概述
数据手册TGA4906_15 概述
4 Watt Ka-Band HPA
TGA4906_15 数据手册
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PDF下载TGA4906
4 Watt Ka-Band HPA
Key Features
•
•
•
•
•
•
•
Frequency Range: 28 - 31 GHz
36 dBm Nominal Psat
Gain: 24 dB
Return Loss: -8 dB
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
Technology: 3MI 0.15 um Power pHEMT
Chip Dimensions: 2.98 x 2.90 x 0.05 mm
Measured Performance
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
Primary Applications
Ka-Band VSAT
•
38
37
36
35
34
33
32
31
30
Product Description
The TriQuint TGA4906 is a compact 4 Watt High
Power Amplifier for Ka-band applications. The part
is designed using TriQuint’s proven standard 0.15
um gate Power pHEMT production process. The
TGA4906 provides a nominal 36 dBm of output
power at an input power level of 14 dBm with a
small signal gain of 24 dB.
Psat
P1dB
28
28.5
29
29.5
30
30.5
31
The part is ideally suited for low cost emerging
markets such as base station transmitters for
satellite ground terminals and point to point radio.
Frequency (GHz)
30
27
24
21
18
15
12
9
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
-30
Gain
IRL
ORL
6
3
0
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Table I
Absolute Maximum Ratings 1/
Symbol
Vd-Vg
Vd
Parameter
Value
Notes
Drain to Gate Voltage
11 V
6.5 V
Drain Voltage
2/
2/
2/
Vg
Gate Voltage Range
Drain Current
-5 to 0 V
3.7 A
Id
Ig
Gate Current Range
Input Continuous Wave Power
Channel Temperature
-15 to 202 mA
26 dBm
200 ºC
Pin
Tchannel
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Table II
Recommended Operating Conditions
Symbol
Vd
Parameter 1/
Value
6 V
Drain Voltage
Drain Current
Idq
1.6 A
3.3 A
-0.75 V
Id_Drive
Vg
Drain Current under RF Drive
Gate Voltage
1/
See assembly diagram for bias instructions.
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Table III
RF Characterization Table
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
SYMBOL
PARAMETER
TEST
CONDITIONS
MINIMUM NOMINAL UNITS
Gain
Small Signal Gain
f = 28 - 30 GHz
f = 31 GHz
21
16
24
dB
IRL
ORL
Psat
Input Return Loss
Output Return Loss
f = 28 - 31 GHz
-8
-10
36
dB
dB
f = 28 - 31 GHz
Saturated Output
Power
f = 28 GHz
34.3
35.3
dBm
f = 29 - 31 GHz
OTOI
Output TOI
f = 28 - 31 GHz
39
dBm
Gain Temp Coefficient
f = 28 - 31 GHz
-0.04
dB/0C
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
Notes
Maximum Power Dissipation
Tbaseplate = 70 ºC
Pd = 20.8 W
1/ 2/
Tchannel = 150 ºC
Tm = 1.0E+6 Hrs
Thermal Resistance, θjc
Vd = 6 V
θjc = 3.85 (ºC/W)
Tchannel = 107 ºC
Tm = 2.0E+8 Hrs
Id = 1600 mA
Pd = 9.6 W
Tbaseplate = 70 ºC
Thermal Resistance, θjc
Vd = 6 V
θjc = 3.85 (ºC/W)
Tchannel = 131 ºC
Tm = 9.2E+6 Hrs
Under RF Drive
Id = 3300 mA
Pout = 36 dBm
Pd = 15.83 W
Tbaseplate = 70 ºC
Mounting Temperature
Storage Temperature
30 Seconds
320 ºC
-65 to 150 ºC
1/
2/
For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 ºC – Tbase ºC)/θjc.
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
30
27
24
21
18
15
12
9
6
3
0
20
22
24
26
28
30
32
34
36
Frequency (GHz)
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
-30
IRL
ORL
20
22
24
26
28
30
32
34
36
Frequency (GHz)
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
38
37
36
35
34
33
32
31
30
Psat
P1dB
25
26
27
28
29
30
31
32
33
Frequency (GHz)
40
36
32
28
24
20
16
12
8
28GHz
29GHz
30GHz
31GHz
32GHz
4
0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Input Power (dBm)
6
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
30
4.0
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1.0
27
24
21
18
15
12
9
Gain @ 30GHz
PAE @ 30GHz
Id @ 30GHz
6
3
0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Input Power (dBm)
7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
50
40
30
20
10
Pin = -6 dBm
0
28 28.5 29 29.5 30 30.5 31 31.5 32
Frequency (GHz)
0
-10
-20
-30
28 GHz
-40
29 GHz
30 GHz
-50
31 GHz
32 GHz
-60
10 12 14 16 18 20 22 24 26 28 30 32
Pout / tone (dBm)
8
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
30
-40 C
27
+25 C
+85 C
24
21
18
15
12
9
6
3
0
20
22
24
26
28
30
32
34
36
Frequency (GHz)
38
37
36
35
34
33
32
31
30
-40 C
+25 C
+85 C
25
26
27
28
29
30
31
32
33
Frequency (GHz)
9
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Electrical Schematic
Vd_3
top
Vd_3
bottom
Vd_2
bottom
Vd_2
top
Vd_1
bottom
Vd_1
top
2
10
4
8
5
7
TGA4906
1
6
RF Input
RF Output
3
9
Vg_1,2,3
top
Vg_1,2,3
bottom
Bias Procedures
Bias-up Procedure
Vg set to -1.5 V
Vd_set to +6 V
Bias-down Procedure
Turn off RF supply
Reduce Vg to -1.5V. Ensure Idq ~ 0 mA
Turn Vd to 0 V
Adjust Vg more positive until Idq is 1.6 A.
This will be ~ Vg = -0.75 V
Apply RF signal to input
Turn Vg to 0 V
10
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Mechanical Drawing
2.90
2.80
2.79
1.45
0.11
3
2
4
5
1.45
6
1
8
7
10
9
0.10
0.00
Units: millimeters
Thickness: 0.05
Die x,y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad #1
Bond Pad #2
Bond Pad #3
Bond Pad #4
Bond Pad #5
RF In
Vd_1 top
Vg_1,2,3 top
Vd_2 top
Vd_3 top
0.125 x 0.200
0.150 x 0.100
0.100 x 0.100
0.225 x 0.125
0.225 x 0.125
Bond Pad #6
Bond Pad #7
Bond Pad #8
Bond Pad #9
Bond Pad #10
RF Out
0.125 x 0.200
0.225 x 0.125
0.225 x 0.125
0.100 x 0.100
0.150 x 0.100
Vd_3 bottom
Vd_2 bottom
Vg_1,2,3 bottom
Vd_1 bottom
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Recommended Assembly Diagram
Vg
(Typ. -0.75V)
Vd
(6V, 1.6A)
20
1
F
1
F
0.01uF
0.01uF
0.01uF
RF IN
RF OUT
0.01 uF
0.01 uF
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
12
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
TGA4906
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
• Force, time, and ultrasonics are critical bonding parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Ordering Information
Part
Package Style
TGA4906
GaAs MMIC Die
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
13
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sept 2010 © Rev B
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