SB157/106C015-20-W-AG/AL [TRSYS]
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF.; 肖特基势垒CR二极管晶圆157 ×106密耳， 15伏， 20安培， 0.37VF 。
| 型号： | SB157/106C015-20-W-AG/AL |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. |
| 文件： | 总1页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB157/106C015-20-W-Ag/Al
Schottky cr Barrier Diode Wafer
157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF.
Data Sheet
Cr-Al-Ni-Ag - Suffix "Ag"
or Cr-Al (Suffix Al).
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Anode
Cathode
Chromium Barrier
>1000V ESD (MM)
Ti-Ni-Ag
Symbol
Electrical Characteristics @ 25 C
Symbol Unit
SB157/106C015-20-W-Ag/Al (See ordering code below)
VRRM
VF
IF(AV)
Volt
Maximum Repetitive Reverse Voltage (2)
Maximum Forward Voltage @ IF = 20A (1)(2)
15
0.37
20
Volt
Amp
Typical Average Forward Rectified Current (2)
Reverse Leakage Current @ VR = 15V (2)
IR(1)
IR(2)
VESD(mm)
TJ
mA
mA
Volt
C
15
500
O
Reverse Leakage Current @ VR = 15V, 125 C (2)
>1000
ESD Machine Model (MM)
Junction Operating Temperature Range (2)
-45 to +125
TSG
Storage Temperature Range (2)
-45 to +125
C
(1) Pulse Width tp = < 300µS, Duty Cycle <2%
Ordering Code
SB065C040-3-W-Ag
e.g.
(2) The characteristics above assume the die are assembled in
industry standard packages using appropriate attach methods.
Schottky Barrier 65 Mils CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Mechanical Dimensions
Die
Wafer
99
106
(2.520)
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag")
or Cr-Al (Suffix Al).
(2.700)
Bottom (cathode) Ti/Ni/Ag
Scribe line Width 80 µM
157
(4.000)
150
(3.820)
420 +/- 20 µm
Dimensions in mils (mm)
Third Angle Protection
The information in this datasheet does not form part of any contract, quotation
SCD0972-1
guarantee,warranty or representation, it has been produced in good faith and is believed
to be accurate and may be changed without notice at anytime. Liability will not be
accepted by Transys Electronics LTD for any consequences whatsoever in its use. This
publication does not convey nor imply any license under patent or other
Transys Electronics LTD
Email: sales@transyselectronics.com
Website: www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
intellectual/industrial property rights. The products within this specification are not
designed for use in any life support apparatus whatsoever where malfunction can be
reasonably expected to cause personal injury or death. Customers using these products
in the aforementioned applications do so at their own risk and agree to fully indemnify
Transys Electronics LTD for any damage/ legal fees either direct, incidental or
consequential from this improper use or sale.
Fax: + 44 (0) 121 776 6997
Page 1 of 1
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Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF.
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