TGF2021-04 [TRIQUINT]
DC - 12 GHz Discrete power pHEMT; DC - 12 GHz的分立功率pHEMT制
| 型号： | TGF2021-04 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | DC - 12 GHz Discrete power pHEMT |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
TGF2021-04
Key Features and Performance
•
•
•
•
•
•
•
Frequency Range: DC - 12 GHz
> 36 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
4mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 300-500mA
(Under RF Drive, Id rises from 300mA to 960mA)
•
Chip Dimensions: 0.57 x 1.30 x 0.10 mm
(0.022 x 0.051 x 0.004 in)
Product Description
Primary Applications
•
•
•
•
•
Point-to-point Radio
High-reliability space
Military
The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
Base Stations
Broadband Wireless Applications
The TGF2021-04 typically provides
> 36 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-04 appropriate for high efficiency
applications.
35
30
25
20
15
10
5
MSG
MAG
The TGF2021-04 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
0
0
2
4
6
8
10
12
14
16
The TGF2021-04 has a protective surface
passivation layer providing environmental
robustness.
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
TABLE I
MAXIMUM RATINGS
Symbol
V+
Parameter 1/
Value
12.5 V
Notes
Positive Supply Voltage
2/
V-
I+
Negative Supply Voltage Range
Positive Supply Current
-5V to 0V
1.8 A
2/
| IG |
PIN
Gate Supply Current
28 mA
Input Continuous Wave Power
Power Dissipation
31 dBm
See note 3
150 °C
2/
2/ 3/
4/
PD
TCH
TM
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
320 °C
TSTG
-65 to 150 °C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 21.7 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 qC, Nominal)
Symbol
Idss
Parameter
Minimum
Typical
1200
1500
-1
Maximum
Unit
mA
mS
V
Saturated Drain Current
Transconductance
Pinch-off Voltage
-
-
Gm
-
-
VP
-1.5
-30
-0.5
-14
VBGS
Breakdown Voltage
Gate-Source
-
V
VBGD
Breakdown Voltage
Gate-Drain
-30
-
-14
V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2021-04
Vd = 10V
PARAMETER
Vd = 12V
Idq = 300mA
SYMBOL
UNITS
Idq = 300mA
Power Tuned:
36.8
37.5
dBm
%
Psat
PAE
Saturated Output Power
50
11
48
11
Power Added Efficiency
Power Gain
Gain
dB
Ω
6.65
7.99
Rp 2/
Cp 2/
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
1.855
1.907
pF
-
0.847 172.6
0.847 170.8
ΓL 3/, 4/
Efficiency Tuned:
Psat
PAE
36
59
36.7
55
dBm
%
Saturated Output Power
Power Added Efficiency
Power Gain
Gain
11.5
11
dB
Ω
Rp 2/
Cp 2/
ΓL 3/, 4/
12.25
13.90
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
2.154
2.021
pF
-
0.879 167.6
0.885 166.3
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Test Conditions
TCH
TM
(HRS)
TJC
(qC/W)
Parameter
(oC)
Vd = 12 V
θJC Thermal Resistance
(channel to backside of carrier)
Idq = 300 mA
Pdiss = 3.6 W
148
21.7
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrie
at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
Linear Model for 1mm Unit pHEMT cell
Rdg
Cdg
Lg
Rg
Rd
Ld
Gate
Drain
+
vi
-
Cgs
Ri
Rds
Cds
Rgs
gm vi
Rp, Cp
Ls
Rs
Source
Gate
Drain
Source
Source
UPC
Source
UPC = 1mm Unit pHEMT Cell
MODEL
Vd = 8V
Vd = 8V
Vd = 8V
Vd = 10V
Vd = 10V
Vd = 12V
UNITS
PARAMETER Idq = 75mA Idq = 100mA Idq = 125mA Idq = 75mA Idq = 100mA Idq = 75mA
Rg
Rs
Rd
gm
0.45
0.14
0.45
0.14
0.45
0.14
0.45
0.17
0.450
0.160
0.450
0.303
2.74
0.45
0.19
Ω
Ω
0.41
0.43
0.46
0.41
0.410
0.286
2.72
Ω
0.310
2.39
0.318
2.58
0.314
2.70
0.296
2.61
S
Cgs
Ri
pF
1.22
1.19
1.20
1.24
1.23
1.27
Ω
pF
Ω
Cds
Rds
Cgd
0.20
0.201
152.3
0.107
6.63
0.201
158.8
0.101
6.99
0.198
171.8
0.101
7.19
0.199
173.7
0.098
7.410
0.010
0.089
0.120
35700
366000
0.196
187.9
0.096
7.79
149.1
0.115
6.29
pF
pS
Tau
Ls
0.009
0.089
0.120
33000
349000
0.009
0.089
0.120
33000
425000
0.009
0.089
0.120
35100
405000
0.009
0.089
0.120
28900
305000
0.010
0.089
0.120
24400
238000
nH
nH
Lg
Ld
nH
Rgs
Rgd
Ω
Ω
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
Linear Model for 4mm pHEMT
L - via = 0.0135 nH (5x)
4
5
UPC
Gate Pads (4x)
Drain Pads (4x)
3
6
UPC
7
2
UPC
8
1
UPC
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
Unmatched S-parameter for 4mm pHEMT
Bias Conditions: Vd=12V, Idq=300mA
Frequency s11
(GHz) dB
s11 ang
deg
s21
dB
s21 ang
deg
s12
dB
s12 ang
deg
s22
dB
s22 ang
deg
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
-0.365
-0.379
-0.380
-0.379
-0.377
-0.374
-0.370
-0.366
-0.362
-0.358
-0.353
-0.348
-0.343
-0.337
-0.332
-0.327
-0.321
-0.316
-0.311
-0.306
-0.301
-0.296
-0.291
-0.286
-0.282
-0.277
-0.273
-0.269
-0.265
-0.261
-0.258
-0.254
-0.251
-0.248
-0.245
-0.242
-0.239
-0.237
-0.234
-0.232
-0.230
-0.228
-0.226
-0.224
-0.222
-0.220
-0.218
-0.217
-0.216
-0.214
-0.213
-0.212
-146.77
23.560
17.793
14.297
11.782
9.808
8.176
6.779
5.551
4.452
3.454
2.537
1.686
0.891
103.23
-35.222
15.89
7.33
4.06
2.20
0.95
-6.160
-5.842
-5.709
-5.581
-5.439
-5.280
-5.108
-4.925
-4.735
-4.541
-4.346
-4.152
-3.962
-3.776
-3.596
-3.423
-3.258
-3.099
-2.948
-2.805
-2.669
-2.541
-2.419
-2.304
-2.196
-2.093
-1.997
-1.906
-1.820
-1.738
-1.662
-1.590
-1.521
-1.457
-1.396
-1.338
-1.283
-1.231
-1.182
-1.135
-1.091
-1.049
-1.009
-0.971
-0.934
-0.900
-0.867
-0.836
-0.806
-0.777
-0.750
-0.724
-161.81
-163.15
-168.86
-171.78
-173.57
-174.80
-175.70
-176.41
-176.98
-177.46
-177.87
-178.24
-178.56
-178.86
-179.14
-179.40
-179.64
-179.88
179.90
179.68
179.48
179.27
179.07
178.88
178.69
178.50
178.32
178.13
177.95
177.77
177.60
177.42
177.25
177.08
176.91
176.74
176.57
176.40
176.24
176.07
175.91
175.74
175.58
175.42
175.26
175.10
174.94
174.78
174.62
174.46
174.31
174.15
91.99
86.04
81.48
77.50
73.84
70.36
67.03
63.81
60.68
57.64
54.67
51.78
48.96
46.21
43.53
40.92
38.36
35.87
33.45
31.08
28.77
26.51
24.31
22.16
20.07
18.02
16.02
14.07
12.16
10.29
8.47
-34.982
-34.977
-35.024
-35.099
-35.194
-35.308
-35.437
-35.581
-35.739
-35.908
-36.087
-36.275
-36.469
-36.668
-36.870
-37.073
-37.274
-37.473
-37.667
-37.856
-38.039
-38.212
-38.373
-38.516
-38.638
-38.733
-38.801
-38.839
-38.849
-38.830
-38.784
-38.712
-38.616
-38.498
-38.361
-38.207
-38.037
-37.855
-37.661
-37.458
-37.248
-37.032
-36.812
-36.588
-36.362
-36.135
-35.908
-35.682
-35.460
-35.242
-35.032
-168.07
-169.15
-168.96
-168.34
-167.59
-166.83
-166.13
-165.51
-165.01
-164.61
-164.31
-164.12
-164.02
-164.01
-164.07
-164.19
-164.38
-164.62
-164.90
-165.21
-165.56
-165.94
-166.33
-166.75
-167.18
-167.62
-168.07
-168.53
-168.99
-169.45
-169.92
-170.39
-170.86
-171.33
-171.79
-172.26
-172.72
-173.18
-173.63
-174.08
-174.53
-174.97
-175.41
-175.85
-176.28
-176.71
-177.13
-177.55
-177.97
-178.38
-178.79
0.03
-0.66
-1.16
-1.51
-1.72
-1.78
-1.70
-1.48
-1.12
-0.61
0.05
0.85
1.80
2.89
4.12
5.50
7.02
8.69
10.53
12.52
14.65
16.90
19.23
21.61
24.03
26.44
28.84
31.19
33.48
35.70
37.83
39.87
41.81
43.65
45.38
47.01
48.53
49.95
51.26
52.47
53.59
54.61
55.53
56.35
57.08
57.72
58.28
0.142
-0.566
-1.238
-1.880
-2.493
-3.082
-3.648
-4.193
-4.720
-5.229
-5.722
-6.200
-6.664
-7.114
-7.552
-7.979
-8.395
-8.800
-9.195
-9.581
-9.958
-10.328
-10.689
-11.043
-11.390
-11.730
-12.064
-12.392
-12.715
-13.032
-13.345
-13.653
-13.957
-14.256
-14.552
-14.844
-15.133
-15.418
-15.701
6.68
4.93
3.22
1.54
-0.11
-1.72
-3.31
-4.87
-6.39
-7.90
-9.37
-10.83
-12.25
-13.66
-15.05
-16.41
-17.76
-19.09
-20.40
-21.70
24.5
25
25.5
26
Note: The s-parameters are calculated by connecting nodes 1-4 together, and nodes
5-8 together to form a 2-port network.
6
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use flux
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 °C.
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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