BYG20J [TSC]

1.5A, 200V - 600V High Efficient Surface Mount Rectifiers;
BYG20J
型号: BYG20J
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

1.5A, 200V - 600V High Efficient Surface Mount Rectifiers

软恢复二极管 快速软恢复二极管 光电二极管
文件: 总4页 (文件大小:377K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYG20D - BYG20J  
Taiwan Semiconductor  
CREAT BY ART  
1.5A, 200V - 600V High Efficient Surface Mount Rectifiers  
FEATURES  
- Glass passivated junction chip  
- Ideal for automated placement  
- Fast switching for high efficiency  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
DO-214AC (SMA)  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound, UL flammability classification rating 94V-0  
Part No. with suffix "H" means AEC-Q101 qualified  
Packing code with suffix "G" means green compound (halogen-free)  
Moisture sensitivity level: level 1, per J-STD-020  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: Indicated by cathode band  
Weight: 0.064 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
BYG20D  
200  
BYG20G  
400  
BYG20J  
600  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
A
VRMS  
140  
280  
420  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VDC  
200  
400  
600  
IF(AV)  
1.5  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
V
IF=1.0A  
1.3  
1.4  
1
Maximum instantaneous forward voltage  
(Note 1)  
VF  
IF=1.5A  
TJ=25°C  
TJ=100°C  
Maximum reverse current @ rated VR  
IR  
μA  
mJ  
10  
Pulse energy in avalanche mode, non repetitive  
(Inductive load switch off ), L=120mH  
ERSM  
20  
Maximum reverse recovery time (Note 2)  
Typical thermal resistance  
trr  
75  
ns  
°C/W  
°C  
RθJA  
TJ  
100  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Document Number: DS_D0000075  
Version: C15  
BYG20D - BYG20J  
Taiwan Semiconductor  
ORDERING INFORMATION  
PART NO.  
SUFFIX  
PACKING  
PACKING CODE  
SUFFIX  
PART NO.  
PACKAGE  
PACKING  
CODE  
R3  
SMA  
SMA  
1,800 / 7" Plastic reel  
7,500 / 13" Paper reel  
7,500 / 13" Plastic reel  
1,800 / 7" Plastic reel  
7,500 / 13" Paper reel  
7,500 / 13" Plastic reel  
R2  
M2  
F3  
SMA  
BYG20x  
H
G
(Note 1)  
Folded SMA  
Folded SMA  
Folded SMA  
F2  
F4  
Note 1: "x" defines voltage from 200V (BYG20D) to 600V (BYG20J)  
EXAMPLE  
PREFERRED  
PART NO.  
PART NO.  
SUFFIX  
PACKING  
CODE  
PACKING CODE  
SUFFIX  
PART NO.  
DESCRIPTION  
AEC-Q101 qualified  
Green compound  
BYG20DHR3G  
BYG20D  
H
R3  
G
RATINGS AND CHARACTERISTICS CURVES  
(TA=25°C unless otherwise noted)  
FIG. 2 TYPICAL REVERSE CHARACTERISTICS  
FIG.1 FORWARD CURRENT DERATING CURVE  
100  
10  
2
1.5  
1
1
TJ=125°C  
0.1  
RESISTIVE OR  
INDUCTIVE LOAD  
0.5  
0.01  
0.001  
TJ=25°C  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
LEAD TEMPERATURE (oC)  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG. 4 TYPICAL FORWARD CHARACTERISTICS  
10  
70  
60  
50  
40  
30  
20  
10  
0
8.3mS Single Half Sine Wave  
1
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
NUMBER OF CYCLES AT 60 Hz  
FORWARD VOLTAGE (V)  
Document Number: DS_D0000075  
Version: C15  
BYG20D - BYG20J  
Taiwan Semiconductor  
FIG. 5 TYPICAL JUNCTION CAPACITANCE  
175  
150  
125  
100  
75  
50  
25  
0
0.1  
1
10  
100  
1000  
REVERSE VOLTAGE (V)  
PACKAGE OUTLINE DIMENSIONS  
DO-214AC (SMA)  
Unit (mm)  
Min  
Unit (inch)  
DIM.  
Max  
1.58  
4.60  
2.83  
2.50  
1.41  
5.33  
0.20  
0.31  
Min  
Max  
A
B
C
D
E
F
1.27  
4.06  
2.29  
1.99  
0.90  
4.95  
0.10  
0.15  
0.050  
0.160  
0.090  
0.078  
0.035  
0.195  
0.004  
0.006  
0.062  
0.181  
0.111  
0.098  
0.056  
0.210  
0.008  
0.012  
G
H
SUGGESTED PAD LAYOUT  
Symbol  
Unit (mm)  
Unit (inch)  
A
B
C
D
E
1.68  
1.52  
3.93  
2.41  
5.45  
0.066  
0.060  
0.155  
0.095  
0.215  
MARKING DIAGRAM  
P/N =  
G =  
Specific Device Code  
Green Compound  
Date Code  
YW =  
F =  
Factory Code  
Document Number: DS_D0000075  
Version: C15  
BYG20D - BYG20J  
Taiwan Semiconductor  
CREAT BY ART  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
Document Number: DS_D0000075  
Version: C15  

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