TPCP8A05-H [TOSHIBA]
TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3V1K, 8 PIN, FET General Purpose Small Signal;型号: | TPCP8A05-H |
厂家: | TOSHIBA |
描述: | TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3V1K, 8 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPCP8A05-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
Silicon N-Channel MOS Type (U-MOS V-H)
TPCP8A05-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Unit: mm
0.33±0.05
Portable Equipment Applications
A
M
0.05
5
8
•
Built-in a Schottky barrier diode
Low forward voltage: V
High-speed switching
Small gate charge: Q
= −0.6 V (max)
DSF
•
•
•
•
•
•
0.475
1
4
B
B
M
0.05
= 2.7 nC (typ.)
0.65
SW
2.9±0.1
A
Low drain-source ON-resistance: R
= 15.6 mΩ (typ.) ( V = 4.5 V)
GS
DS (ON)
0.8±0.05
High forward transfer admittance: |Y | = 25 S (typ.)
fs
S
0.025
Low leakage current: I
= 100 μA (max) (V
= 30 V)
DSS
DS
+0.1
S
0.28
0.17±0.02
-0.11
Enhancement mode: V = 1.3 to 2.3 V (V
= 10 V, I = 1 mA)
D
th
DS
+0.13
-0.12
1.12
1.12
+0.13
-0.12
Absolute Maximum Ratings (Ta = 25°C)
+0.1
-0.11
0.28
Characteristic
Drain-source voltage
Symbol
Rating
Unit
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
V
30
30
±20
8
V
V
V
DSS
V
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
DGR
GS
JEDEC
⎯
⎯
V
GSS
JEITA
DC
(Note 1)
I
D
Drain current
A
TOSHIBA
2-3V1K
Pulsed (Note 1)
I
24
DP
Drain power dissipation
Drain power dissipation
(t = 5 s)
(Note 2a)
Weight: 0.017 g (typ.)
P
1.68
0.84
W
W
D
D
(t = 5 s)
(Note 2b)
P
Circuit Configuration
Single-pulse avalanche energy
(Note 3)
E
42
8
mJ
A
AS
8
7
6
5
Avalanche current
I
AR
Repetitive avalanche energy
E
0.039
mJ
AR
(Tc = 25℃) (Note 4)
T
T
150
°C
°C
Channel temperature
ch
−55 to 150
Storage temperature range
stg
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-01-19
TPCP8A05-H
Thermal Characteristics
Characteristic
Symbol
Max
74.4
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
R
149
°C/W
th (ch-a)
(t = 5 s)
(Note 2b)
Marking (Note 5)
8
7
6
5
8A05H
1
2
3
4
Lot No.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
V
DD
= 24 V, T = 25°C (initial), L = 500 μH, R = 25 Ω, I
= 8 A
ch
G
AR
* Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2010-01-19
TPCP8A05-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±20 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
30
15
1.3
⎯
⎯
13
⎯
⎯
⎯
⎯
⎯
±100
100
⎯
nA
GSS
GS
DS
DS
Drain cutoff current
I
= 30 V, V
= 0 V
μA
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= −20 V
⎯
⎯
V
V
V
V
V
= 10 V, I = 1 mA
⎯
2.3
21.9
17.5
⎯
th
DS
GS
GS
DS
D
= 4.5 V, I = 4 A
15.6
12.5
25
D
Drain-source ON-resistance
R
mΩ
S
DS (ON)
= 10 V, I = 4 A
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 4 A
D
C
C
1300
55
1700
83
iss
V
V
= 10 V, V
= 10 V, V
10 V
= 0 V, f = 1 MHz
pF
Reverse transfer capacitance
Output capacitance
DS
DS
GS
GS
rss
C
330
⎯
oss
Gate resistance
Rise time
rg
= 0 V, f = 5 MHz
⎯
⎯
1.8
3.7
2.7
Ω
t
⎯
r
I
= 4 A
D
V
GS
V
OUT
0 V
Turn-on time
Switching time
t
t
⎯
⎯
⎯
10.8
2.7
19
⎯
⎯
⎯
on
ns
Fall time
t
f
V
≈ 15 V
DD
Turn-off time
off
Duty ≤ 1%, t = 10 μs
w
V
V
≈ 24 V, V
≈ 24 V, V
= 10 V, I = 8 A
⎯
⎯
⎯
⎯
⎯
16
8.3
3.2
2.1
2.7
⎯
⎯
⎯
⎯
⎯
DD
DD
GS
GS
D
Total gate charge
(gate-source plus gate-drain)
Q
g
= 5 V, I = 8 A
D
nC
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Q
gs1
V
≈ 24 V, V
= 10 V, I = 8 A
Q
DD
GS
D
gd
Q
SW
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
I
⎯
⎯
⎯
⎯
⎯
− 0.4
⎯
24
A
V
V
DRP
I
I
= 1 A, V
= 8 A, V
= 0 V
= 0 V
− 0.6
− 1.2
DR
DR
GS
GS
V
DSF
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2010-01-19
TPCP8A05-H
6
5
6
5
8
I
– V
I – V
D DS
4.5
D
DS
4.5
8
10
8
20
16
12
8
10
3.2
3.6
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
10
3.4
3.1
4
3.3
3.3
3.4
3
3.6
3.2
3.1
4
6
2.9
3
4
2.8
2.7
2.9
2
4
2.8
2.7
V
= 2.6 V
GS
V
= 2.6 V
GS
0
0
0
0.2
0.4
0.6
0.8
1
0
0.4
0.8
1.2
1.6
2
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
D
– V
V
– V
GS
GS
DS
16
12
8
0.6
0.4
0.2
0
Common source
Ta = 25°C
Pulse test
Common source
V
= 10 V
DS
Pulse test
Ta = −55°C
100
25
4
I
= 8 A
D
4
2
0
0
2
4
6
8
0
1
2
3
4
5
10
Gate-source voltage
V
(V)
Gate-source voltage
V
(V)
GS
GS
R
− I
D
⎪Y ⎪ − I
fs
DS (ON)
D
100
10
1
100
10
1
Common source
= 10 V
Common source
Ta = 25°C
Pulse test
V
DS
Pulse test
Ta = −55°C
V
=4.5 V
GS
25
100
10 V
0.1
0.1
1
100
0.1
10
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2010-01-19
TPCP8A05-H
R
− Ta
I
− V
DR DS
DS (ON)
25
20
100
10
1
Common source
Pulse test
I
= 2, 4, 8 A
D
10
3
4.5
I
= 2, 4, 8 A
15
10
V
= 4.5 V
D
GS
1
V
= 0 V
GS
V
= 10 V
GS
5
0
Common source
Ta = 25°C
Pulse test
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance − V
V
− Ta
th
DS
10000
1000
100
2.5
2.0
C
iss
1.5
1.0
C
oss
C
rss
Common source
Common source
= 0 V
f = 1 MHz
Ta = 25°C
0.5
0
V
= 10 V
DS
= 1 mA
V
GS
I
D
Pulse test
10
10
100
−80
−40
0
40
80
120
160
0.1
1
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Dynamic input/output
characteristics
P
– Ta
D
2.0
1.6
(1) Device mounted on a glass-epoxy board
(a) (Note 2a)
(1)
30
12
(2) Device mounted on a glass-epoxy board
(b) (Note 2b)
t = 5s
V
DS
V
= 6 V
DD
1.2
0.8
20
10
8
4
12
24
(2)
Common source
= 8 A
Ta = 25°C
I
D
Pulse test
0.4
0
0
0
20
0
40
80
120
160
200
0
4
8
12
16
Ambient temperature Ta (°C)
Total gate charge
Q
g
(nC)
5
2010-01-19
TPCP8A05-H
r
th
– t
w
1000
100
10
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
(1)
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe operating area
100
10
I
max (Pulse) *
D
t =1 ms *
t =10 ms *
1
0.1
*Single-pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
10
0.01
0.1
1
100
Drain-source voltage
V
(V)
DS
6
2010-01-19
TPCP8A05-H
I
– Tch (typ.)
I
– V
DSF
DSS
DR
100
10
1
100000
10000
1000
100
Pulse test
Pulse test
= 0 V
V
= 0 V
GS
V
10
GS
20
V
= 30 V
DS
5
100
75
Ta = 25°C
10
0
0
−0.2
−0.4
−0.6
−0.8
−1
40
80
120
160
Drain-source voltage
V
(V)
Channel temperature Tch (°C)
DSF
Tch – V
DS
160
140
Pulse test
V
= 0 V
GS
120
100
80
60
40
20
0
0
10
20
30
40
Drain-source voltage
V
(V)
DS
7
2010-01-19
TPCP8A05-H
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2010-01-19
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