EGP20D [TSC]
2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers; 2.0安培。玻璃钝化高效塑料整流器
| 型号： | EGP20D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP20A THRU EGP20K
2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 800 Volts
Current
2.0 Amperes
DO-15
Features
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Plastic material used carries Underwriters Laboratory
Classification 94V-0
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Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature metallurgically bonded construction
High temperature soldering guaranteed:
300℃/10 seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
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Cases: JEDEC DO-15 molded plastic over glass body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
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Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.015 ounce, 0.4 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
EGP EGP EGP EGP EGP EGP EGP
Symbol
Type Number
Units
20A
20B
20D
20F
20G
20J
20K
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 200 300 400 600 800
35 70 140 210 280 420 560
50 100 200 300 400 600 800
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length @ TA = 55℃
2.0
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
75.0
A
IFSM
VF
Maximum Instantaneous Forward Voltage @ 2.0A
0.95
40
1.25
5.0
100
1.7
75
V
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage @ TA=125℃
uA
uA
nS
pF
IR
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Trr
Cj
50
35
60
20
RθJA
RθJL
Typical Thermal Resistance (Note 3)
℃/W
Operating and Storage Temperature Range
TJ ,TSTG
℃
-65 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied VR=4.0 Volts
3. Mount on Cu-Pad Size 10mm x 10mm on P.C.B.
- 588 -
RATINGS AND CHARACTERISTIC CURVES (EGP20A THRU EGP20K)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.5- TYPICAL REVERSE CHARACTERISTICS
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
100
3.0
2.0
1.0
0
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
Tj=1500C
10
1
Tj=1250C
0.1
0
25
50
75
100
125
150
175
Tj=750C
AMBIENT TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
0.01
90
75
60
Tj=250C
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
45
30
15
FIG.6- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
PULSE WIDTH-300
1% DUTY CYCLE
S
0
1
10
100
10
NUMBER OF CYCLES AT 60Hz
Tj=1500C
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
140
120
100
80
Tj=250C
Tj=250C
f=1.0MHz
Vsig=50mVp-p
0.1
60
40
20
EGP20A-EGP20D
EGP20F EGP20K
EGP20A-EGP20D
EGP20F-EGP20K
0.01
0.2
1.8
0
0.4
0.6
0.8
1.0
1.2
1.4 1.6
0.1
1
100
1000
10
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
- 589 -
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