ES3D [TSC]
3.0 AMPS. Super Fast Surface Mount Rectifiers; 3.0安培。超快表面贴装整流器
| 型号： | ES3D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. Super Fast Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3A THRU ES3J
3.0 AMPS. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
3.0 Amperes
SMC/DO-214AB
Features
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Glass passivated junction chip
For surface mounted applications
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.129(3.27)
.118(3.0)
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
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.103(2.62)
.079(2.00)
Mechanical Data
.008(.20)
.004(.10)
.060(1.52)
.030(0.76)
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Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
.320(8.13)
.305(7.75)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES ES ES ES ES ES
Type Number
Units
3A 3B 3C 3D 3F 3G 3H 3J
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50 100 150 200 300 400 500 600
V
V
V
35
70 105 140 210 280 350 420
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
3.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) @TL = 100℃
IFSM
100
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
IR
0.95
45
1.3
1.7
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
10
500
35
uA
uA
nS
pF
Trr
Cj
RθJA
RθJL
TJ
30
47
12
℃/W
℃
℃
Operating Temperature Range
Storage Temperature Range
-55 to +150
-55 to + 150
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Units Mounted on P.C.B. with 0.6 x 0.6”(16 x 16mm) Copper Pad Areas
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RATINGS AND CHARACTERISTIC CURVES (ES3A THRU ES3J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
125
100
75
3
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120oC
2
1
50
P.C.B. MOUNTED ON
0.31X0.31"(8.0X8.0mm) COPPER PADS
25
0
0
80
90
100
110
120
130
140
150
100
10
NUMBER OF CYCLES AT 60Hz
1
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
Tj=250C
PULSE WIDTH-300
1% DUTY CYCLE
S
100
Tj=1000C
10
D
-
G
-
ES3A
10
ES3F
Tj=750C
1
J
-
ES3H
1
Tj=250C
0.1
0.1
0.01
0
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
105
90
Tj=250C
f=1.0MHz
Vsig=50mVp-p
75
60
45
30
15
0
10
100
1
REVERSE VOLTAGE. (V)
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相关型号：
ES3D-HE3/9AT
3A, 200V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
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