TPCP8507(TE85L) [TOSHIBA]

TRANSISTOR,BJT,NPN,120V V(BR)CEO,1A I(C),TSOP;
TPCP8507(TE85L)
型号: TPCP8507(TE85L)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR,BJT,NPN,120V V(BR)CEO,1A I(C),TSOP

文件: 总5页 (文件大小:171K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TPCP8507  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
TPCP8507  
High-Speed Switching Applications  
Unit: mm  
DC/DC Converters  
0.33±0.05  
A
M
0.05  
5
8
High DC current gain: hFE = 120~300 (IC = 0.1 A)  
Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)  
High-speed switching: tf = 0.2 μs (typ.)  
0.475  
1
4
B
B
M
0.05  
0.65  
2.9±0.1  
Absolute Maximum Ratings (Ta = 25°C)  
A
0.8±0.05  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
V
180  
150  
V
V
CBO  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-emitter voltage  
V
CEX  
+0.13  
-0.12  
1.12  
1.12  
V
V
120  
V
CEO  
+0.13  
-0.12  
7
V
EBO  
DC (Note 1)  
I
1.0  
A
C
+0.1  
0.28  
Collector current  
-0.11  
Pulsed (Note 1)  
I
2.0  
A
CP  
1. Collector 5. Emitter  
2. Collector 6. Collector  
3. Collector 7. Collector  
Base current  
I
0.1  
A
B
t = 10 s  
DC  
3.00  
1.25  
150  
W
W
°C  
°C  
Collector power  
dissipation  
P
(Note 2)  
C
4. Base  
8. Collector  
Junction temperature  
T
j
JEDEC  
Storage temperature range  
T
55~150  
stg  
JEITA  
Note 1: Ensure that the channel temperature does not exceed 150°C  
during use of the device.  
TOSHIBA  
2-3V1A  
Weight: 0.017 g (typ.)  
Note 2: Mounted on an FR4 board (glass epoxy; 1.6 mm thick; Cu area,  
645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-13  
TPCP8507  
Figure 1. Circuit configuration (top view)  
Figure 2. Marking (Note 4)  
8
7
6
5
8ꢀ 7 ꢀ6 ꢀ 5  
8507  
Type  
*
Lot No.  
1
2
3
4
1ꢀ 2ꢀ 3ꢀ 4  
Note 4:  
on lower left of the marking indicates Pin 1.  
* Weekly code: (Three digits)  
Week of manufacture  
(01 for first week of year, continues up to 52 or 53)  
Year of manufacture  
(One low-order digits of calendar year)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Collector cutoff current  
Symbol  
Test Condition  
= 180 V, IE = 0  
Min  
Typ.  
Max  
Unit  
I
V
V
100  
100  
nA  
nA  
V
CBO  
CB  
EB  
Emitter cutoff current  
I
= 7 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Collector-emitter breakdown voltage  
V
V
I
I
= 1 mA, IB = 0  
= 10 mA, IB = 0  
180  
120  
120  
60  
(BR) CBO  
C
C
V
(BR) CEO  
hFE(1)  
V
V
= 2 V, I = 0.1A  
300  
CE  
CE  
C
DC current gain  
hFE(2)  
= 2 V, I = 0.3A  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Storage time  
V
I
I
= 0.3 A, IB = 0.01A  
= 0.3 A, IB = 0.01A  
0.14  
1.1  
V
V
CE (sat)  
BE (sat)  
C
C
V
t
r
0.1  
1.5  
0.2  
See Figure 3 circuit diagram.  
72 V, RL = 240 Ω  
Storage time  
t
Switching time  
V
μs  
stg  
CC  
IB1 = −IB2 = 10mA  
Fall time  
t
f
Figure 3. Switching Time Test Circuit & Timing Chart  
V
CC  
OUT  
20 μs  
I
B1  
IN  
I
B1  
I
B2  
I
B2  
Duty cycle < 1 %  
2
2006-11-13  
TPCP8507  
I
– V  
hFE – I  
C
C
CE  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1000  
100  
8  
6  
5  
10  
100  
25  
4  
Ta = −55°C  
3  
2  
10  
IB = −1 mA  
Common emitter  
= 2 V  
Common emitter  
V
CE  
Ta = 25°C  
Single nonrepetitive pulse  
Single nonrepetitive pulse  
1
0.001  
0
2
4
6
8
10  
12  
0. 1  
1
10  
0.01  
Collector-emitter voltage  
V
(V)  
Collector current  
I
(A)  
C
CE  
V
– I  
V
– I  
BE (sat) C  
CE (sat)  
C
1
10  
Common emitter  
Common emitter  
β = 30  
β = 30  
Single nonrepetitive pulse  
Single nonrepetitive pulse  
Ta = −55°C  
0.1  
1
100  
25  
100  
25  
Ta = −55°C  
0.01  
0.001  
0.1  
0.001  
0.01  
0.1  
1
0.01  
0.1  
1
Collector current  
I
(A)  
Collector current  
I
(A)  
C
C
I – V  
C
BE  
1.0  
0.8  
0.6  
Common emitter  
= 2 V  
V
CE  
Single nonrepetitive pulse  
100  
0.4  
0.2  
25  
Ta = −55°C  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Base-emitter voltage  
V
(V)  
BE  
3
2006-11-13  
TPCP8507  
r
th  
– t  
w
1000  
100  
10  
Curves apply only to limited areas of thermal resistance.  
Single nonrepetitive pulse Ta = 25°C  
Mounted on an FR4 board (glass epoxy; 1.6 mm thick;  
Cu area, 645 mm2)  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width tw (S)  
Safe Operating Area  
10  
1
10ms*  
1ms* 100μs*  
10μs*  
I
max (pulsed)*  
C
I
max (continuous)  
C
DC operation  
Ta = 25°C  
0.1  
*:Single nonrepetitive pulse  
Ta = 25°C  
Note that the curves for 100ms*,10s*  
and DC operation will be different  
when the devices aren’t mounted on  
FR4 board (glass epoxy, 1.6 mm  
thick, Cu area: 645 mm2).These  
characteristic curves must be derated  
linearly with increase in temperature.  
10 s*  
0.01  
0.001  
100 ms*  
V
max  
CEO  
(V)  
0.1  
1
10  
100  
1000  
Collector-emitter voltage  
V
CE  
4
2006-11-13  
TPCP8507  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must  
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,  
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
5
2006-11-13  

相关型号:

TPCP8507(TE85L,F)

TRANSISTOR,BJT,NPN,120V V(BR)CEO,1A I(C),TSOP
TOSHIBA

TPCP8510

Transistor Silicon NPN Epitaxial Type
TOSHIBA

TPCP8511

TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power
TOSHIBA

TPCP8511(TE85L,F)

TPCP8511(TE85L,F)
TOSHIBA

TPCP8601

Silicon PNP Epitaxial Type (PCT Process)
TOSHIBA

TPCP8601(TE85L)

TRANSISTOR,BJT,PNP,20V V(BR)CEO,4A I(C),TSOP
TOSHIBA

TPCP8602

High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
TOSHIBA

TPCP8602(TE85L,F)

TPCP8602(TE85L,F)
TOSHIBA

TPCP8603

High-Speed Switching Applications DC/DC Converters Strobe Applications
TOSHIBA

TPCP8604

TRANSISTOR 0.3 A, 400 V, NPN, Si, POWER TRANSISTOR, 2-3V1D, 8 PIN, BIP General Purpose Power
TOSHIBA

TPCP8604(TE85L)

TRANSISTOR,BJT,NPN,400V V(BR)CEO,300MA I(C),TSOP
TOSHIBA

TPCP8604(TE85L,F)

TRANSISTOR,BJT,NPN,400V V(BR)CEO,300MA I(C),TSOP
TOSHIBA