ESH3D [TSC]
3.0AMPS Surface Mount Super Fast Rectifiers; 3.0AMPS表面贴装超快速整流器
| 型号： | ESH3D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0AMPS Surface Mount Super Fast Rectifiers |
| 文件： | 总2页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CREAT BY ART
ESH3B - ESH3D
3.0AMPS Surface Mount Super Fast Rectifiers
SMC/DO-214AB
RoHS
Pb
COMPLIANCE
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain rellef, Ideal for automated place ment
Ideal for automated placement
Easy pick and place
Super fast recovery time for high efficiency
Qualifited as per AEC-Q101
High temperature soldering:
260℃/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Dimensions in inches and (millimeters)
Marking Diagram
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
ESH3X = Specific Device Code
G
Y
= Green Compound
= Year
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
Packing: 16mm tape per EIA STD RS-481
Weight: 0.21 grams
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ESH3B
ESH3C
ESH3D
Symbol
Unit
Type Number
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
100
70
150
105
150
3
200
140
200
V
V
V
A
Maximum RMS Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load
IFSM
VF
IR
125
A
V
Maximum Instantaneous Forward Voltage (Note 1)
@ 3 A
0.90
5
Maximum Reverse Current @ Rated VR TA=25 ℃
uA
T
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
A=125 ℃
150
25
Trr
Cj
nS
pF
45
RθjA
RθjL
47
12
OC/W
Typical Thermal Resistance
OC
OC
Operating Temperature Range
Storage Temperature Range
TJ
- 55 to + 175
- 55 to + 175
TSTG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:B11
RATINGS AND CHARACTERISTIC CURVES (ESH3B THRU ESH3D)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
3.5
3
125
100
75
50
25
0
8.3mS Single Half Sine Wave
JEDEC Method
2.5
2
1.5
1
RESISTER OR
INDUCTIVE LOAD
0.5
0
0
25
50
75
100
125
150
175
1
10
100
LEAD TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
1000
100
10
10
TA=125℃
1
TA=75℃
0.1
0.01
1
TA=25℃
TA=25℃
Pulse Width=300us
1% Duty Cycle
0.1
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
10
1
100
75
50
25
0
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
T-PULSE DURATION(s)
Version:B11
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