B0540W [TSC]
410mW, Low VF SMD Schottky Barrier Diode; 410mW ，低VF SMD肖特基势垒二极管
| 型号： | B0540W |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 410mW, Low VF SMD Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0520LW,B0530W,B0540W
410mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
SOD-123
B
A
C
Features
Low power loss, high current capability, low VF
Surface device type mounting
D
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
E
F
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
G
Unit (mm)
Unit (inch)
Min Max
0.059 0.067
Dimensions
Min
1.50
3.55
0.45
2.60
1.05
0.08
Max
Mechanical Data
Case : SOD-123 small outline plastic package
A
B
C
D
E
F
1.70
3.85 0.140 0.152
0.65 0.018 0.026
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
2.80
1.25
0.15
0.102 0.11
0.041 0.049
0.003 0.006
0.50 REF
Weight :0.01 gram (approximately)
G
0.02 REF
Ordering Information
Part No.
Packing
Package
SOD-123
B05xxW RH
3 Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
B0520LW
B0530W
B0540W
Units
Power Dissipation
410
30
mW
V
Repetitive Peak Reverse Voltage
Reverse Voltage
VRRM
VR
20
14
40
28
21
V
Repetitive Peak Forward Current
Mean Forward Current
IFRM
500
mA
mA
A
IO
500
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
IFSM
5.5
RθJA
TJ, TSTG
244
°C/W
°C
-65 to + 125
Electrical Characteristics
Type Number
Symbol
B0520LW
B0530W
B0540W
Units
20
-
-
IR= 250μA
Reverse Breakdown Voltage
V(BR)
-
30
-
V
IR= 130μA
IR= 20μA
-
-
40
I =
0.300
0.375
-
100mA Tj=25°C
500mA Tj=25°C
1000mA Tj=25°C
100mA Tj=100°C
500mA Tj=100°C
1000mA Tj=100°C
F
I =
F
0.385
0.430
0.510
I =
F
-
-
0.620
Forward Voltage
VF
V
I =
F
0.220
-
-
I =
F
0.330
-
0.460
I =
F
-
75
-
-
0.610
-
-
-
VR= 10V
VR= 15V
VR= 20V
VR= 30V
VR= 40V
VR= 10V
VR= 20V
VR= 40V
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=100°C
Tj=100°C
Tj=100°C
20
250
-
-
10
-
μA
130
Reverse Leakage Current
Junction Capacitance
IR
-
-
20
-
5,0
8.0
-
-
-
-
5.0
13
mA
pF
VR=0V, f=1.0MHz
CJ
170
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : C09
B0520LW,B0530W,B0540W
410mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Forward Current Derating Curve
FIG 1 Typical Forward Characteristics
10
1
B0520LW
B0540W
0.75
0.5
0.25
0
1
B0530W
0.1
Tj=25°C
Pluse Width =300us
2% duty cycle
0.01
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Terminal Temperature (°C)
Instantaneous Forward Volatge (V)
FIG 3 Admissible Power Dissipation Curve
FIG 4 Typical Junction Capacitance
500
400
300
200
100
0
1000
100
10
1
0
25
50
75
100
125
150
0
5
10
15
20
25
Reverse Volatge (V)
Ambient Temperature (°C)
Version : C09
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