TIP31 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管
| 型号： | TIP31 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-220 Plastic-Encapsulated Transistors
TIP31/31A/31B/31C TRANSISTOR (NPN)
FEATURES
TO-220
Power dissipation
1. BASE
PCM:
2
3
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
Collector current
ICM:
A
Collector-base voltage
V(BR)CBO
1 2 3
:
TIP31: 40
TIP31A: 60
TIP31B: 80
V
V
V
TIP31C: 100 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
40
60
31
Collector-base breakdown voltage
31A
31B
31C
31
V(BR)CBO
Ic= 100 µA, IE=0
V
80
100
40
60
Collector-emitter breakdown voltage
31A
31B
31C
V(BR)CEO
V(BR)EBO
ICBO
Ic= 30 mA, IB=0
IE= 100µA, IC=0
V
V
80
100
5
Emitter-base breakdown voltage
Collector cut-off current
VCB= 40V, IE=0
VCB= 60V, IE=0
VCB= 80V, IE=0
VCB= 100V, IE=0
31
31A
31B
31C
0.2
mA
VCE= 30V , IB= 0
0.3
0.3
Collector cut-off curremt
31/31A
31B/31C
ICEO
mA
mA
VCE= 60V , IB= 0
IEBO
VEB=5V, IC=0
1
Emitter cut-off current
DC current gain
hFE(1)
VCE= 4V, IC= 3A
VCE= 4V, IC= 1A
10
25
50
hFE(2)
VCE(sat)
VBE(on)
fT
IC=3A, IB=375mA
VCE= 4V, IC=3A
1.2
1.8
V
V
Collector-emitter saturation voltage
Base-emitter
voltage
VCE=10V , IC=500mA
3
MHZ
Transition frequency
相关型号：
TIP31-6200
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CDIL
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