2SD1802R(TO-251) [TRSYS]
Transistor;
| 型号： | 2SD1802R(TO-251) |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-251/TO-252-2Plastic-Encapsulated Transistors
6. 50¡ À0. 10
5. 30¡ À0. 05
2. 30¡ À0. 05
0. 51¡ À0. 03
TO-251
TO-252-2
2SD1802 TRANSISTOR (NPN)
5¡
ã
5¡ ã
0. 80¡ À0. 05
FEATURES
0. 60¡ À0. 05
Power dissipation
1. BASE
2. 30¡ À0. 05
2. 30¡ À0. 05
1. 20
0. 51¡ À0. 03
1 2 3
PCM:
1
3
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
6. 50¡ À0. 15
2. 30¡ À0. 10
5. 30¡ À0. 10
0. 51¡ À0. 05
Collector current
ICM:
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
A
5¡
ã
5¡
ã
Collector-base voltage
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
2. 30¡ À0. 10
0¡
ã
9«¡
¡
ã
V(BR)CBO
:
60
V
0. 51
1 2 3
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=10µAµ, IE=0
Ic=1mA, IB=0
MIN
60
50
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=10µA, IC=0
µA
µA
VCB=40V, IE=0
1
1
IEBO
Emitter cut-off current
VEB=4V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
V
CE=2V, IC=100mA
100
35
560
DC current gain
VCE=2V, IC=3A
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
CB=10V, IE=0,f=1MHz
0.5
1.2
MHz
pF
150
25
Cob
Collector output capacitance
Turn-off time
V
ton
70
Vcc=25V, Ic=1A
IB1=-IB2=0.1A
nS
tf
650
35
Fall time
ts
Storage time
CLASSIFICATION OF hFE(1)
R
S
T
U
Rank
100-200
140-280
200-400
280-560
Range
Marking
Typical Characteristics
2SD1802
相关型号：
2SD1802RTP-FA
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
ONSEMI
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