EGP10K [TSC]
1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers; 1.0 AMP 。玻璃钝化高效塑料整流器
| 型号： | EGP10K |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP10A THRU EGP10M
1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
DO-41
Features
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Plastic material used carries Underwriters Laboratory
Classification 94V-0
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Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature soldering guaranteed:
300℃/10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
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Cases: JEDEC DO-41 molded plastic over glass
body
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Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
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Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
EGP EGP EGP EGP EGP EGP EGP EGP
10A 10B 10D 10F 10G 10J 10K 10M
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@TA = 55℃
1.0
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
30.0
A
V
IFSM
Maximum Instantaneous Forward Voltage
@ 1.0A
0.95
20
1.25
1.7
75
VF
IR
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage @ TA=125℃
5.0
100.0
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
TJ=25℃
Trr
50
nS
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Cj
RθJA
TJ
15
pF
℃/W
℃
70
-65 to + 150
-65 to + 150
Storage Temperature Range
℃
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
- 584 -
RATINGS AND CHARACTERISTIC CURVES (EGP10A THRU EGP10M)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.5- TYPICAL REVERSE CHARACTERISTICS
1000
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
Tj=1500C
100
0.5
Tj=1000C
10
0
1
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
Tj=250C
0.1
30
25
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
0.01
0
20
40
60
80
100
120
140
20
15
10
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
PULSE WIDTH-300
1% DUTY CYCLE
S
5
0
100
1
10
NUMBER OF CYCLES AT 60Hz
Tj=250C
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
60
Tj=1500C
Tj=250C
f=1.0MHz
Vsig=50mVp-p
50
40
30
0.1
20
10
EGP10A-EGP10D
EGP10F EGP10M
5
0
EGP10A-EGP10D
EGP10F & EGP10M
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1000
0.1
1
100
10
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
- 585 -
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