BC807-25 [TSC]
0.3 Watts PNP Plastic-Encapsulate Transistors; 0.3瓦PNP塑封装晶体管
| 型号： | BC807-25 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 0.3 Watts PNP Plastic-Encapsulate Transistors |
| 文件： | 总2页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807-16
BC807-25
BC807-40
RoHS
Pb
COMPLIANCE
0.3 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifier
applications
Complementary NPN type available(BC817)
Qualified to AEC-Q101 standards for high
reliability
Mechanical Data
Case: SOT-23, Molded plastic
Case material: molded plastic. UL flammability
classification rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Method 208
Lead free plating
Marking: -16:5A, -25: 5B, -40: 5C
Weight: 0.008 grams(approximate)
Dimensions in inches and (millimeters)
Maximum Ratings T =25 oC unless otherwise specified
A
BC807 BC807 BC807
Type Number
Symbol
Units
-16
-25
-50
-40
Collector-base breakdown voltage
IC=-10uA, IE=0
VCBO
VCEO
IC
V
V
A
Collector-emitter breakdown voltage IC=-10mA, IB=0
Collector current - continuous
-45
-0.5
Power dissipation
PC
0.3
-5
-0.1
-0.2
-0.1
-0.7
-1.2
100
W
V
uA
uA
uA
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IE=-1uA, IC=0
VCB=-45V IE=0
VCE=-40V IB=0
VEB=-4V IC=0
VEBO
ICBO
ICEO
IEBO
Collector-emitter saturation voltage IC=-500mA, IB=-50mA
Base-emitter saturation voltage IC=-500mA, IB=-50mA
VCE(sat)
VBE(sat)
fT
V
Transition frequency VCE=-5V IC=-10mA f=100MHz
Operating and Storage Temperature Range
MHz
-55 to + 150
oC
TJ, TSTG
Type Number
DC current gain
Symbol
HFE(1)
Min
Max
Units
807-16
807-25
807-40
100
160
250
250
400
600
VCE=-1V IC=-100mA
Version: B07
RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40)
FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR
CURRENT
FIG.1- POWER DERATING CURVE
400
300
200
100
0
= 25OC
1000
SEE NNOOTTEE11
T
A
f = 20MHz
-V = 5.0V
CE
1V
100
10
0
50
100
150
200
1
10
100
1000
TSB, SUBSTRATE TEMPERATURE ( C)
- IC, COLLECTOR CURRENT (mA)
FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT
FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT
1000
100
10
1000
- V = 1V
CE
1500C
250C
-50O
C
-500C
25O
C
TYPICAL
LIMITS
100
at TA = 25OC
150O
C
-
IC / -IB = 10
1
0.1
10
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
- VCESAT, COLLECTOR SATURATION VOLTAGE (V)
- IC, COLLECTOR CURRENT (mA)
FIG.5- TYPICAL EMITTER-COLLECTOR
CHARACTERISTICS
FIG.6- TYPICAL EMITTER-COLLECTOR
CHARACTERISTICS
500
400
300
200
100
0
100
80
60
40
20
0
3.2
2.8
0.4
2.4
2.0
0.35
0.3
1.8
1.6
0.25
1.4
1.2
0.2
1.0
0.8
0.15
0.6
0.4
0.1
-IB = 0.05 mA
-IB = 0.2 mA
0
10
20
0
1
2
- VCE, COLLECTOR-EMITTER VOLTAGE (V)
- VCE, COLLECTOR-EMITTER VOLTAGE (V)
Version:B07
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