TPM2626-60 [TOSHIBA]
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power;
| 型号： | TPM2626-60 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总4页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TPM2626-60
FEATURES
HIGH POWER
PARTIALLY MATCHED TYPE
P1dB=48.0dBm at 2.6GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=10.0dB at 2.6GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 47.0 48.0
⎯
VDS= 12V
f = 2.6GHz
Power Gain at 1dB Gain
Compression Point
G1dB
dB
9.0
10.0
⎯
IDSset≅8.0A
Drain Current
IDS1
ηadd
ΔTch
A
12.0 15.0
⎯
⎯
⎯
Power Added Efficiency
Channel Temperature Rise
%
39
⎯
C
°
100
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
⎯
Recommended gate resistance (Rg) : Rg = 30 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
IDS= 12.0A
VGSoff VDS= 3V
IDS= 300mA
VDS= 3V
VGS= 0V
UNIT MIN. TYP. MAX.
Transconductance
gm
S
V
A
V
20.0
-1.8
38
⎯
-1.0
⎯
⎯
-3.0
⎯
Pinch-off Voltage
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
VGSO IGS= -10.0mA
-5
⎯
⎯
C/W
°
Thermal Resistance
Rth(c-c) Channel to Case
0.6
0.8
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2007
TPM2626-60
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
Gate-Source Voltage
Drain Current
V
-5
A
26.0
Total Power Dissipation (Tc= 25 C )
PT
W
187.5
175
°
C
°
Channel Temperature
Storage
Tch
C
°
Tstg
-65 ∼ +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TPM2626-60
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=12V
IDS≅12.0A
Pin=38.0dBm
48
47
46
45
44
2.4
2.5
2.6
2.7
2.8
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=2.6GHz
50
48
46
44
42
40
38
36
34
VDS=12V
IDS≅12A
70
60
50
40
30
20
10
0
24
28
32
36
40
44
Pin(dBm)
3
TPM2626-60
Power Dissipation(PT) vs. Case Temperature(Tc)
200
150
100
50
0
200
0
40
80
120
160
Tc( C )
°
DRAWING OF RECOMMENDABLE MATCHING NETWORK
4
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