TGA2627-SM_15 [TRIQUINT]
6 to 12 GHz GaN Driver Amplifier;
| 型号： | TGA2627-SM_15 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 6 to 12 GHz GaN Driver Amplifier |
| 文件： | 总16页 (文件大小：1619K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Applications
•
•
•
Commercial and Military Radar
Communications
Electronic Warfare (EW)
Product Features
Functional Block Diagram
• Frequency Range: 6 - 12 GHz
• Push-Pull Configuration
• Low Harmonic Content; ≤ -40 dBc at Psat
• Small Signal Gain: > 27 dB
• Power: > 32 dBm
• PAE: > 15 %
• IM3: < -20 dBc
• Input Return Loss > 15 dB
• Output Return Loss > 10 dB
• Bias: VD = 25 V, IDQ = 200 mA
• Package Dimensions: 5.0 x 5.0 x 1.42 mm
General Description
Pad Configuration
TriQuint's TGA2627-SM is a push-pull driver amplifier
fabricated on TriQuint's TQGaN25 0.25um GaN on SiC
production process. The TGA2627-SM operates from 6
to 12 GHz and provides 32 dBm of output power with 18
dB of large signal gain and greater than 20 % power-
added efficiency. The push-pull topology yields > 40dB
of harmonic suppression at Psat.
Pad Number
Symbol
1-4, 6-9,11, 13, 15-19, 21-26, 28,
30, 32
GND
5
RF Input
VG12
10, 31
12, 29
14, 27
20
VD
VG3
Using GaN MMIC technology and air-cavity ceramic
QFN packaging, the TGA2627-SM provides a low cost
driver solution that provides the added benefit of
operating on the same voltage rail as the corresponding
GaN HPA. It can also serve as the output power
amplifier on lower power architectures.
RF Output
The TGA2627-SM is offered in a 5x5 mm air-cavity QFN
with an aluminum nitride base and LCP lid. It is well-
matched to 50 ohms and includes integrated DC
blocking caps on both RF ports allowing for simple
system integration.
Ordering Information
Part
ECCN
Description
Lead-Free & RoHS compliant.
6 -12 GHz GaN
Driver Amplifier
TGA2627-SM
EAR99
Evaluation Boards are available on request.
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 1 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Value
40 V
Parameter
Drain Voltage (VD)
Value
25 V
Gate Voltage Limits (VG)
Drain Current (ID)
-8 V / 0 V
550 mA
Gate Voltage (VG), typical
Quiescent Drain Current (IDQ
-2.33 V
200 mA
430 mA
)
Gate Current (IG @TCH = 200 °C)
Power Dissipation, 85 °C (Pdiss)
Input Power, CW, 50 Ω 1
Input Power, CW, VSWR 10:1 1
Channel Temperature (TCH)
Notes:
-1.4 / 11.2 mA
12.3 W
Operating Drain Current (ID_DRIVE)
30 dBm
27 dBm
275 °C
1. VD = 25V, IDQ = 40mA, TB = 85 °C
Electrical Specifications
Test conditions, unless otherwise noted: T = 25 °C, VD = 25V, IDQ = 200 mA, part mounted to EVB (page 11)
Parameter
Min
6
Typical
Max
12
Units
GHz
dBm
%
Operating Frequency Range
Output Power (@ Pin = 13 dBm)
Power Added Efficiency (@ Pin = 13 dBm)
Small Signal Gain
> 32
> 15
> 27
dB
Input Return Loss
> 16
dB
Output Return Loss
> 10
dB
IM3 (POUT/tone < 26 dBm)
2nd Harmonic Suppression
3rd Harmonic Suppression
Output Power Temperature Coefficient
< -20
≤ -40
≤ -40
-0.012
dBc
dBc
dBc
dB/°C
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 2 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Specifications
Thermal and Reliability Information
Parameter
Conditions
Value
10.6
Units
ºC/W
°C
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (1)
Median Lifetime (TM)
Note:
TPKG = 85°C, VD = 25 V, IDQ = 200 mA,
ID_DRIVE = 390 mA, PIN = 15 dBm, POUT = 31
dBm, PDISS = 8.5 W
175
1.3E08
Hrs
1. Die mounted to 12mil aluminum nitride base using conductive epoxy; package backside temperature fixed at 85 °C.
Median Lifetime
Test Conditions: 40 V; Failure Criterion = 10% reduction in ID MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25
50
75
100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Preliminary Datasheet: Rev - 09-05-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
- 3 of 16 -
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
Gain vs. Freq. vs. Temp.
Input Return Loss vs. Freq. vs. Temp.
45
40
35
30
25
20
15
10
5
0
-5
VD = 25 V, IDQ = 200 mA
VD = 25 V, IDQ = 200 mA
-10
-15
-20
-25
-30
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
0
4
5
6
7
8
Frequency (GHz)
9
10
11
12
13
14
4
5
6
7
8
Frequency (GHz)
9
10
11
12
13
14
Output Return Loss vs. Freq. vs. Temp.
VD = 25 V, IDQ = 200 mA
0
-5
-10
-15
-20
-25
- 40 C
+25 C
+85 C
-30
4
5
6
7
8
9
10
Frequency (GHz)
11
12
13
14
Gain vs. Frequency vs. IDQ
Input Return Loss vs. Frequency vs. IDQ
VD = 25 V, Temp. = 25 °C
34
32
30
28
26
24
22
20
0
-5
VD = 25 V, Temp. = 25 °C
-10
-15
-20
-25
-30
100 mA
150 mA
200 mA
100 mA
150 mA
200 mA
4
5
6
7
8
Frequency (GHz)
9
10
11
12
13
14
4
5
6
7
8
Frequency (GHz)
9
10
11
12
13
14
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 4 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
Output Return Loss vs. Frequency vs. IDQ
VD = 25 V, Temp. = 25 °C
0
-5
-10
-15
-20
100 mA
-25
150 mA
200 mA
-30
4
5
6
7
8
9
10
Frequency (GHz)
11
12 13
14
Gain vs. Frequency vs. VD
Input Return Loss vs. Frequency vs. VD
Temp. = 25 °C, IDQ = 200 mA
34
32
30
28
26
24
22
20
0
-5
Temp. = 25 °C, IDQ = 200 mA
-10
-15
-20
-25
-30
20 V
25 V
30 V
20 V
25 V
30 V
4
5
6
7
8
Frequency (GHz)
9
10
11
12
13
14
4
5
6
7
8
Frequency (GHz)
9
10
11
12
13
14
Output Return Loss vs. Frequency vs. VD
Temp. = 25 °C, IDQ = 200 mA
0
-5
-10
-15
-20
-25
20 V
25 V
30 V
-30
4
5
6
7
8
9
10
Frequency (GHz)
11
12
13
14
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 5 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
Output Power vs. Frequency vs. PIN
VD = 25 V, IDQ = 200 mA, Temp. = 25 °C
Power Added Eff.vs. Freq. vs. PIN
VD = 25 V, IDQ = 200 mA, Temp. = 25 °C
36
34
32
30
28
26
24
22
20
18
40
35
30
25
20
15
10
5
1 dBm
10 dBm
4 dBm
13 dBm
7 dBm
11
1 dBm
10 dBm
4 dBm
13 dBm
7 dBm
11
0
5
6
7
8
Frequency (GHz)
9
10
12
13
5
6
7
8
Frequency (GHz)
9
10
12
13
Drain Current vs. Frequency vs. PIN
VD = 25 V, IDQ = 200 mA, Temp. = 25 °C
Power Gain vs. Frequency vs. PIN
VD = 25 V, IDQ = 200 mA, Temp. = 25 °C
500
450
400
350
300
250
200
150
100
35
30
25
20
15
10
1 dBm
10 dBm
4 dBm
13 dBm
7 dBm
11
1 dBm
10 dBm
4 dBm
13 dBm
7 dBm
11
5
6
7
8
Frequency (GHz)
9
10
12
13
5
6
7
8
Frequency (GHz)
9
10
12
13
Power Added Eff. vs. Freq. vs. Temp.
VD = 25 V, IDQ = 200 mA, PIN = 13 dBm
Output Power vs. Frequency vs. Temp.
VD = 25 V, IDQ = 200 mA, PIN = 13 dBm
40
35
30
25
20
15
10
5
36
34
32
30
28
26
- 40 C
8
+25 C
9
+85 C
11
- 40 C
8
+25 C
9
+85 C
11
0
5
6
7
10
12
13
5
6
7
10
12
13
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 6 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
Drain Current vs. Frequency vs. Temp.
VD = 25 V, IDQ = 200 mA, PIN = 13 dBm
Power Gain vs. Frequency vs. Temp.
VD = 25 V, IDQ = 200 mA, PIN = 13 dBm
550
500
450
400
350
300
250
200
150
24
22
20
18
16
14
- 40 C
8
+25 C
9
+85 C
10 11
- 40 C
8
+25 C
9
+85 C
11
5
6
7
12
13
5
6
7
10
12
13
Frequency (GHz)
Frequency (GHz)
PAE vs. Input Power vs. Temp.
Output Power vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 6.0 GHz
40
35
30
25
20
15
40
35
30
25
20
15
10
5
VD = 25 V, IDQ = 200 mA, Freq. = 6.0 GHz
- 40 C
+25 C
+85 C
- 40 C
5
+25 C
10
+85 C
15
0
-10
-5
0
5
10
15
-10
-5
0
Input Power (dBm)
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 6.0 GHz
40
35
30
25
20
15
- 40 C
+25 C
+85 C
10
-10
-5
0
5
10
15
Input Power (dBm)
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 7 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
PAE vs. Input Power vs. Temp.
Output Power vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 9.0 GHz
40
35
30
25
20
15
40
35
30
25
20
15
10
5
VD = 25 V, IDQ = 200 mA, Freq. = 9.0 GHz
- 40 C
+25 C
+85 C
- 40 C
5
+25 C
10
+85 C
15
0
-10
-10
-10
-5
0
5
10
15
-10
-10
-10
-5
0
Input Power (dBm)
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 9.0 GHz
Output Power vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 12.0 GHz
40
35
30
25
20
15
40
35
30
25
20
15
10
- 40 C
+25 C
+85 C
- 40 C
+25 C
+85 C
-5
0
5
10
15
-5
0
5
10
15
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 12.0 GHz
Power Gain vs. Input Power vs. Temp.
VD = 25 V, IDQ = 200 mA, Freq. = 12.0 GHz
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
- 40 C
5
+25 C
10
+85 C
15
- 40 C
+25 C
+85 C
0
-5
0
-5
0
5
10
15
Input Power (dBm)
Input Power (dBm)
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 8 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
2nd Harmonic vs. PIN vs. Freq.
VD = 25 V, IDQ = 200 mA, Temp. = 25
3rd Harmonic vs. PIN vs. Freq.
VD = 25 V, IDQ = 200 mA, Temp. = 25 °C
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
°
C
6 GHz
8 GHz
6 GHz
8 GHz
10 GHz
12 GHz
10 GHz
12 GHz
17
19
21
23
25
Output Power (dBm)
27
29
31
33
35
30
30
17
19
21
23
25
Output Power (dBm)
27
29
31
33
35
30
30
IM3 vs. Output Power vs. Frequency
IM5 vs. Output Power vs. Frequency
0
-10
-20
-30
-40
-50
0
-10
-20
-30
-40
-50
-60
-70
-80
VD = 25 V, IDQ = 200 mA, Temp. = 25
°
C, 10 MHz Spacing
VD = 25 V, IDQ = 200 mA, Temp. = 25 °C, 10 MHz Spacing
6 GHz
8 GHz
6 GHz
8 GHz
10 GHz
12 GHz
10 GHz
12 GHz
18
20
22
Output Power per Tone (dBm)
24
26
28
18
20
22
Output Power per Tone (dBm)
24
26
28
IM3 vs. Output Power vs. Temperature
IM5 vs. Output Power vs. Temperature
0
-10
-20
-30
-40
-50
0
-10
-20
-30
-40
-50
-60
-70
-80
VD = 25 V, IDQ = 200 mA, Freq. = 10 GHz, 10 MHz Spacing
VD = 25 V, IDQ = 200 mA, Freq. = 10 GHz, 10 MHz Spacing
+25 C
+85 C
+25 C
+85 C
18
20
22
Output Power per Tone (dBm)
24
26
28
18
20
22
Output Power per Tone (dBm)
24
26
28
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 9 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Application Circuit
Bias-up Procedure
1. Set ID limit to 400 mA, IG limit to 4.5 mA
2. Set VG to -5.0V
Bias-down Procedure
1. Turn off RF signal
2. Set VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
3. Set VD +25V
4. Adjust VG more positive until IDQ = 200 mA
5. Apply RF signal
4. Turn off VD supply
5. Turn off VG supply
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 10 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Applications Information
Evaluation Board Layout
RF Layer is 0.008” thick Rogers Corp.
RO4003C, εr = 3.38. Metal layers are 0.5 oz.
copper. The microstrip line at the connector
interface is optimized for the Southwest
Microwave end launch connector 1092-02A-
5.
The pad pattern shown has been developed
and tested for optimized assembly at
TriQuint Semiconductor. The PCB land
pattern
has
been
developed
to
accommodate lead and package tolerances.
Since surface mount processes vary from
company to company, careful process
development is recommended.
Bill of Materials
Ref. Designation
C1 – C4, C7, C8
C5, C6, C9, C10
R1 – R4, R7, R8
R5, R6, R9, R10
Value
0.01 pF
Description
Manufacturer Part Number
Cap., 50V, 10% X7R, 0402 case
Cap., 50V, 10% X5R, 1206 case
Resistor, 0402 case
Various
Various
Various
Various
1.0 uF
5.1 Ohms
0.0 Ohms
Resistor, 0402 case
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 11 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Mounting Detail
Note:
Multiple vias should be employed under package center paddle to minimize inductance and thermal resistance.
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 12 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Mechanical Information
The TGA2627-SM will be marked with the “ZZZZ” and “YYWW” designators and a lot code marked below the part
designator. Here, the “ZZZZ” will be “2627”. The “YY” represents the last two digits of the year the part was
manufactured, the “WW” is the work week, and the “XXXX” is an auto-generated number.
This package is lead-free/RoHS-compliant. This package is compatible with both lead free and tin-lead soldering
processes.
Dimensions are in millimeters.
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 13 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Pad Description
Bottom view of package base
Pin Number
1-4, 6-9,11, 13, 15-19,
21-26, 28, 30, 32
Label
GND
Description
Connected to ground paddle (33); must be grounded to PCB to
improve isolation.
5
RF Input
VG12
RF input, matched to 50 Ω, DC blocked
Gate voltage, 1st and 2nd stages. Bias network required on both
sides.
10, 31
12, 29
14, 27
20
VD
Drain voltage. Bias network required on both sides.
Gate voltage, 3rd stage. Bias network required on both sides.
RF output, matched to 50 Ω, DC blocked
VG3
RF Output
Backside paddle. Multiple vias should be employed to minimize
inductance and thermal resistance.
33
GND
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 14 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Recommended Soldering Temperature Profile
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 15 of 16 -
© 2014 TriQuint
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020 Lead free
solder, 260 °C.
Caution! ESD-Sensitive Device
MSL Rating
ESD Rating: TBD
TBD
TBD at 260 °C convection reflow
The part is rated Moisture Sensitivity Level TBD
JEDEC standard IPC/JEDEC J-STD-020.
Value:
Test:
Standard:
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ECCN
RoHS-Compliance
This part is compliant with EU 2002/95/EC RoHS directive
(Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment).
US Department of Commerce: EAR99
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
Preliminary Datasheet: Rev - 09-05-14
Disclaimer: Subject to change without notice
- 16 of 16 -
© 2014 TriQuint
www.triquint.com
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