TC1501P1620 [TRANSCOM]
RF Power Field-Effect Transistor;
| 型号： | TC1501P1620 |
| 厂家： | 
TRANSCOM, INC. |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总5页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC1501
REV5_20070502
1W High Linearity and High Efficiency GaAs Power FETs
FEATURES
ꢀ1W Typical Power at 6 GHz
PHOTO ENLARGEMENT
ꢀLinear Power Gain: GL = 13 dB Typical at 6 GHz
ꢀHigh Linearity: IP3 = 40 dBm Typical at 6 GHz
ꢀHigh Power Added Efficiency: Nominal PAE of 43% at 6 GHz
ꢀVia Hole Source Ground
ꢀSuitable for High Reliability Application
ꢀBreakdown Voltage: BVDGO ≥ 15 V
ꢀLg = 0.35 µm, Wg = 2.4 mm
ꢀTight Vp ranges control
ꢀHigh RF input power handling capability
ꢀ100 % DC Tested
DESCRIPTION
The TC1501 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and
high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low
thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20GHz.
All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical application include commercial and military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
MIN
29.5
12
TYP MAX UNIT
Symbol
Conditions
30
13
dBm
dB
P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 240 mA
GL
Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 240 mA
Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 240 mA,*PSCL = 17 dBm
40
dBm
%
IP3
43
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
600
400
-1.7**
18
mA
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
mS
gm
VP
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA
Volts
Volts
°C/W
15
BVDGO Drain-Gate Breakdown Voltage at IDGO =1.2 mA
12
Rth
Thermal Resistance
Note:
* PSCL: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1501’s are divided into 3 groups:
(1)TC1501P1519 : Vp = -1.5V to -1.9V (2) TC1501P1620 : Vp = -1.6V to -2.0V
(3)TC1501P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
1 / 5
Fax: 886-6-5051602
TC1501
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
VGS
IDS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12 V
-5 V
IDSS
Pin
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
28 dBm
3.8 W
PT
TCH
TSTG
175 °C
- 65 °C to +175 °C
CHIP DIMENSIONS
±
600 12
D
D
Units: Micrometers
Chip Thickness: 50
Gate Pad: 79 x 59.5
Drain Pad: 86.0 x 76.0
±
470 12
G
G
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
2 / 5
Fax: 886-6-5051602
TC1501
REV5_20070502
TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 240 mA
Swp Max
Mag Max
18GHz
Swp Max
18 GHz
0.04
120
60
S11
30
150
0
-180
-30
S12
-150
-60
Swp Min
2GHz
-120
0.01
Per Div
Swp Min
2 GHz
Mag Max
6
Swp Max
18 GHz
105
Swp Max
18GHz
75
120
60
30
S22
150
165
15
0
-180
-15
-30
5
6
-1
S21
0
5
-1
-60
0
2
-75
5
0
-1
2
Swp Min
2 GHz
-1
Swp Min
2GHz
Per Div
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
3 / 5
Fax: 886-6-5051602
TC1501
REV5_20070502
FREQUENCY
S11
S21
S12
S22
(GHz)
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
3
4
5
6
7
8
9
10
11
MAG
0.99891
0.99603
0.98604
0.97335
0.96085
0.94996
0.94105
0.93396
0.92837
0.92397
0.92048
0.91769
0.91545
0.91363
0.91214
0.91091
0.90989
0.90904
0.90833
0.90774
0.90723
0.9040
0.9041
0.9051
0.9065
0.9081
0.9098
0.9115
0.9131
0.9147
0.9161
0.9175
0.9188
0.9199
0.9210
0.9220
0.9229
ANG
MAG
22.18
ANG
173.81
167.74
156.38
146.45
138.1
131.16
125.41
120.6
116.54
113.06
110.04
107.39
105.04
102.92
101
99.24
97.618
96.111
94.702
93.377
92.124
81.52
73.64
66.87
60.79
55.24
50.12
45.38
40.99
36.92
33.15
29.65
26.40
23.40
20.62
18.05
15.67
MAG
ANG
84.101
78.333
67.567
58.24
50.477
44.136
38.98
34.77
31.305
28.425
26.007
23.955
22.199
20.683
19.364
18.208
17.19
16.288
15.485
14.767
14.123
10.50
9.26
MAG
0.20605
0.20936
0.22045
0.23376
0.24626
0.25683
0.26545
0.27249
0.27834
0.28333
0.28771
0.29169
0.29539
0.29891
0.30232
0.30567
0.30901
0.31234
0.3157
0.3191
0.32254
0.3571
0.3983
0.4415
0.4843
0.5254
0.5638
0.5993
0.6315
0.6606
0.6868
0.7103
0.7314
0.7502
0.7670
0.7821
0.7956
ANG
-11.249
-22.286
-43.003
-61.165
-76.492
-89.181
-99.625
-108.24
-115.4
-121.41
-126.49
-130.84
-134.59
-137.85
-140.71
-143.24
-145.49
-147.5
-149.32
-150.96
-152.45
-162.30
-167.64
-171.11
-173.66
-175.67
-177.35
-178.82
179.85
178.64
177.50
176.42
175.40
174.41
173.45
172.52
171.61
0.0038131
0.0075079
0.014168
0.019538
0.023616
0.026624
0.028825
0.030443
0.031646
0.03255
0.033239
0.03377
0.034182
0.034505
0.034758
0.034957
0.035113
0.035234
0.035326
0.035395
0.035444
0.0353
0.0346
0.0337
0.0327
0.0318
0.0310
0.0303
0.0300
0.0299
0.0302
0.0308
0.0317
0.0328
0.0342
0.0358
0.0376
-13.841
-27.208
-51.153
-70.488
-85.489
-96.998
-105.86
-112.74
-118.14
-122.42
-125.84
-128.61
-130.85
-132.68
-134.18
-135.42
-136.44
-137.28
-137.97
-138.54
-139.01
-140.96
-141.11
-141.38
-142.05
-143.09
-144.38
-145.82
-147.36
-148.92
-150.48
-152.01
-153.49
-154.92
-156.30
-157.61
-158.87
21.835
20.603
18.944
17.175
15.492
13.98
12.658
11.516
10.532
9.6827
8.9461
8.3038
7.7405
7.2435
6.8025
6.4089
6.0558
5.7375
5.4492
5.187
3.4748
2.5798
2.0300
1.6573
1.3879
1.1843
1.0254
0.8983
0.7947
0.7090
0.6371
0.5762
0.5241
0.4791
0.4400
0.4058
9.37
10.45
12.36
14.98
18.21
21.90
25.91
30.04
34.13
38.03
41.66
44.95
47.87
50.43
12
13
14
15
16
17
18
* The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
4 / 5
Fax: 886-6-5051602
TC1501
REV5_20070502
SMALL SIGNAL MODEL, VDS = 8 V, IDS = 240 mA
SCHEMATI
PARAMETERS
0.039 nH
0.45 Ohm
4.435 pF
0.91 Ohm
0.181 pF
440.3 mS
3.9 psec
0.394 Ohm
0.01 nH
Lg
Rg
Cgs
Ri
Rs
Ls
Lg
Cgd
Ld
Rd
Rg
Cgs
Ri
Gm
Cds
0.536 pF
63.7 Ohm
0.63 Ohm
0.008 nH
Cds
Rds
Rd
Ld
Rds
T
Cgd
Gm
T
Rs
Ls
LARGE SIGNAL MODEL, VDS = 8 V, IDS = 240 mA
SCHEMATI
TOM2 MODEL PARAMETERS
-1.768
2.81
0.549
0.0173
0.0818
0.96
V
0.5
0.1805 pF
7.22 pF
0.5364 pF
0.908 Ohm
0.0001 Ohm
V
VTO
ALPHA
BETA
GAMMA
DELTA
Q
VMAX
CGD
CGS
CDS
RIS
RID
Lg
Rg
Cgd
Ld
Rd
Rid
Id
0.1
0.01
15
V
NG
ND
TAU
RG
RD
RS
IS
N
VBI
VBR
RDB
CBS
TNOM
LS
LG
LD
AFAC
NFING
46.517 Ohm
9.6833 pF
Cgs
Ris
3.9 ps
0.454 Ohm
0.63 Ohm
0.394 Ohm
1E-11 mA
1
Rdb
25
°C
Cds
0.0101 nH
0.0391 nH
0.008 nH
Cbs
1
1
1
0.2
V
V
Rs
Ls
VDELTA
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
5 / 5
Fax: 886-6-5051602
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