TGP1439_15 [TRIQUINT]
18 - 20 GHz 5-Bit Phase Shifter;
| 型号： | TGP1439_15 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 18 - 20 GHz 5-Bit Phase Shifter |
| 文件： | 总5页 (文件大小：2304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Data Sheet
August 5, 2008
18 - 20 GHz 5-Bit Phase Shifter
TGP1439
Key Features and Performance
•
•
•
•
•
•
0.5um pHEMT Technology
18-20 GHz Frequency Range
3º Typical RMS Phase Shift Error
-5 dB Typical Insertion Loss
Control Voltage: -2.5 V to -5.0 V
Compact 1.27 mm2 Die Area
The TriQuint TGP1439 is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.
Primary Applications
•
•
Phased Arrays
Satellite Communication Systems
The 5-bit design utilizes a compact topology that
achieves a 1.27 mm2 die area, high performance and
good tolerance to control voltage variation
TGP1439 Typical RF Performance (Fixtured)
12
9
The TGP1439 provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.
6
3
0
-3
-6
-9
-12
The TGP1439 requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
18 GHz
19 GHz
20 GHz
0
4
8
12 16 20 24 28
Phase State
TGP1439 Typical RF Performance (Fixtured)
TGP1439 Typical RF Performance (Fixtured)
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
40
35
30
25
20
15
10
5
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Insertion Loss
Input
Output
0
-5
-10
Phase Error
17
18
19
20
21
17
18
19
20
21
Frequency (GHz)
Frequency (GHz)
Note: Datasheet is subject to change without notice.
1
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGP1439
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol Parameter
Value
Notes
V-
Control Voltage
-8 V
I+
Control Current
Power Dissipation
1 mA
0.1 W
3/
PD
PIN
TCH
TM
TSTG
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
20 dBm
150 °C
320 °C
-65 °C to 150 °C
1/, 2/
1/
2/
These ratings apply to each individual FET
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Total current for the entire MMIC
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C 5°C)
Symbol Parameter
Test Condition
Limit
Units
dB
Vctnl=0V / -2.5V
Min Nom Max
-5.5 -4.6 -4.0
IL
Insertion Loss F = 18, 19, 20 GHz
States 0 and 31
IRL
ORL
PS
Input Return
Loss
F = 18, 19, 20 GHz
States 0 and 31
-16
-14
-11
dB
Output Return F = 18, 19, 20 GHz
-10
dB
Loss
States 0 and 31
F = 18, 19, 20 GHz
State 31
Phase Shift
342 344 350
deg
1200
1000
800
600
400
200
0
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz Reference State Insertion Loss (dB)
2
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGP1439
1400
1200
1000
800
600
400
200
0
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz State 31 Insertion Loss (dB)
800
700
600
500
400
300
200
100
0
340 341 342 343 344 345 346 347 348 349 350
19 GHz State 31 Phase Shift (deg)
Typical Fixtured Performance Over the 18-20 GHz Band
Parameter
Unit
dB
dB
dBpp
dB
deg
deg
dB/°C
dB
-5.0 V
-4.9
0.3
-2.5 V
-5.0
0.6
Mean Insertion Loss
Mean Loss Flatness
Peak Amplitude Error
RMS Amplitude Error
Peak Phase Shift Error
RMS Phase Shift Error
Loss Temp. Variation
Ave Input Return Loss
Ave Output Return Loss
1.2
1.3
0.25
-3 / +7
3.0
0.30
-3 / +7
2.7
-0.0048
-0.0052
-16
-15
-15
-15
dB
3
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGP1439
Mechanical Characteristics
0.750
6
10
8
4
0.354
0.354
0.000
1
2
5
9
7
11
3
Units: millimeters
Thickness: 0.1016
Chip size tolerance: +/- 0.0508
Vcntl = -5.0 V to -2.5 V
Passive device, RF IN and RF OUT designators for reference only
Bond Pad #1
Bond Pad #2
Bond Pad #3
Bond Pad #4
Bond Pad #5
Bond Pad #6
Bond Pad #7
Bond Pad #8
Bond Pad #9
Bond Pad #10
Bond Pad #11
(RF IN)
0.100 x 0.150
0.100 x 0.150
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
0.100 x 0.100
(RF OUT)
(180º Bit ON: V= Vcntl)
(180º Bit ON: V= 0.0V)
(90º Bit ON: V= Vcntl)
(90º Bit ON: V= 0.0V)
(45º Bit ON: V= Vcntl)
(45º Bit ON: V= 0.0V)
(22.5º Bit ON: V= Vcntl)
(22.5º Bit ON: V= 0.0V)
(11.25º Bit ON: V= Vcntl)
Note: To turn phase bits off, apply the opposite condition. For example to
turn Phase bit 180° OFF, Bond Pad 3 = 0.0V and Bond Pad 4 = Vcntl.
4
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGP1439
Recommend 500Ω
series resistance
on the control lines
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
•=
•=
•=
•=
•=
AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•=
•=
•=
•=
•=
•=
•=
vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•=
•=
thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
•= aluminum wire should not be used
•=
•=
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
5
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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