TGB2010-00-EPU [TRIQUINT]
Bessel Filter; 贝塞尔滤波器
| 型号： | TGB2010-00-EPU |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | Bessel Filter |
| 文件： | 总7页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Product Information
September 22, 2003
Bessel Filter
TGB2010-EPU
Key Features and Performance
•
•
•
•
•
•
6, 7, 8, 9, 10 & 11 GHz Filters
<M1.25ps Group Delay to Fo
>15dB Return Loss to 2Fo
Filter Bandwidth ± 0.5 GHz
3MI Technology
Chip Dimensions:
0.49 x 0.49 x 0.10 mm
(0.019 x 0.019 x 0.004 inches)
Preliminary Measured Performance
0
-1
-2
-3
-4
6 GHz
-5
7 GHz
-6
-7
-8
8 GHz
9 GHz
10 GHz
11 GHz
-9
-10
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Frequency (GHz)
45
40
35
30
25
20
15
10
6 GHz
7 GHz
9 GHz
8 GHz
10 GHz
11 GHz
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 22, 2003
TGB2010-EPU
TABLE I
MAXIMUM RATINGS
Symbol
PIN
Parameter
Input Continuous Wave Power
Mounting Temperature
Value
TBD
Notes
1/
TM
320 0C
(30 Seconds)
TSTG
Storage Temperature
-65 to 150 0C
1/ These ratings represent the maximum operable values for this device
TABLE II
PART NUMBER DESIGNATIONS
Part No
Cutoff Frequency
Thru
TGB2010-00-EPU
TGB2010-06-EPU
TGB2010-07-EPU
TGB2010-08-EPU
TGB2010-09-EPU
TGB2010-10-EPU
TGB2010-11-EPU
6 M 0.5 GHz
7 M 0.5 GHz
8 M 0.5 GHz
9 M 0.5 GHz
10 M 0.5 GHz
11 M 0.5 GHz
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 22, 2003
TGB2010-EPU
Measured Performance
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
11 GHz
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
0
-5
10 GHz
9 GHz
-10
-15
-20
-25
-30
-35
-40
7 GHz 8 GHz
6 GHz
11 GHz
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 22, 2003
TGB2010-EPU
Measured Performance
45
40
35
30
25
20
15
10
6 GHz
7 GHz
9 GHz
8 GHz
10 GHz
11 GHz
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 22, 2003
TGB2010-EPU
Mechanical Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 22, 2003
TGB2010-EPU
Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 22, 2003
TGB2010-EPU
Assembly Process Notes
Reflow process assembly notes:
S
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300LC.
(30 seconds maximum)
S
S
S
S
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
S
S
S
S
S
S
S
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
S
S
S
S
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200LC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
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