QPD1025EVB1 [TRIQUINT]
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor;
| 型号： | QPD1025EVB1 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor |
| 文件： | 总18页 (文件大小：1435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1025 is a 1500 W (P3dB) discrete GaN on SiC
HEMT which operates from 1.0 to 1.1 GHz. Input pre-match
within the package results in ease of external board match
and saves board space. The device is in an industry standard
air cavity package and is ideally suited for IFF, avionics and
test instrumentation. The device can support both CW and
pulsed operations.
Lead-free and ROHS compliant
4-lead NI-1230 Package (Earless)
Evaluation boards are available upon request.
Key Features
• Frequency: 1.0 to 1.1 GHz
• Output Power (P3dB)1: 1660 W
• Linear Gain1: 22.9 dB
Functional Block Diagram
• Typical PAE3dB1: 78.5%
• Operating Voltage: 65 V
• CW and Pulse capable
Note 1: @ 1.0 GHz Load Pull
Applications
• IFF Transponders
• Avionics
Ordering info
Part No.
ECCN Description
QPD1025
EAR99 1.0 – 1.1 GHz Transistor
QPD1025S2
QPD1025EVB1
EAR99 2 Piece Sample Bag
EAR99 1.0 – 1.1 GHz Evaluation Board
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 1 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Absolute Maximum Ratings 1, 2, 3
Recommended Operating Conditions 1, 2, 3, 4
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
−40 +25 +85
ꢁ°C
V
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, IDMAX
225
-7 to +2
142
V
V
–
+65 +70
1.5
A
A
4
Drain Current, ID
–
–
–
–
–
28
−2.8
–
–
A
Gate Current Range, IG
Power Dissipation, Pulsed,
See pg. 12
mA
3
Gate Voltage, VG
–
V
758
W
2
Channel Temperature (TCH)
Power Dissipation (PD) 2,4
Power Dissipation (PD), CW 2
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions
2. Package base at 85 °C
250
685
496
°C
W
W
PDISS
3
–
RF Input Power, Pulsed, PIN
Channel Temperature, TCH
46.2
275
dBm
°C
–
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
°C
Storage Temperature
Notes:
−65 to +150
3. To be adjusted to desired IDQ
4. Pulsed, 1000us PW, 20% DC
1. Operation of this device outside the parameter ranges
given above may cause permanent damage
2. Pulsed, 1000us PW, 20% DC, Package base at 85 °C
3. Pulsed, 100us PW, 10% DC, T = 25 °C
Measured Load Pull Performance – Power Tuned 1, 2
Parameter
Typical Values
Units
GHz
dBm
Frequency, F
1.0
1.1
Output Power at 3dB compression, P3dB
59.2
59.0
Power Added Efficiency at 3dB compression,
PAE3dB
Gain at 3dB compression, G3dB
Notes:
70.2
19.5
75.5
19.2
%
dB
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)
2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.
Measured Load Pull Performance – Efficiency Tuned 1, 2
Parameter
Typical Values
Units
GHz
dBm
Frequency, F
1.0
1.1
Output Power at 3dB compression, P3dB
57.7
58.3
Power Added Efficiency at 3dB compression,
PAE3dB
Gain at 3dB compression, G3dB
Notes:
78.5
19.9
76.9
19.6
%
dB
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)
2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 2 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
RF Characterization – 1.0 – 1.1 GHz EVB Performance at 1.05 GHz 1
Parameter
Linear Gain, GLIN
Min
–
Typ
21.2
Max
–
–
Units
ꢁdB
Output Power at 3dB compression point, P3dB
–
1461
W
Drain Efficiency at 3dB compression point,
DEFF3dB
Gain at 3dB compression point, G3dB
–
–
73.2
18.2
–
–
%
dB
Notes:
1. VD = 65ꢁV, IDQ = 1.5ꢁA (combined), Temp = +25ꢁ°C, Pulse Width = 100 us, Duty Cycle = 10%
RF Characterization – Mismatch Ruggedness at 1.0 GHz 1, 2, 3
Symbol Parameter
dB Compression
Typical
VSWR
Impedance Mismatch Ruggedness
3
ꢁ10:1
Notes:
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 1.5 A (combined)
2. Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector
3. Pulse: 100us, 10% Duty cycle
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 3 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts 1, 2, 3
Notes:
1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2. The performance shown below is for only half of the device out of the two independent amplification paths.
3. See page 13 for load pull reference planes where the performance was measured.
1.0GHz, Load-pull
Zs(fo) = 0.72-1.76i
Zs(2fo) = 0.47+0.06i
Zs(3fo) = 0.81+0.5i
Zl(2fo) = 0.79+0.69i
Zl(3fo) = NaN
• Max Power is 59.2dBm
at Z = 2.31+0.392i
= -0.1238+0.0829i
• Max Gain is 20.3dB
at Z = 1.718+2.043i
= -0.0709+0.4636i
• Max PAE is 78.5%
at Z = 2.863+2.045i
19.9
= 0.0876+0.3182i
77.4
57.7
57.9
58.1
58.3
58.5
58.7
75.4
73.4
71.4
69.4
58.9
Power
Gain
59.1
PAE
Zo = 3
3dB Compression Referenced to Peak Gain
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 4 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts 1, 2, 3
Notes:
1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2. The performance shown below is for only half of the device out of the two independent amplification paths.
3. See page 13 for load pull reference planes where the performance was measured.
1.1GHz, Load-pull
Zs(fo) = 0.94-2.29i
• Max Power is 59dBm
Zs(2fo) = 0.47-0.06i
Zs(3fo) = 0.52+0.8i
Zl(2fo) = 0.8+0.69i
Zl(3fo) = NaN
at Z = 2.53+0.746i
= -0.0655+0.1438i
• Max Gain is 20.4dB
at Z = 1.111+1.709i
= -0.2444+0.5171i
• Max PAE is 76.9%
at Z = 2.221+1.322i
= -0.08+0.2735i
20.1
19.6
19.1
18.6
18.1
73.9
71.9
17.6
75.9
69.9
67.9
65.9
63.9
57.5
57.7
57.9
58.1
58.3
58.5
58.7
58.9
Power
Gain
PAE
Zo = 3
3dB Compression Referenced to Peak Gain
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 5 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Typical Measured Performance – Load-Pull Drive-up 1, 2, 3
Notes:
1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2. The performance shown below is for only half of the device out of the two independent amplification paths.
3. See page 13 for load pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
1.0 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
1.0 GHz - Power Tuned
25
24
23
22
21
20
19
18
17
16
15
100
90
80
70
60
50
40
30
20
10
0
25
24
23
22
21
20
19
18
17
16
15
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 0.72-1.76i
Zs-2fo = 0.47+0.06i
Zs-3fo = 0.81+0.5i
Zl-fo = 2.31+0.392i
Zl-2fo = 0.79+0.69i
Zl-3fo = NaN
Zs-fo = 0.72-1.76i
Zs-2fo = 0.47+0.06i
Zs-3fo = 0.81+0.5i
Zl-fo = 2.863+2.045i
Zl-2fo = 0.79+0.69i
Zl-3fo = NaN
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
Gain and PAE vs. Output Power
1.1 GHz - Power Tuned
Gain and PAE vs. Output Power
1.1 GHz - Efficiency Tuned
25
100
25
100
Gain
PAE
Gain
PAE
24
23
22
21
20
19
18
17
16
15
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
90
80
70
60
50
40
30
20
10
0
Zs-fo = 0.94-2.29i
Zs-2fo = 0.47-0.06i
Zs-3fo = 0.52+0.8i
Zl-fo = 2.221+1.322i
Zl-2fo = 0.8+0.69i
Zl-3fo = NaN
Zs-fo = 0.94-2.29i
Zs-2fo = 0.47-0.06i
Zs-3fo = 0.52+0.8i
Zl-fo = 2.53+0.746i
Zl-2fo = 0.8+0.69i
Zl-3fo = NaN
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 6 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Power Driveup Performance over Temperatures of 1.0 – 1.1 GHz EVB 1
Notes:
1. Test Conditions: VD = 65 V, IDQ = 1.5 A, 100 us Pulse Width, 10% Duty Cycle.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 7 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Power Driveup Performance at 25°C of 1.0 – 1.1 GHz EVB 1
Notes:
1. Test Conditions: VD = 65 V, IDQ = 1.5 A, 100 us Pulse Width, 10% Duty Cycle.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 8 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Thermal and Reliability Information – CW 1, 2, 3
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
°C/W
°C
Hrs
°C
°C/W
°C
Hrs
°C
°C/W
°C
0.26
131.3
4.0E10
117 (2)
0.29
188.1
1.0E8
154 (2)
0.33
85 °C Case
Pdiss = 172.8 W
CW
(1)
(1)
(1)
)
)
)
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 345.6 W
CW
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 518.4 W
CW
259.5
4.0E5
195 (2)
Hrs
°C
Peak Channel Temperature, IR (2)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability.
Unless otherwise noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 9 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Thermal and Reliability Information – Pulsed1, 2, 3
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
°C/W
0.12
85 °C Case
Pdiss = 518 W
Pulse: 100 us PW, 10% DC
(1)
(1)
(1)
(1)
151
)
)
)
)
°C
5.0E10
130 (2)
0.13
Hrs
°C
°C/W
°C
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 691 W
Pulse: 100 us PW, 10% DC
177
3.0E9
147 (2)
0.14
Hrs
°C
°C/W
°C
85 °C Case
Pdiss = 864 W
Pulse: 100 us PW, 10% DC
209
1.7E8
166 (2)
0.15
Hrs
°C
°C/W
°C
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 1037 W
Pulse: 100 us PW, 10% DC
239
1.8E7
183 (2)
Hrs
°C
Peak Channel Temperature, IR (2)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability.
Unless otherwise noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 10 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Median Lifetime 1, 2
Median Lifetime vs. Channel Temperature
1.00E+19
1.00E+18
1.00E+17
1.00E+16
1.00E+15
1.00E+14
1.00E+13
1.00E+12
1.00E+11
1.00E+10
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (°C)
Notes:
1. Test Conditions: VD = +50ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing.
2. For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 11 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Maximum Gate Current
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 12 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Pin Configuration and Description 1
Note:
1- The QPD1025 will be marked with the “QPD1025” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin
Symbol
Description
1, 2
RF IN / VG
Gate
3, 4
5
RF OUT / VD
Source
Drain
Source / Ground / Backside of part
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 13 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Mechanical Drawing 1
Note:
1- All dimensions are in inches. Dimension tolerance is ± 0.005 in, unless noted otherwise.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 14 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
1.0 – 1.1 GHz Application Circuit - Schematic
Bias-up Procedure
1. Set VG to -5 V.
Bias-down Procedure
1. Turn off RF signal.
2. Set ID current limit to 4 A.
3. Apply 65 V VD.
4. Slowly adjust VG until ID is set to 1.5 A.
5. Apply RF.
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge.
4. Turn off VG
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 15 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
1.0 – 1.1 GHz Application Circuit – Layout 1, 2
Notes:
1. PCB material is RO4350B 0.020” thick, 2 oz. copper each side.
2. The two gates could be tied together or (optionally) adjusted independently.
1.0 – 1.1 GHz Application Circuit – Bill of Material
Reference Design
C15,C16,C17,C18
C1
Value
8.2 pF
10 pF
Qty
4
Manufacturer
Part Number
600F8R2BT250T
American Technical Ceramics
American Technical Ceramics
American Technical Ceramics
Murata Electronics
1
600S100FT250XT
600S6R8BT250T
GRM31CR71H475KA12L
600F7R5BT250XT
C5750X7S2A106M230KB
600S9R1BT250XT
MAL215099708E3
600F6R8BT250XT
800B3R0BT500XT
ERJ-3EKF1000
C2,C3,C4
6.8 PF
4.7 uF
7.5 pF
10 uF
3
C9,C10
2
C19,C20,C21,C22
C26,C27
4
American Technical Ceramics
TDK Singapore (Pte) Ltd
American Technical Ceramics
Vishay Americas Inc
2
C5,C6,C7,C8
C28,C29
9.1 pF
680 uF
6.8 pF
3.0 pF
100 Ohm
10 Ohm
110 nH
N-Type
4
2
C11,C12,C13,C14
C23,C30
4
American Technical Ceramics
American Technical Ceramics
Panasonic Industrial Devices
2
R1
1
R2,R3
2
Vishay Dale Electronics
Coilcraft, Inc.
CRCW060310R0FKEA
0805CS-111XJBC
1101055
L1,L2
2
Connectors
2
Huber+Suhner, Inc.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 16 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Recommended Solder Temperature Profile
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 17 of 18 -
QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Handling Precautions
Parameter
Rating
Class 1C
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
JEDEC JS-001
JEDEC JS-002
Caution!
ESDꢀ–ꢀCharged Device Model (CDM) Class C3
ESD-Sensitive Device
JESD J-STD-020
MSLꢀ–ꢀMoisture Sensitivity Level
MSL3
(260°C Convection reflow)
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
Qorvo:
Web: www.Qorvo.com
Email: info-sales@qorvo.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2017 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 18 of 18 -
相关型号：
©2020 ICPDF网 联系我们和版权申明