TPD4142K_技术文档

TPD4142K

TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC

TPD4142K

The TPD4142K is a DC brushless motor driver using

high-voltage PWM control. It is fabricated using a high-voltage

SOI process. The device contains PWM circuit, 3-phase decode

circuit, level shift high-side driver, low-side driver, IGBT outputs,

FRDs, over-current and under-voltage protection circuits, and a

thermal shutdown circuit. It is easy to control a DC brush less

motor by applying a signal from a motor controller and a Hall

amp/ Hall IC to the TPD4142K.

HDIP26-P-1332-2.00

Features

Weight: 3.8 g (typ.)

•

High voltage power side and low voltage signal side terminal

are separated.

•

Bootstrap circuits give simple high-side supply.

Bootstrap diodes are built in.

PWM and 3-phase decode circuit are built in.

Outputs Rotation pulse signals.

3-phase bridge output using IGBTs.

FRDs are built in.

Included over-current and under-voltage protection, and thermal shutdown.

Package: 26-pin DIP.

Compatible with Hall amp input and Hall IC input.

This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure

that the environment is protected against electrostatic discharge.

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TPD4142K

Pin Assignment

Marking

Lot Code.

(Weekly code)

TPD4123K

TPD4142K

Country of origin

Part No. (or abbreviation code)

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2012-02-09

TPD4142K

Block Diagram

V

CC

11

10

17

22

24

BSU

BSV

BSW

Under- Under- Under-

voltage voltage voltage

protect- protect- protect-

V

23

BB

6 V

V

REG

regulator

ion

Under-voltage

protection

Level shift

high-side

driver

2

3

4

5

6

7

HU+

HU-

Hall

3-phase

Amp

Thermal

18

21

25

distribution

logic

HV+

HV-

U

V

shutdown

HW+

HW-

W

Low-side

driver

FR

FG

8

9

IS2

IS1

26

20

PWM

14

13

12

V

S

Over-current

protection

RS

15

Triangular

wave

R

REF

OS

GND

1/16

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2012-02-09

TPD4142K

Pin Description

Pin No.

Symbol

Pin Description

1

GND

HU+

HU-

HV+

HV-

HW+

HW-

FR

Ground pin.

2

U-phase Hall amp signal input pin. (Hall IC can be used.)

V-phase Hall amp signal input pin. (Hall IC can be used.)

W-phase Hall amp signal input pin. (Hall IC can be used.)

Forward/Reverse selection pin.

3

4

5

6

7

8

9

FG

Rotation pulse output pin.

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

V

6 V regulator output pin.

REG

V

Control power supply pin.

CC

OS

PWM triangular wave oscillation frequency setup pin. (Connect a capacitor to this pin.)

PWM triangular wave oscillation frequency setup pin. (Connect a resistor to this pin.)

Speed control signal input pin. (PWM reference voltage input pin.)

Over current detection pin.

R

REF

V

S

RS

GND

BSU

U

Ground pin.

U-phase bootstrap capacitor connecting pin.

U-phase output pin.

NC

IS1

V

Unused pin, which is not connected to the chip internally.

IGBT emitter/FRD anode pin.

V-phase output pin.

BSV

V-phase bootstrap capacitor connecting pin.

High-voltage power supply input pin.

V

BB

BSW

W

W-phase bootstrap capacitor connecting pin.

W-phase output pin.

IS2

IGBT emitter/FRD anode pin.

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TPD4142K

Internal circuit diagrams

Internal circuit diagram of HU+, HU-, HV+, HV-, HW+, HW- input pins

V

CC

To internal circuit

HU+, HU-,

HV+, HV-,

HW+, HW-,

4 kΩ

2 kΩ

19.5 V

Internal circuit diagram of V pin

S

V

CC

To internal circuit

4 kΩ

25 kΩ

V

S

19.5 V

225 kΩ

Internal circuit diagram of FG pin

FG

To internal circuit

250kΩ

Internal circuit diagram of RS pin

V

CC

V_REG

To internal circuit

158kΩ

19.5 V

RS

4 kΩ

10pF

Internal circuit diagram of FR pin

V

CC

V

To internal circuit

REG

200kΩ

4 kΩ

2 kΩ

FR

19.5 V

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2012-02-09

TPD4142K

Timing Chart

HU

HV

Hall amp

input

HW

VU

VV

Output voltage

VW

FG

Rotation pulse

Note: Hall amp input logic high (H) refers to H*+>H*-. (*: U/V/W)

Truth Table

Hall amp Input

U Phase

V Phase

W Phase

FR

HU

FG

High side Low side High side Low side High side Low side

HV

L

HW

H

L

H

L

H

L

ON

OFF

ON

OFF

ON

OFF

ON

OFF

ON

OFF

ON

L

H

L

H

L

OFF

ON

L

ON

OFF

ON

H

L

H

L

ON

OFF

ON

L

OFF

ON

H

L

OFF

ON

OFF

ON

H

L

H

L

H

L

H

L

ON

OFF

ON

L

H

L

OFF

ON

H

L

ON

OFF

L

H

L

ON

OFF

H

L

OFF

ON

L

OFF

L

H

L

Note: Hall amp input logic high (H) refers to H*+>H*-. (*: U/V/W)

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TPD4142K

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

V

500

20

1

V

BB

CC

out

Power supply voltage

V

Output current (DC)

I

A

Output current (pulse)

I

2

A

outp

Input voltage (except V )

V

-0.5 to V

+ 0.5

V

S

IN

REG

Input voltage (only V )

VV

8.2

V

S

V

current

I

50

20

23

mA

V

REG

FG voltage

V

FG

FG current

I

mA

W

°C

Power dissipation (Tc = 25°C)

Operating junction temperature

Junction temperature

Storage temperature

P

C

T

-40 to 135

150

jopr

T

j

T

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

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TPD4142K

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

V

⎯

50

280

15

450

BB

Operating power supply voltage

V

13.5

17.5

CC

V

= 450 V

BB

Duty cycle = 0 %

I

⎯

0.5

10

BB

mA

V

= 15 V

CC

Duty cycle = 0 %

I

2.0

CC

Current dissipation

I

V

= 15 V, high side ON

⎯

50

-2

190

180

―

470

415

―

BS (ON)

BS

μA

I

= 15 V, high side OFF

BS (OFF)

Hall amp input sensitivity

Hall amp input current

VHSENS(HA)

⎯

mV

p-p

IHB(HA)

0

2

μA

Hall amp common input voltage

Hall amp hysteresis width

Hall amp input voltage L→H

Hall amp input voltage H→L

CMV (HA)

IN

0

⎯

8

V

ΔV (HA)

8

30

62

31

-4

IN

mV

V

VLH(HA)

VHL(HA)

4

15

-31

⎯

0

-15

2.1

1.7

0.8

⎯

V

H

V

= 15 V, I = 0.5 A, high side

2.7

2.2

1.2

⎯

CEsat

CC

C

Output saturation voltage

V

L

= 15 V, I = 0.5 A, low side

C

CEsat

V H

I

= 0.5 A, high side

= 0.5 A, low side

= 500 μA

F

FRD forward voltage

BSD forward voltage

PWM ON-duty cycle

V

V L

F

V

F (BSD)

PWMMIN

PWMMAX

⎯

%

⎯

1.7

4.9

2.8

1.1

5

⎯

100

2.5

6.1

3.8

1.5

7

PWM ON-duty cycle, 0 %

PWM ON-duty cycle, 100 %

PWM ON-duty voltage range

Output all-OFF voltage

Regulator voltage

VV 0 %

PWM = 0 %

2.1

5.4

3.3

1.3

6

V

S

VV 100 % PWM = 100 %

S

VV W

VV 100 % − VV 0 %

S

VV OFF

Output all OFF

S

V

= 15 V, I

= 30 mA

REG

CC

REG

Speed control voltage range

FG output saturation voltage

Current control voltage

V

⎯

0

⎯

6.5

0.5

0.54

6.5

185

⎯

V

S

V

= 5 mA

⎯

FGsat

FG

V

0.46

⎯

0.5

4.5

⎯

V

R

Current control delay time

Thermal shutdown temperature

Thermal shutdown hysteresis

Dt

⎯

μs

°C

V

TSD

⎯

135

⎯

ΔTSD

⎯

50

V

under-voltage protection

V

UVD

⎯

10

11

12

CC

BS

CC

under-voltage protection recovery

under-voltage protection

UVR

UVD

UVR

⎯

10.5

9

11.5

10

12.5

11

V

⎯

V

BS

under-voltage protection recovery

⎯

9.5

1.1

3.1

16.5

⎯

10.5

1.3

3.8

20

11.5

1.5

4.6

25

V

Refresh operating ON voltage

Refresh operating OFF voltage

Triangular wave frequency

Output-on delay time

T

Refresh operation ON

Refresh operation OFF

R = 27 kΩ, C = 1000 pF

V

RFON

T

V

RFOFF

f

kHz

μs

ns

c

t

on

t

off

V

= 280 V, V

= 15 V, I = 0.5 A

2.5

1.9

150

3.5

3

BB

CC

C

Output-off delay time

= 15 V, I = 0.5 A

⎯

C

FRD reverse recovery time

t

= 15 V, I = 0.5 A

⎯

rr

C

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2012-02-09

TPD4142K

Application Circuit Example

15 V

V

CC

BSU

11

10

17

22

24

BSV

C

5

BSW

Under- Under- Under-

voltage voltage voltage

protect- protect- protect-

23

V

BB

REG

6 V

regulator

ion

C

6

Under-voltage

protection

R

3

R

C

1

C

2

C

3

Level shift

high-side

driver

HU+

2

3

4

5

C

Hall

3-phase

HV+

Amp

Thermal

18

21

25

distribution

logic

U

C

shutdown

M

V

HW+

6

7

R

W

C

Low-side

driver

FR

FG

8

9

Rotation

pulse

IS2

26

20

R

PWM

V

IS1

RS

S

14

Speed

R

C

Over-current

protection

instruction

15

Triangular

wave

13

12

R

1

R

REF

1/16

OS

4

GND

C

R

2

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TPD4142K

External Parts

Typical external parts are shown in the following table.

Part

Typical

Purpose

Remarks

C , C , C

25 V/2.2 μF

0.62 Ω ± 1 % (1 W)

25 V/1000 pF ± 5 %

27 kΩ ± 5 %

Bootstrap capacitor

(Note 1)

(Note 2)

(Note 3)

(Note 4)

(Note 5)

1

2

1

4

2

5

6

3

R

C

R

C

R

Current detection

PWM frequency setup

Control power supply stability

25 V/10 μF

25 V/0.1 μF

V

power supply stability

REG

5.1 kΩ

FG pin pull-up resistor

Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. Although the IC

can operate at above the V_BSundervoltage level, it is however recommended that the capacitor voltage be

greater than or equal to 13.5 V to keep the power dissipation small. The capacitor is biased by V_CCand

must be sufficiently derated accordingly.

Note 2: The following formula shows the detection current: I_O= V_R÷ R₁(V = 0.5 V typ.)

R

Do not exceed a detection current of 1 A when using the IC.

Note 3: With the combination of C₄and R₂shown in the table, the PWM frequency is around 20 kHz. The IC

intrinsic error factor is around 10 %.

The PWM frequency is broadly expressed by the following formula. (In this case, the stray capacitance of

the printed circuit board needs to be considered.)

f_c= 0.65 ÷ { C₄× (R₂+ 4.25 kΩ)} [Hz]

R₂creates the reference current of the PWM triangular wave charge/discharge circuit. If R₂is set too small

it exceeds the current capacity of the IC internal circuits and the triangular wave distorts. Set R₂to at least 9

kΩ.

Note 4: When using the IC, adjustment is required in accordance with the use environment. When mounting, place

as close to the base of the IC leads as possible to improve noise elimination.

Note 5: The FG pin is open drain. If the FG pin is not used, connect to the GND.

Note 6: If noise is detected on the Input signal pin, add a capacitor between inputs.

Note 7: A Hall device should use an indium antimony system. It recommend that the peak Hall device voltage

should set more than 300mV.

Handling precautions

(1) When switching the power supply to the circuit on/off, ensure that V_S< VV_SOFF (all IGBT outputs

off). At that time, either the V_CCor the V_BBcan be turned on/off first. Note that if the power supply is

switched off as described above, the IC may be destroyed if the current regeneration route to the V_BB

power supply is blocked when the V_BBline is disconnected by a relay or similar while the motor is

still running.

(2) The IC has a forward/reverse rotation control pin (FR). To change the rotation direction, switch the FR

pin after the motor is stopped in the state that the V_Svoltage is lower than or equal to 1.1 V. When

the FR pin is switched while the motor is rotating, the following malfunctions may occur.

A shoot-through current may flow between the upper arm and lower arm in the output stage (IGBT)

at that moment when the motor is switched.

An over current may flow into the area where the over current protection circuit cannot detect it.

(3) The triangular wave oscillator circuit, with externally connected C₄and R₂, charges and discharges

minute amounts of current. Therefore, subjecting the IC to noise when mounting it on the board may

distort the triangular wave or cause malfunction. To avoid this, attach external parts to the base of

the IC leads or isolate them from any tracks or wiring which carries large current.

(4) The PWM of this IC is controlled by the on/off state of the high-side IGBT.

(5) If a motor is locked where V_BBvoltage is low and duty is 100 %, it may not be possible to reboot after

the load is released as a result of the high side being ON immediately prior to the motor being locked.

This is because, over time, the bootstrap voltage falls, the high-side voltage decrease protection

operates and the high-side output becomes OFF. In this case, since the level shift pulse necessary to

turn the high side ON cannot be generated, reboot is not possible. A level shift pulse is generated by

either the edge of a Hall sensor output or the edge of an internal PWM signal, but neither edge is

10

2012-02-09

TPD4142K

available due to the motor lock and duty 100 % command. In order to reboot after a lock, the high-side

power voltage must return to a level 0.5 V (typ.) higher than the voltage decrease protection level, and

a high-side input signal must be introduced. As a high-side input signal is created by the

aforementioned level shift pulse, it is possible to reboot by reducing PWM duty to less than 100 % or

by forcing the motor to turn externally and creating an edge at a Hall sensor output. In order to

ensure reboot after a system lock, the motor specification must be such that maximum duty is less

than 100 %.

Description of Protection Function

(1) Over-current protection

The IC incorporates an over-current protection circuit to protect itself against over current at startup

or when a motor is locked. This protection function detects voltage generated in the current-detection

resistor connected to the RS pin. When this voltage exceeds V_R(= 0.5 V typ.), the high-side IGBT

output, which is on, temporarily shuts down after a delay time, preventing any additional current

from flowing to the IC. The next PWM ON signal releases the shutdown state.

Duty ON

PWM reference voltage

Duty OFF

Triangle wave

Delay time

t

off

t

on

Over-current setting value

Output current

Retry

Over-current shutdown

(2) Under-voltage protection

The IC incorporates under-voltage protection circuits to prevent the IGBT from operating in

unsaturated mode when the V_CCvoltage or the V_BSvoltage drops.

When the V_CCpower supply falls to the IC internal setting V_CCUVD (= 11 V typ.), all IGBT outputs

shut down regardless of the input. This protection function has hysteresis. When the V_CCpower

supply reaches 0.5 V higher than the shutdown voltage (V_CCUVR (= 11.5 V typ.)), the IC is

automatically restored and the IGBT is turned on/off again by the input.

When the V_BSsupply voltage drops V_BSUVD (= 10 V typ.), the high-side IGBT output shuts down.

When the V_BSsupply voltage reaches 0.5 V higher than the shutdown voltage (V_BSUVR (= 10.5 V

typ.)), the IGBT is turned on/off again by the input signal.

(3) Thermal shutdown

The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.

When the temperature of this chip rises to the internal setting TSD due to external causes or internal

heat generation, all IGBT outputs shut down regardless of the input. This protection function has

hysteresis ΔTSD (= 50 °C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is

automatically restored and the IGBT is turned on/off again by the input.

Because the chip contains just one temperature-detection location, when the chip heats up due to the

IGBT for example, the distance between the detection location and the IGBT (the source of the heat)

can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip

may rise higher than the initial thermal shutdown temperature.

11

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TPD4142K

Description of Bootstrap Capacitor Charging and Its Capacitance

The IC uses bootstrapping for the power supply for high-side drivers.

The bootstrap capacitor is charged by turning on the low-side IGBT of the same arm (approximately 1/5 of PWM

cycle) while the high-side IGBT controlled by PWM is off. (For example, to drive at 20 kHz, it takes approximately

10 μs per cycle to charge the capacitor.) When the V_Svoltage exceeds 3.8 V (55 % duty), the low-side IGBT is

continuously in the off state. This is because when the PWM on-duty becomes larger, the arm is short-circuited

while the low-side IGBT is on. Even in this state, because PWM control is being performed on the high-side IGBT,

the regenerative current of the diode flows to the low-side FRD of the same arm, and the bootstrap capacitor is

charged. Note that when the on-duty is 100 %, diode regenerative current does not flow; thus, the bootstrap

capacitor is not charged.

When driving a motor at 100 % duty cycle, take the voltage drop at 100 % duty (see the figure below) into

consideration to determine the capacitance of the bootstrap capacitor.

Capacitance of the bootstrap capacitor = Current dissipation (max) of the high-side driver × Maximum drive time

/(V_CC− V_F

+ V_F

− 13.5) [F]

(FRD)

(BSD)

V_F

: Bootstrap diode forward voltage

: First recovery diode forward voltage

(BSD)

(FRD)

Consideration must be made for aging and temperature change of the capacitor.

Duty cycle 100 % (V : 5.4 V)

S

Duty cycle 80 %

C

Triangular wave

Duty cycle 55 % (V : 3.8 V)

S

PWM reference voltage

B

A

Duty cycle 0 % (V : 2.1 V)

S

VVsOFF (V : 1.3 V)

S

Low-side ON

High-side duty ON

IGBT Operation

GND

V

Range

S

A

B

C

Both high and low-side OFF.

Charging range. Low-side IGBT refreshing on the phase the high-side IGBT in PWM.

No charging range. High-side at PWM according to the timing chart. Low-side no refreshing.

Safe Operating Area

1.0

0

450

Power supply voltage

V

(V)

BB

Figure 1 SOA at Tj = 135°C

Note: The above safe operating areas are at Tj = 135 °C (Figure 1).

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2012-02-09

TPD4142K

V

H – T

V

L – T

CEsat j

CEsat

j

3.4

3.0

2.6

2.2

1.8

1.4

3.4

3.0

2.6

2.2

1.8

1.4

V

= 15 V

V

= 15 V

CC

I

= 700 mA

= 500 mA

= 300 mA

C

I

= 700 mA

C

I

C

I

= 500 mA

= 300 mA

C

I

−50

0

50

100

150

18

−50

0

50

100

150

18

Junction temperature

T

(°C)

Junction temperature

T

(°C)

j

V H – T

F

V L – T

F

j

2.4

2.2

2.0

1.8

1.6

1.4

2.4

2.2

2.0

I

= 700 mA

= 500 mA

F

I

= 700 mA

F

I

F

I

= 500 mA

= 300 mA

F

1.8

1.6

1.4

1.2

I

= 300 mA

F

1.2

−50

0

50

100

0

50

100

Junction temperature

T

(°C)

Junction temperature

T

(°C)

j

I

– V

V

– V

REG CC

CC

4.0

3.0

7.0

6.5

6.0

5.5

5.0

T =−40°C

j

T =−40°C

j

T =25°C

j

T =135°C

j

T =25°C

j

I

= 30 mA

REG

T =135°C

j

2.0

1.0

12

14

16

12

14

16

Control power supply voltage

V

(V)

Control power supply voltage

V

(V)

CC

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2012-02-09

TPD4142K

t

– T

t

off

– T

on

j

3.0

2.0

1.0

0

3.0

2.0

1.0

0

V

= 280 V

= 15 V

V

= 280 V

= 15 V

BB

CC

BB

CC

I

= 0.5 A

I

= 0.5 A

C

High-side

Low-side

High-side

Low-side

−50

0

50

100

150

−50

0

50

100

150

Junction temperature

T

(°C)

Junction temperature

T

(°C)

j

V

– T

V

UV – T

CC j

S

j

12.5

12.0

11.5

11.0

10.5

10.0

6.0

V

UVD

UVR

CC

VV 100%

S

4.0

2.0

0

VV

W

S

VV 0%

S

V

= 15 V

CC

−50

0

50

100

150

−50

0

50

100

150

Junction temperature

T

(°C)

Junction temperature

(°C)

j

V

UV – T

V – T

R j

BS

j

11.5

11.0

10.5

10.0

9.5

1.0

0.8

0.6

0.4

0.2

0

V = 15 V

CC

V

UVD

UVR

BS

9.0

−50

0

50

100

150

−50

0

50

100

150

Junction temperature

T

(°C)

Junction temperature

(°C)

j

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2012-02-09

TPD4142K

I

– V

I

– V

BS (OFF) BS

BS (ON)

BS

450

350

250

150

50

450

350

250

150

50

T =−40°C

j

T =−40°C

j

T =25°C

j

T =25°C

j

T =135°C

j

T =135°C

j

12

14

16

18

12

14

16

18

Control power supply voltage

V

(V)

Control power supply voltage

V

(V)

BS

V

– T

j

Wt – T

on

F (BSD)

j

125

100

75

50

25

0

1.0

0.9

I

= 700 mA

= 500 mA

C

I

= 700 μA

F

0.8

0.7

0.6

0.5

C

I

= 500 μA

F

I

= 300 mA

C

I

= 300 μA

F

−50

0

50

100

150

−50

0

50

100

150

Junction temperature

T

(°C)

Junction temperature

T

(°C)

j

DV (HA)– T

IN

j

Wt – T

off

j

60

50

40

30

20

10

50

40

30

20

10

0

I

= 700 mA

C

I

= 500 mA

= 300 mA

C

−50

0

50

100

150

−50

0

50

100

150

Junction temperature

T

(°C)

Junction temperature

T

(°C)

j

15

2012-02-09

TPD4142K

Test Circuits

IGBT Saturation Voltage (U-phase low side)

0.5 A

VM

2.5 V

HU+ = 0 V

HV+ = 5 V

HW+ = 0 V

V

_CC= 15 V

27

kΩ

1000 pF

V_S= 6.1 V

FRD Forward Voltage (U-phase low side)

0.5 A

VM

16

2012-02-09

TPD4142K

V

CC

Current Dissipation

IM

V_CC= 15 V

27

kΩ

1000 pF

Regulator Voltage

30

mA

VM

V

_CC= 15 V

27

kΩ

1000 pF

17

2012-02-09

TPD4142K

Output ON/OFF Delay Time (U-phase low side)

IM

2.2 μF

U = 280 V

560 Ω

2.5 V

HU+ = 0 V

HV+ = PG

HW+ = 0 V

V_CC= 15 V

V_S= 6.1 V

27

kΩ

1000 pF

90 %

10 %

Input (HV+)

90 %

10 %

IM

t

off

on

18

2012-02-09

TPD4142K

PWM ON-duty Setup Voltage (U-phase high side)

2 kΩ

V_BB= 18 V

15 V

2.5 V

HU+ = 5 V

HV+ = 0 V

HW+ = 0 V

V_CC= 15 V

VM

27

kΩ

1000 pF

V_S= 6.1 V → 0 V

0 V → 6.1 V

Note: Sweeps the V_Spin voltage and monitors the U pin.

When output is turned off from on, the PWM = 0 %. When output is full on, the PWM = 100 %.

19

2012-02-09

TPD4142K

V

CC

Under voltage Protection Operating/Recovery Voltage (U-phase low side)

U = 18 V

2 kΩ

2.5 V

HU+ = 0 V

HV+ = 5 V

HW+ = 0 V

V_CC= 15 V → 6 V

VM

1000 pF

6 V → 15 V

27

kΩ

V_S= 6.1 V

Note: Sweeps the V_CCpin voltage from 15 V and monitors the U pin voltage.

The V_CCpin voltage when output is off defines the under-voltage protection operating voltage.

Also sweeps from 6 V to increase. The V_CCpin voltage when output is on defines the under voltage

protection recovery voltage.

V

BS

Under-voltage Protection Operating/Recovery Voltage (U-phase high side)

VM

V_BB= 18 V

BSU = 15 V → 6 V

6 V → 15 V

2 kΩ

2.5 V

HU+ = 5 V

HV+ = 0 V

HW+ = 0 V

V_CC= 15 V

V_S= 6.1 V

27

kΩ

1000 pF

Note: Sweeps the BSU pin voltage from 15 V to decrease and monitors the V

pin voltage. The BSU pin

BB

voltage when output is off defines the under voltage protection operating voltage. Also sweeps the

BSU pin voltage from 6V to increase and change the HU pin voltage at 5V → 0V→ 5V each time. It

repeats similarly output is on. The BSU pin voltage when output is on defines the under voltage

protection recovery voltage.

20

2012-02-09

TPD4142K

Current Control Operating Voltage (U-phase high side)

IS/RS = 0 V → 0.6 V

2 kΩ

V_BB= 18 V

15 V

2.5 V

HU+ = 5 V

HV+ = 0 V

HW+ = 0 V

V_CC= 15 V

V_S= 6.1 V

VM

27

kΩ

1000 pF

Note: Sweeps the IS/RS pin voltage and monitors the U pin voltage.

The IS/RS pin voltage when output is off defines the current control operating voltage.

V

BS

Current Dissipation (U-phase high side)

IM

BSU = 15 V

2.5 V

HU+ = 5 V/0 V

HV+ = 0 V

HW+ = 0 V

V_CC= 15 V

V_S= 6.1 V

27

kΩ

1000 pF

21

2012-02-09

TPD4142K

BSD Forward Voltage (U-phase)

500 μA

VM

22

2012-02-09

TPD4142K

Turn-ON/OFF Loss (low side IGBT + high side FRD)

V_BB/U = 280 V

IM

5 mH

L

VM

2.2 μF

2.5 V

HU+ = 0 V

HV+ = PG

HW+ = 0 V

V_CC= 15 V

V_S= 6.1 V

27

kΩ

1000 pF

Input (HV+)

IGBT (C-E voltage)

(U-GND)

Power supply current

W

ton

toff

23

2012-02-09

TPD4142K

Package Dimensions

HDIP26-P-1332-2.00

Unit: mm

Weight: 3.8 g (typ.)

24

2012-02-09

TPD4142K

RESTRICTIONS ON PRODUCT USE

•

Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

•

Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling

equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric

power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

document.

•

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY

WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

•

Do not use or otherwise make available Product or related software or technology for any military purposes, including without

limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile

technology products (mass destruction weapons). Product and related software and technology may be controlled under the

Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product

or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

25

2012-02-09


型号：	TPD4142K
厂家：	TOSHIBA
描述：	TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC 东芝智能功率器件高压硅单片电源IC 高压
文件：	总25页 (文件大小：387K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TPD4142K [TOSHIBA]

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