BZT52B6V8S [TSC]
200mW, 2% Tolerance SMD Zener Diode; 为200mW ， 2 ％的误差贴片稳压二极管
| 型号： | BZT52B6V8S |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 200mW, 2% Tolerance SMD Zener Diode |
| 文件： | 总3页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
SOD-323F
B
C
A
Features
Wide zener voltage range selection : 2.4V to 75V
VZ Tolerance Selection of ±2%
D
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
E
F
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
Max
Min
Max
Mechanical Data
Case : Flat lead SOD-323 small outline plastic package
A
B
C
D
E
F
1.15 1.35 0.045 0.053
2.30 2.70 0.091 0.106
0.25 0.40 0.010 0.016
1.60 1.80 0.063 0.071
0.80 1.00 0.031 0.039
0.05 0.20 0.002 0.008
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.02±0.5 mg
Ordering Information
Part No.
Packing
Package
BZT52BxxS RR
3Kpcs / 7" Reel
SOD-323F
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
200
Units
mW
V
Power Dissipation
Forward Voltage
VF
1
IF=10mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
RθJA
TJ, TSTG
625
°C/W
°C
-65 to + 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Current
IF
VZM
VZ
VBR
VR
Voltage
VF
IR
I
ZK
VBR
IZK
: Voltage at IZK
: Test current for voltage VBR
: Dynamic impedance at IZK
: Test current for voltage VZ
: Voltage at current IZT
ZZK
IZT
IZT
VZ
IZM
ZZT
IZM
: Dynamic impedance at IZT
: Maximum steady state current
: Voltage at IZM
BreakdownRegion Leakage Region
Forward Region
VZM
Version : B09
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers
VZ @ IZT (Volt)
ZZT @ IZT(Ω)
ZZK @ IZK(Ω) IR @ VR(μA)
Part Number
IZT(mA)
IZK(mA)
VR(V)
Max
Max
Max
Nom
2.35
Min
2.4
2.7
3
Max
2.45
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
BZT52B43S
BZT52B47S
BZT52B51S
BZT52B56S
BZT52B62S
BZT52B68S
BZT52B75S
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
100
100
100
95
1
1
564
564
564
564
564
564
564
470
451
376
141
75
45
1
1
2.65
2.75
18
2.94
3.06
1
9
1
3.23
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
3.37
1
4.5
1
3.53
3.67
90
1
4.5
1
3.82
3.98
90
1
2.7
1
4.21
4.39
90
1
2.7
1
4.61
4.79
80
1
2.7
2
5
5.2
60
1
1.8
2
5.49
5.71
40
1
0.9
2
6.08
6.32
10
1
2.7
4
6.66
6.94
15
1
1.8
4
7.35
7.65
15
1
75
0.9
5
8.04
8.36
15
1
75
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
5
8.92
9.28
15
1
94
6
9.8
10.2
20
1
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
7
10.78
11.76
12.74
14.7
11.22
12.24
13.26
15.3
20
1
8
25
1
8
30
1
8
30
1
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
40
1
45
1
55
1
55
1
70
1
80
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
80
80
90
130
150
170
180
200
215
240
255
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest Taiwan semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value
equal to 10% of the DC zener current (IZT or IZK) is superimposed to IZT or IZK.
Version : B09
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Zener Breakdown Characteristics
FIG 1 Typical Forward Characteristics
1000
100
10
100
Ta=25°C
10
1
Ta=25°C
0.1
1
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
1
2
3
4
5
6
7
8
9
10 11 12
Forward Voltage (V)
Zener Voltage (V)
FIG 4 Admissible Power Disspation Curve
FIG 3 Zener Breakdown Characteristics
100
10
1
300
250
200
150
100
50
0
0
0
0
50
100
150
200
15
25
35
45
55
65
75
Zener Voltage (V)
Ambient Tempeture (°C)
FIG 5 Typical Capacitance
FIG 6 Effect of Zener Voltage on Impedence
1000
100
10
1000
100
10
Iz=1mA
Iz=5mA
Iz=20m
1V Bias
Bias at 50% of VZ(Nom)
1
1
1
10
100
1
10
Zener Voltage (V)
100
Zener Voltage (V)
Version : B09
相关型号：
BZT52B75-D4
DIODE 75 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2, Voltage Regulator Diode
VISHAY
BZT52B75-G3-18
Zener Diode, 75V V(Z), 2%, 0.5W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2
VISHAY
©2020 ICPDF网 联系我们和版权申明