5KSMC13AH [TSC]
5000W, 10V- 40V Surface Mount Transient Voltage Suppressor;
| 型号： | 5KSMC13AH |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 5000W, 10V- 40V Surface Mount Transient Voltage Suppressor |
| 文件： | 总5页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5KSMC10AH – 5KSMC40AH
Taiwan Semiconductor
5000W, 10V- 40V Surface Mount Transient Voltage Suppressor
FEATURES
● AEC-Q101 qualified
● Moisture sensitivity level: level 1, per J-STD-020
● Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4)
● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b)
● RoHS Compliant
KEY PARAMETERS
PARAMETER
VALUE
10 - 40
12 - 47
5000
UNIT
V
VWM
VBR
V
PPPM
W
● Halogen-free according to IEC 61249-2-21
TJ MAX
Polarity
Package
175
°C
Uni-directional
APPLICATIONS
● Switching mode power supply (SMPS)
DO-214AB (SMC)
● Motor for BLDC
● Lighting application
● Battery Management System
● Automotive
MECHANICAL DATA
● Case: DO-214AB (SMC)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Indicated by cathode band
● Weight: 0.244g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
PPPM
5000
W
10/1000µs waveform(1)
Steady state power dissipation at TL = 25°C(2)
Peak forward surge current 8.3ms single half sine-wave
Junction temperature
PD
IFSM
TJ
12.5
350
W
A
-55 to +175
-55 to +175
°C
°C
Storage temperature
TSTG
Notes:
1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.1
2. Units mounted on PCB (16mm x 16mm Cu pad test board)
1
Version: A2012
5KSMC10AH – 5KSMC40AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJL
TYP
12
UNIT
°C/W
°C/W
°C/W
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
RӨJA
48
RӨJC
9
Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
VC at IPPM
RD
(1)
VBR at IT
10 / 1000 µs
αT(2)
10 / 1000 µs
IR max at VWM
Part number Marking code
Min Typ Max
IT
Max
V(3)
Max
µA
V
V
mA
A(4)
Ω
10-4/°C
5KSMC10AH
5KSMC13AH
5KSMC15AH
5KSMC16AH
5KSMC18AH
5KSMC20AH
5KSMC22AH
5KSMC24AH
5KSMC26AH
5KSMC28AH
5KSMC30AH
5KSMC33AH
5KSMC36AH
5K10A
5K13A
5K15A
5K16A
5K18A
5K20A
5K22A
5K24A
5K26A
5K28A
5K30A
5K33A
5K36A
5K40A
5
3
3
3
3
3
3
3
3
3
3
3
3
3
10
13
15
16
18
20
22
24
26
28
30
33
36
40
11.4 12.0 12.6
14.3 15.0 15.8
16.7 17.6 18.5
17.8 18.7 19.6
1
1
1
1
1
1
1
1
1
1
1
1
1
1
17.0
21.5
24.4
26.0
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
294.1
232.6
204.9
192.3
171.2
154.3
140.8
128.5
118.8
110.1
103.3
93.8
0.017
0.028
0.033
0.038
0.047
0.058
0.070
0.084
0.098
0.115
0.129
0.157
0.186
0.229
7.8
8.4
8.8
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10.0
10.0
10.1
20
21.1 22.2
22.2 23.4 24.6
24.4 25.7 27.0
26.7 28.1 29.5
28.9 30.4 31.9
31.1 32.7 34.3
33.3 35.1 36.9
36.7 38.6 40.5
40.0 42.1 44.2
44.4 46.7 49.0
86.0
5KSMC40AH
77.5
Notes:
1. Pulse test: tp < 30ms
2. To calculate VBR or VC versus junction temperature, use following formulas:
VBR at TJ = VBR at 25°C x (1 + αT x (TJ-25))
VC at TJ = VC at 25°C x (1 + αT x (TJ-25))
3. To calculate maximum clamping voltage at other surge level, use the following formula:
VCmax = VC - RD x (IPP – IPPappli) where IPPappli is the surge current in the application.
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
5KSMCxAH
DO-214AB (SMC)
3,000 / Tape & Reel
Notes:
1. “x” defines voltage from 10V (5KSMC10AH) to 40V (5KSMC40AH)
2
Version: A2012
5KSMC10AH – 5KSMC40AH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Pulse Power or Current vs. Initial Junction
Temperature
Fig.2 Steady State Power Derating
100
75
50
25
0
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
LEAD TEMPERATURE (°C)
TJ - JUNCTION TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Typical Junction Capacitance
160
140
120
100
80
100
10
1
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
Peak value IPPM
10AH
30AH
Rise time tr=10μs to 100% of IPPM
Half value-IPPM/2
10/1000μs waveform
60
40AH
40
f=1.0MHz
Vsig=50mVp-p
td
20
0.1
0
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
t – time (ms)
REVERSE VOLTAGE (V)
Fig.5 Typical Transient Thermal Impedance
Fig.6 Peak Pulse Power Rating Cure
100
10000
10
1
1000
100
10
RTHJL
0.1
1
0.01
0.1
0.001
0.0000010.00001 0.0001 0.001
0.01
0.1
1
10
100
1
10
100
1000
10000
PULSE DURATION (s)
tp, PULSE WIDTH (µs)
3
Version: A2012
5KSMC10AH – 5KSMC40AH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
G
= Marking Code
= Green Compound
= Date Code
YW
F
= Factory Code
4
Version: A2012
5KSMC10AH – 5KSMC40AH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version: A2012
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