DTC114 [TSC]
NPN Small Signal Transistor Small Signal Diode; NPN小信号晶体管小信号二极管
| 型号： | DTC114 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | NPN Small Signal Transistor Small Signal Diode |
| 文件： | 总3页 (文件大小：434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC114 EM/EE/EUA/ECA/ESA
NPN Small Signal Transistor
Small Signal Diode
Features
Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Only the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Ordering Information
Part No.
DTC114 EM
DTC114 EE
DTC114 EUA
DTC114 ECA
DTC114 ESA
Packing
Package
SOT-723
SOT-523
SOT-323
SOT-23
8K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
TO-92S
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Value
EUA ECA
200
50
Type Number
Power Dissipation
Symbol
Units
EM
ESA
300
EE
150
PD
VCC
VIN
100
mW
V
Supply Voltage
Input Voltage
-10～40
50
V
IO
Output Current
mA
IC(MAX)
100
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Parameter
Symbol Min Typ
Max
Condtion
Unit
VCC=5V,IO=100μA
VO=0.3V,IO=10mA
IO/II=10mA/5mA
VI(on)
3
Input Voltage
VI(off)
0.5
V
V
Output Voltage
VO(on)
0.3
VI=5V
Input Current
II
0.88
mA
VCC=50V,VI=0
Output Current
IO（off)
0.5
μA
VO=5V,IO=5mA
DC Current Gain
Input Resistance
GI
30
7
R1
10
1
13
KΩ
Resistance Ratio
R2/R1
fT
0.8
1.2
VO=10V,IO=5mA,f=100MHz
Transition Frequency
250
MHz
Version:A12
DTC114 EM/EE/EUA/ECA/ESA
NPN Small Signal Transistor
Small Signal Diode
Typical Characteristics
DTC114E A
U
OFF Characteristics
ON Characteristics
10
100
VCC=5V
VO=0.3V
Ta=100℃
25℃
3
1
30
10
Ta=25℃
100℃
0.3
0.1
3
1
0.03
0.01
0.3
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
INPUT VOLTAGE VI(OFF) (V)
OUTPUT CURRENT IO (mA)
VO(ON) —— IO
GI —— IO
1
1000
IO/II=20
VO=5V
Ta=100℃
25℃
300
100
0.3
0.1
Ta=100℃
25℃
30
10
0.03
0.01
3
1
3
0.3
3
1
10
30
100
0.1
1
10
30
100
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
PD —— Ta
CO —— VR
10
8
400
350
300
250
200
150
100
50
f=1MHz
Ta=25℃
DTC114ESA
6
DTC114EUA/CA
DTC114EE
4
DTC114EM
2
0
0
0
4
8
12
16
20
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
Version:A12
DTC114 EM/EE/EUA/ECA/ESA
NPN Small Signal Transistor
SOT-23
SOT-323
A
A
F
F
B
B
E
E
C
D
G
C
D
Unit (mm)
Min Max
Unit (inch)
Unit (mm)
Unit (inch)
Dimensions
Dimensions
Min
0.11
0.05
0.01
0.07
0.09
0.04
Max
Min
Max
Min
0.07
0.05
0.01
0.05
0.08
0.03
Max
A
B
C
D
E
F
A
B
C
D
E
F
2.80
1.20
0.30
1.80
2.25
0.90
3.00
1.40
0.50
2.00
2.55
1.20
0.12
0.06
0.02
0.08
0.10
0.04
1.90
1.15
0.25
1.20
2.00
0.80
2.10
1.35
0.35
1.40
2.20
1.00
0.08
0.05
0.01
0.06
0.09
0.04
G
0.550 REF
0.022 REF
SOT-523
SOT-723
A
A
F
F
E
E
B
B
C
C
D
D
Unit (mm)
Unit (inch)
Unit (mm)
Unit (inch)
Dimensions
Dimensions
Min
Max
Min
0.06
0.03
0.01
0.04
0.06
0.03
Max
Min
1.15
0.75
0.17
Max
1.25
0.85
0.27
Min
0.05
0.03
0.01
Max
0.05
0.03
0.01
A
B
C
D
E
F
A
B
C
D
E
F
1.50
0.70
0.25
0.90
1.50
0.70
1.70
0.80
0.35
1.10
1.70
0.90
0.07
0.03
0.01
0.04
0.07
0.04
0.8 TYP
0.31TYP
1.15
1.25
0.50
0.05
0.05
0.02
TO-92S
A
E
B
G
F
Unit (mm)
Min Max
Unit (inch)
C
Dimensions
Min
0.15
0.12
0.59
0.01
0.06
0.03
0.01
Max
A
B
C
D
E
F
3.85
3.01
15.10
0.38
1.42
0.66
0.36
4.15
3.31
15.50
0.55
1.62
0.86
0.51
0.16
0.13
0.61
0.02
0.06
0.03
0.02
D
G
Version:A12
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