U20GL2C48A [TOSHIBA]
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE; 东芝高效率二极管堆栈（ HED ）硅外延式
| 型号： | U20GL2C48A |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U20GL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
U20GL2C48A
Unit: mm
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
l Repetitive Peak Reverse Voltage
l Average Output Rectified Current
: V
O
= 400V
: I = 20A
RRM
l Ultra Fast Reverse−Recovery Time : t = 35ns (Max)
rr
l Low Switching Losses and Output Noise.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
Average Output Rectified Current
V
400
V
A
RRM
I
20
O
100 (50Hz)
110 (60Hz)
−40~150
−40~150
Peak One Cycle Surge Forward
Current (Sin Wave)
I
A
FSM
JEDEC
JEITA
TOSHIBA
―
―
Junction Temperature
T
j
°C
°C
12−10D2A
Storage Temperature Range
T
stg
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
V
I
= 10A
FM
―
―
―
―
―
―
―
―
―
―
1.8
50
V
µA
FM
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
I
V
= 400V
RRM
RRM
t
I
I
= 2A, di / dt = −50A / µs
35
ns
rr
F
F
t
= 1A
100
1.6
ns
fr
R
DC Total, Junction to Case
°C / W
th (j−c)
Note: V , I
, t , t ········ A value of one cell.
FM RRM rr fr
POLARITY
MARKING
* 1
* 2
MARK
20GL2C
A
* 3
1
2001-07-11
U20GL2C48A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
2
2001-07-11
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