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元器件品牌
IRF830
[TRSYS]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
元器件型号：
IRF830
生产厂家：
TRANSYS Electronics Limited
描述和应用：
N-CHANNEL ENHANCEMENT MODE
N沟道增强模式
晶体 晶体管 局域网
PDF文件：
总3页 (文件大小：275K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF830参数
查看货源
IRF830/D
Power Field Effect Transistor
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156
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238
ETC
IRF830-005
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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156
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20
VISHAY
IRF83016
4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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156
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20
MOTOROLA
IRF83016
4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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19
MOTOROLA
IRF8301MPBF
Ultra-low Package Inductance
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156
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4
IRF
IRF8301MPBF_15
Ultra-low Package Inductance
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156
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2
IRF
IRF8301MTRPBF
DirectFETPower MOSFET
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156
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1
IRF
IRF8302MPBF
Dual Sided Cooling Compatible
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156
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1
IRF
IRF8302MPBF_15
Dual Sided Cooling Compatible
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156
-
1
IRF
IRF8302MTRPBF
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
Warning
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9
INFINEON
IRF8304MPBF
Ultra Low Package Inductance
Warning
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156
-
1
IRF
IRF8304MPBF_15
Ultra Low Package Inductance
Warning
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156
-
1
IRF
IRF8304MTRPBF
Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
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156
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11
INFINEON
IRF8306MPBF
Integrated Monolithic Schottky Diode
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156
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1
IRF
IRF8306MPBF
HEXFET Power MOSFET plus Schottky Diode
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156
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2
IRF
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