ES2C [TSC]
2.0 AMPS. Super Fast Surface Mount Rectifiers; 2.0安培。超快表面贴装整流器
| 型号： | ES2C |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 2.0 AMPS. Super Fast Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES2A THRU ES2J
2.0 AMPS. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
2.0 Amperes
SMB/DO-214AA
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.082(2.08)
.076(1.93)
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
ꢀ
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
Mechanical Data
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.093 gram
.208(5.28)
.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES ES ES ES ES ES
2A 2B 2C 2D 2F 2G 2H 2J
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
Maximum Average Forward Rectified
Current See Fig. 1
I(AV)
IFSM
VF
2.0
A
A
V
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
@TA =25℃ at Rated DC Blocking Voltage
@ TA=100℃
50
0.95
25
1.3
1.7
10
350
uA
uA
IR
Maximum Reverse Recovery Time
( Note 1 )
Trr
Cj
35
nS
pF
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
20
RθJA
RθJL
TJ
75
20
℃/W
℃
℃
Operating Temperature Range
Storage Temperature Range
-55 to +150
-55 to + 150
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Units Mounted on P.C.B. 0.4 x 0.4" (10 x 10mm) Pad Areas
- 216 -
RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
3.0
2.0
60
50
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120oC
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
40
30
1.0
20
10
0
0
80
90
100
110
120
130
140
150
100
10
1
LEAD TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
60
10
1000
Tj=250C
PULSE WIDTH-300
1% DUTY CYCLE
S
100
10
Tj=1250C
D
-
G
-
ES2A
ES2F
J
-
1
Tj=850C
ES2H
1
Tj=250C
0.1
0.1
0.01
0.01
0.4
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
60
50
40
Tj=250C
f=1.0MHz
Vsig=50mVp-p
30
20
10
0
1
100
0
10
REVERSE VOLTAGE. (V)
- 217 -
相关型号：
ES2C-13-F
Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, GREEN, PLASTIC, SMB, 2 PIN
DIODES
ES2C-E3/52T
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
ES2C-E3/5BT
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
ES2C-HE3
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
ES2C-HE3/52T
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
ES2C-HE3/5BT
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明