn−ON time
Switching time
t
on
Fall time
t
f
Turn−OFF time
t
—
—
70
18
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
≈ −24 V, V
= −10 V, I = −3.5 A
nC
DD
GS
D
Gate−source charge
Q
—
—
13
5
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
Pulse (Note 1)
I
—
—
—
—
—
−14
A
V
DRP
current
Forward voltage (diode)
V
I
= −3.5 A, V = 0 V
GS
1.2
DSF
DR
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TPC8301
4
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TPC8301
P
– Ta
D
2.0
1.5
1.0
0.5
0
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b)
(NOTE 2b)
(1)
(3) SINGLE-DEVICE OPERATION
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3a)
(NOTE 3b)
t = 10 s
(2)
(3)
(4)
0
50
100
150
200
AMBIENT TEMPERATURE Ta (°C)
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TPC8301
r
− t
w
th
1000
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
500
300
(4)
(3)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b)
(3) SINGLE-DEVICE OPERATION (NOTE 3a)
(2)
(1)
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
100
50
30
10
5
3
1
0.5
0.3
SINGLE PULSE
0.1
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH
t
(s)
w
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2002-05-17
TPC8301
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
7
2002-05-17
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