MPSA43 [TRSYS]
NPN EPITAXIAL PLANAR SILICON TRANSISTORS; NPN外延平面硅晶体管
| 型号： | MPSA43 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
MPSA 42
MPSA 43
TO-92
CBE
C
B
E
High Voltage Transistors.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
MPSA42 MPSA43
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25 degC
Derate above 25 deg C
Power Dissipation @ Tc=25 degC
Derate above 25 deg C
VCEO
VCBO
VEBO
IC
300
300
200
200
V
V
V
mA
mW
6
500
625
5
1.5
12
PD
mW./deg C
W
mW./deg C
deg C
PD
-55 to +150
Operating And Storage Junction
Temperature Range
Tj, Tstg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
83.3
200
Rth(j-c)
Rth(j-a)
deg C/W
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MPSA42
MPSA43
>200
>200
>6.0
-
<100
-
<100
>25
>40
>40
<0.4
<0.9
UNIT
V
V
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=1mA,IB=0
>300
>300
>6.0
<100
-
IC=100uA.IE=0
IE=100uA, IC=0
VCB=200V, IE=0
VCB=160V, IE=0
VEB=6V, IC=0
V
nA
nA
nA
nA
Emitter-Cut off Current
DC Current Gain
IEBO
hFE*
<100
-
VEB=4V, IC=0
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=30mA,VCE=10V
>25
>40
>40
<0.5
<0.9
Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA
Base Emitter Saturation Voltage
V
V
VBE(Sat) * IC=20mA,IB=2mA
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
.
ft
IC=10mA, VCE=20V
f=100MHz
>50
>50
MHz
pF
Collector Base Capacitance
Ccb
VCB=20V, IE=0
f=1MHz
<3.0
<4,0
*Pulse Test: Pulse Width=300us, Duty Cycle=2%
TO-92 Plastic Package
B
TO-92 Transistors on Tape and Ammo Pack
Ammo Pack Style
MECHANICAL DATA
Adhesive Tape on Top Side
Carrier
Strip
P
(p)
T
h
h
FLAT SIDE
A 1
LABEL
3 2 1
8.2"
A
H 1
W 2
H 0
W o
L
W 1
W
t1
F1
F2
t
D o
F
Flat Side of Transistor and
P 2
Adhesive Tape Visible
2000 pcs./Ammo Pack
D
P o
All dimensions in mm unless specified otherwise
1
2
SPEC IFICATION
3
ITEM
REMARKS
SYMBOL
D
MIN. NOM. MAX. TOL .
A
A
BOD Y W IDTH
BOD Y H EIGHT
BOD Y THICKNESS
PITCH OF C OMPONENT
FEED HOLE PITCH
4.0
4.8
3.9
4.8
5.2
4.2
A1
A
T
P
Po
SEC AA
G
12.7
12.7
1
0.3 CUMU LATIVE PITCH
ERROR 1.0 mm/20
PITCH
DIM
MIN.
MAX.
FEED HOLE CENTRE TO
COMPONENT CENTRE
F
F
6.35
P2
0.4 TO BE MEASU RED AT
BOTTOM OF CLIN CH
A
B
C
D
E
F
4.32
4.45
3.18
0.41
0.35
5.33
5.20
4.19
0.55
0.50
DISTAN CE BETW EEN OUTER
LEADS
COMPONENT ALIGN MEN T
TAPE W IDTH
+0.6
-0.2
5.08
0
18
6
F
h
W
Wo
W 1
1
AT TOP OF BODY
3 2 1
0.5
0.2
+0.7
-0.5
HOLD-DOW N TAPE W IDTH
HOLE POSITION
9
0.5
16
HOLD-DOW N TAPE POSITION
LEAD W IRE C LINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
W 2
Ho
H1
L
Do
t
0.2
0.5
23.25
11.0
5 DEG
1.14
4
0.2
PIN CONFIGURATION
1. COLLECTOR
2. BASE
G
H
K
1.40
1.53
—
1.2
3
TOTAL TAPE THIC KNESS
t1 0.3 - 0.6
2.54
LEAD - TO - LEAD DISTANCEF1,
F2
+0.4
-0.1
1.14
CLINC H HEIGHT
PULL - OUT FOR CE
H2
(P)
12.70
3. EMITTER
6N
NOTES
1. M AX IM UM A LIGN M EN T D EV IAT ION BE TW E EN LEAD S N O T TO BE G R EATER TH AN 0.2 m m .
2. M AX IM UM N O N-C U M ULATIVE VAR IATIO N B ETW E EN TA PE FEE D H OLE S S HA LL NO T E XC EED 1 m m IN 20
PIT CH ES .
3. H OLD DO W N TAP E N OT TO E XC EED BE YO ND TH E E DG E(S) O F C AR RIE R TAP E AN D THE RE SH ALL BE NO
EX PO SU R E O F AD HE SIV E.
4. N O M O R E TH AN
5. TAP E TR AILE R, H AVIN G AT LE AS T TH RE E FE ED HO LES AR E R EQ UIR ED AF TER THE LAS T CO M PO N EN T.
6. SP LICE S S HA LL NO T IN TER FER E W ITH T HE SPR O CK ET F EED H OLE S.
3 CO N SE CU TIVE M ISS IN G CO M P ON EN TS ARE PE RM ITT ED .
A
Packing Detail
PACKAGE
STANDARD PACK
INNER CARTON BOX
OUTER CARTON BOX
Details
Net Weight/Qty
Size
Qty
Size
Qty
Gr Wt
TO-92 Bulk
TO-92 T&A
1K/polybag
2K/ammo box
200 gm/1K pcs
645 gm/2K pcs
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
5.0K
2.0K
17" x 15" x 13.5"
17" x 15" x 13.5"
80.0K
32.0K
23 kgs
12.5 kgs
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