BC817-16 [TSC]
300mW, NPN Small Signal Transistor; 300MW， NPN小信号晶体管
| 型号： | BC817-16 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 300mW, NPN Small Signal Transistor |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
SOT-23
Collector
Emitter
Base
F
A
Features
Low power loss, high current capability, low VF
B
Surface device type mounting
E
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
C
G
D
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Min Max
0.059 0.067
Dimensions
Min
1.50
3.55
0.45
2.60
1.05
0.08
Max
1.70
Mechanical Data
Case : SOT- 23 small outline plastic package
A
B
C
D
E
F
3.85 0.140 0.152
0.65 0.018 0.026
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
2.80
1.25
0.15
0.102 0.11
0.041 0.049
0.003 0.006
0.50 REF
G
0.02 REF
Ordering Information
Part No.
Packing
Package
SOT-23
BC817-16/-25/-40 RF
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
BC817-16
BC817-25
BC817-40
Units
Power Dissipation
300
mW
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
50
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5
500
V
Collector Current
mA
°C/W
°C
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
TJ, TSTG
388
-55 to + 150
Electrical Characteristics
Type Number
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
BC817-16
BC817-25
BC817-40
Units
V
IC= 10μA
IC= 10mA
IE= 1μA
IE= 0
IB= 0
IC= 0
IE= 0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
50
45
V
5
V
VCB= 45V
0.1
μA
μA
V
V
EB= 4V
IC= 0
IEBO
Emitter Cut-offCurrent
0.1
IC= 500mA
IC= 500mA
IB= 50mA
IB= 50mA
VCE(sat)
VBE(sat)
fT
0.7
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
1.2
V
VCE= 5V IC= 10mA f= 100MHz
VR=0V, f=1.0MHz
Transition frequency
Junction Capacitance
100
10
MHz
pF
CJ
VCE= 1V
VCE= 1V
IC= 100mA
IC= 100mA
100
>40
-
600
>40
hFE
hFE
DC current gain
DC current gain
>40
160-400
100-250
250-600
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : C09
BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Collector-Emitter Saturation Voltage vs
Collector Current
FIG 1 Typical Pulsed Current Gain vs
Collector Current
10
1
10
25oC
1
25oC
0.1
0.1
0.01
0.01
VCE=5
0.001
0
100
200
300
400
500
0
0.1
0.2
0.3
0.4
0.5
0.6
hFE
VCE(sat), Collector-Emitter Voltage (V)
FIG 4 Base-Emitter on Voltage vs
Collector Current
FIG 3 Base-Emitter Saturation Voltage vs
Collector Current
1
1000
100
10
25oC
25o
0.1
0.01
0.001
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VBE(sat),Base-Emitter Voltage (V)
VBE(sat),Base-Emitter on Voltage (V)
FIG 5 Collector-Base Capacitance vs
Collector-Base Voltage
40
30
20
10
0
0
4
8
12
16
20
24
28
VCB,Collector-Base Voltage (V)
Version : C09
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