TAT7427B [TRIQUINT]
High Gain RF Amplifier, 75 Ω, 50-1200 MHz; 高增益RF放大器， 75 I© ， 50-1200 MHz的
| 型号： | TAT7427B |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | High Gain RF Amplifier, 75 Ω, 50-1200 MHz |
| 文件： | 总7页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Applications
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Distribution Amplifiers
Multi Dwelling Units
Drop Amplifiers
Single Ended Gain Blocks
SOT-89 Package
Product Features
Functional Block Diagram
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50-1200 MHz Bandwidth
High Gain : 18.5 dB
+38 dBm typical OIP3
2.5 dB typical NF
Low Distortion : CSO -70dBc, CTB -88dBc tested at
10dBmV/ch at input, 80 ch NTSC
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pHEMT Device Technology
SOT-89 Package
Single +8V Supply
General Description
Pin Configuration
The TAT7427B is a high gain 75 Ω RF Amplifier designed
for CATV applications from 50 to 1000 MHz (with
operation up to 1.25GHz). The balance of low noise and
distortion provides an ideal solution for drop and
distribution amplifiers. It is particularly well suited for
new home networks requiring higher gain for a large
number of splits.
Pin #
Symbol
RF_ Input
Ground
1
2, 4
3
RF_Output / Vdd
The TAT7427B is fabricated using 6-inch GaAs pHEMT
technology to optimize performance and cost. It provides
excellent gain and return loss consistency inherent to the
pHEMT process.
Ordering Information
Part No.
TAT7427B-T1
Description
High Gain 75 Ω RF Amplifier
(Lead free / RoHS compliant SOT-89 Pkg)
TAT7427B-T1-EB
Drop Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev A 05-15-11
- 1 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min Typ Max Units
Storage Temperature
-55 to 150 oC
Vdd
8
V
Operating Case Temperature -20
85
oC
oC
Tj (For >106 MTTF)
150
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions: Case Temperature 25ºC
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
CSO
CTB
Output IP2
Output IP3
Supply Voltage, Vcc
Device Voltage
Supply Current, Idd
Thermal Resistance (θjc)
Conditions
Min
50
Typical
Max Units
1002
MHz
dB
18.5
±0.3
2.5
23
dB
dB
dB
dB
dBc
dBc
dBm
dBm
V
20
10 dBmV/ch at input, 80 ch NTSC flat
10 dBmV/ch at input, 80 ch NTSC flat
See Note 1.
-70
-88
61
38
+8
+6
145
36
See Note 1.
V
See Note 2.
175
mA
oC/W
Notes:
1. OIP3 and OIP2 tested with two tones at 225 MHz and 325 MHz. Measured at 10 dBm/tone output power.
2. Voltage at the device is 6V.
Data Sheet: Rev A 05-15-11
- 2 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Typical Performance Data
Note: Temperature indicated in plots below is Case Temperature.
Gain vs. Frequency
Input Return Loss vs. Frequency
20
19
18
17
16
15
0
5
10
15
20
25
30
35
40
45
-40C
25C
85C
-40C
25C
85C
50
250
450
650
850
1050
1250
50
250
450
650
850
1050
1250
Frequency (MHz)
Frequency (MHz)
Output Return Loss vs. Frequency
CSO vs. Frequency
0
5
10 dBmV/ch at input, 80 ch NTSC flat
-50
25C
-55
-60
-65
-70
-75
-80
10
-40C
-40C
85C
15
20
25
30
35
40
25C
85C
50
250
450
650
850
1050
1250
0
100
200
300
400
500
600
Frequency (MHz)
Frequency (MHz)
CTB vs. Frequency
10 dBmV/ch at input, 80 ch NTSC flat
-60
-65
-70
-75
-80
-85
-40C
25C
85C
-90
0
100
200
300
400
500
600
Frequency (MHz)
Data Sheet: Rev A 05-15-11
- 3 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Pin Description
Pin
Symbol
RF_IN
GND
Description
RF Input , DC voltage present, blocking capacitor required
Ground
1
2
3
RF_OUT
GND
RF Output , DC voltage present, blocking capacitor required
Multiple vias should be employed to minimize inductance and thermal resistance
Backside Paddle
Applications Information
PC Board Layout
Core is 0.062”, FR4, єr = 4.7. Metal layers are 1-oz copper.
The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has
been developed to accommodate lead and package tolerances. Since
surface mount processes vary from company to company, careful
process development is recommended.
.
Data Sheet: Rev A 05-15-11
- 4 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Applications Information
PC Board Schematic
Bill of Material
Reference Desg.
Value
Description
Manufacturer Part Number
U1
RF Amplifier, 75 ohm , 50-1000MHz TriQuint
TAT7427B
C1, C4, C5
0.01 uF
680 pF
120 pF
880 nH
3.9 nH
5.6 nH
500 nH
16 Ω
Cap, Chip, 0603, 10%, 50V, X7R
Cap, Chip, 0402, 50V, 5%, COG
Cap, Chip, 0402, 50V, 5%, COG
Coil, Wire Wound, 1206, ±10%
Inductor, Chip, 0603, 5%
various
various
various
various
various
various
various
various
C2
C3
L1
L2
L3
Inductor, Chip, 0603, 5%
L4
Coil, Wire Wound, 1206, ±10%
Resistor, Chip, 1206, ±5%, 1/4W
R1, R2
Data Sheet: Rev A 05-15-11
- 5 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Mechanical Information
Package Information and Dimensions
This package is lead-free, RoHS-compliant, and green. The
plating material on the pins is 100% matte tin. It is
compatible with both lead-free (maximum 260 °C reflow
temperature) and leaded (maximum 245 °C reflow
temperature) soldering processes.
The TAT7427B will be marked with a “TAT7427B”
designator and an
8
digit alphanumeric lot code
(XXXXYYWW). The first 4 digits (XXXX) are the lot code.
The last 4 digits (YYWW) are the date code consisting of the
year and work week of assembly.
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Data Sheet: Rev A 05-15-11
- 6 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
TAT7427B
High Gain RF Amplifier, 75 Ω, 50-1200 MHz
Product Compliance Information
ESD Information
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating:
Value:
Test:
Class 1B
Passes ≥ 500V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Standard:
This product also has the following attributes:
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Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
ESD Rating:
Value:
Test:
Class IV
Passes ≥ 2000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Standard:
MSL Rating
MSL 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC
standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
+1.707.526.4498
+1.707.526.1485
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev A 05-15-11
- 7 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.
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