BAS70 [TSC]
200m Watts Surface Mount Schottky Barrier Diode; 200米瓦表面贴装肖特基二极管
| 型号： | BAS70 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 200m Watts Surface Mount Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS70 / -04 / -05 / -06
200m Watts Surface Mount Schottky Barrier Diode
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
Features
ꢀ
ꢀ
ꢀ
Low turn-on voltage
Fast switching
PN junction guard Ring for transient and ESD
protection
0.041(1.05)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.047(0.89)
0.120(3.05)
0.104(2.65)
Mechanical Data
0.043(1.10)
0.035(0.89)
ꢀ
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Marking & Polarity: See diagram
Weight: 0.008 grams
ꢀ
0.007(0.178)
0.003(0.076)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
ꢀ
ꢀ
Dimensions in inches and (millimeters)
BAS70Marking:73
BAS70-04Marking:74
BAS70-05Marking:75
BAS70-06Marking:76
Maximum Ratings TA=25 oC unless otherwise specified
Type Number
Symbol
BAS70
Units
V
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
70
V
VR
RMS Reverse Voltage
V
R(RMS)
49
70
V
mA
Forward Continuous Current (Note 1)
IF
Non-Repetitive Peak Forward Surge Current
100
200
625
mA
mW
K/W
oC
oC
IFSM
@ t ≦1.0s
Power Dissipation (Note 1)
Pd
Thermal Resistance Junction to Ambient Air
(Note 1)
R
θJA
Operating Junction Temperature Range
Storage Temperature Range
-55 to + 125
-65 to + 150
TJ
TSTG
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
Reverse Breakdown Voltage (Note 2), IR=10uA
70
V
(BR)
_
Reverse Leakage Current tp<300us, VR=50V
100
410
1000
2.0
nA
IR
Forward Voltage Drop
tp=300us, IF=1.0mA
tp<300us, IF=15mA
_
mV
V
F
_
_
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 3)
pF
nS
Cj
trr
5.0
Notes:
1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Test Period < 3000uS.
3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω.
Version: C07
RATINGS AND CHARACTERISTIC CURVES (BAS70 / -04 / -05 / -06)
FIG.2- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER LEG
FIG.1- POWER DERATING CURVE
100
50
0
8.3ms Single Half Sine Wave
(JEDEC Method)
200
100
0
1
2
5
10
20
50
100
0
25
50
75
100
125
NUMBER OF CYCLES AT 60Hz
TA, AMBIENT TEMPERATURE ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
10
1
10000
1000
100
10
T
= 1250C
A
T
= 1250C
A
T
= 750C
A
T
= 750C
A
T
= 250C
A
T
= 250C
A
T
= 00C
A
T
A
= 00C
T
= -400C
A
= -400C
1
T
A
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE. (V)
0
10
20
30
40
50
60
70
V
, REVERSE VOLTAGE. (V)
R
FIG.5- TYPICAL TOTAL CAPACITANCE VS
REVERSE VOLTAGE
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10
1
f = 1.0MHz
2.0
1.0
0
0.1
0.01
0.1
1
0
5
10
15
20
10
100
PULSE DURATION. (sec)
REVERSE VOLTAGE
Version: C07
相关型号：
BAS70-
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
INFINEON
©2020 ICPDF网 联系我们和版权申明