FRA803G [TSC]
8.0 AMPS. Glass Passivated Fast Recovery Rectifiers; 8.0安培。玻璃钝化快速恢复整流器
| 型号： | FRA803G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRA801G THRU FRA807G
8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
TO-220A
Features
.185(4.70)
.175(4.44)
ꢀ
ꢀ
ꢀ
ꢀ
Low forward voltage drop
High current capability
High reliability
.055(1.40)
.045(1.14)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.113(2.87)
.103(2.62)
.27(6.86)
.23(5.84)
High surge current capability
.594(15.1)
.587(14.9)
Mechanical Data
PIN1
2
.16(4.06)
.14(3.56)
.11(2.79)
.10(2.54)
ꢀ
ꢀ
ꢀ
Cases: Molded plastic
.56(14.22)
.53(13.46)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10 seconds .16”,(4.06mm) from
case.
.037(0.94)
.027(0.68)
.025(0.64)
.014(0.35)
.205(5.20)
.195(4.95)
ꢀ
ꢀ
PIN 1
PIN 2
CASE
Case Positive
ꢀ
ꢀ
Mounting position: Any
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FRA FRA FRA FRA FRA FRA FRA
801G 802G 803G 804G 805G 806G 807G
Symbol
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100 200 400 600 800 1000
8.0
Maximum Average Forward Rectified Current
@TC = 55℃
A
I(AV)
IFSM
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
150
1.3
5.0
100
A
V
uA
uA
Maximum Instantaneous Forward Voltage @ 8.0A
VF
IR
Maximum DC Reverse Current @ TC=25℃
at Rated DC Blocking Voltage @ TC=125℃
Maximum Reverse Recovery Time ( Note 2 )
Trr
Cj
150
250
500
nS
pF
Typical Junction Capacitance ( Note 1 ) TJ=25℃
60
Typical Thermal Resistance (Note 3)
℃/W
℃
3.0
RθJC
TJ ,TSTG
Operating and Storage Temperature Range
-65 to +150
Notes:1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate
- 452 -
RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
400
10
200
100
8
6
4
2
0
40
20
10
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
4
2
0
50
100
150
CASE TEMPERATURE. (oC)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.4
0.2
150
125
TJ=1250C
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
100
75
INSTANTANEOUS FORWARD VOLTAGE. (V)
8.3ms Single Half Sine Wave
JEDEC Method
FIG.6- TYPICAL REVERSE CHARACTERISTICS
50
25
100
0
40
1
2
5
10
20
50
100
Tj=1250C
NUMBER OF CYCLES AT 60Hz
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
100
80
Tj=750C
4
2
1
60
0.4
40
20
0
Tj=250C
f=1.0MHz
Vsig=50mVp-p
Tj=250C
0.2
0.1
0
20
40
60
80
100
120
140
0.1
0.5
1
5
10
50
100
500 1000
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
REVERSE VOLTAGE. (V)
- 453 -
相关型号：
FRA803GF-BP
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRA803GF-BP-HF
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
©2020 ICPDF网 联系我们和版权申明