FRAF801G_1 [TSC]
Isolated 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers; 分离出8.0安培。玻璃钝化快速恢复整流器
| 型号： | FRAF801G_1 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolated 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRAF801G - FRAF807G
Isolated 8.0AMPS.Glass Passivated
Fast Recovery Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.406(10.3)
.390(9.90)
.124(3.16)
.118(3.00)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
Features
.606(15.5)
.583(14.8)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
.063(1.6)
MAX
.161(4.1)
.146(3.7)
High surge current capability
Low power loss
.110(2.8)
.098(2.5)
.543(13.8)
.512(13.2)
.055(1.4)
.043(1.1)
.071(1.8)
MAX
.030(0.76)
.020(0.50)
.035(0.9)
.020(0.5)
Mechanical Data
2
.100(2.55)
PIN 1
PIN 2
Case Positive
.100(2.55)
ꢀ
ꢀ
ꢀ
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
CASE
Dimensions in inches and (millimeters)
ꢀ
ꢀ
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds 0.25”,(6.35mm) from
case.
ꢀ
ꢀ
ꢀ
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FRAF FRAF FRAF FRAF FRAF FRAF
FRAF
Symbol
Type Number
Units
807G
801G 802G 803G 804G 805G 806G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum DC Blocking Voltage
100 200 400 600 800 1000
8.0
Maximum Average Forward Rectified Current
I(AV)
A
o
@T = 55 C
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
VF
IR
150
1.3
A
V
Maximum Instantaneous Forward Voltage @ 8.0A
o
5.0
uA
uA
Maximum DC Reverse Current @ T =25 C
C
o
at Rated DC Blocking Voltage @ T =125 C
C
100
Maximum Reverse Recovery Time ( Note 2 )
Trr
Cj
150
250
500
nS
pF
o
Typical Junction Capacitance ( Note 1 ) TJ=25 C
50
5.0
-65 to +150
o
Typical Thermal Resistance (Note 3)
RθJC
C/W
o
Operating and Storage Temperature Range
T ,T
J
C
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Notes:
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (FRAF801G THRU FRAF807G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
10
8
100
40
Tj=1250C
6
10
4
4
Tj=750C
2
2
1
0
0
50
100
150
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
Tj=250C
0.4
0.2
150
125
100
75
TJ=1250C
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
400
25
200
100
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
40
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
100
80
60
40
20
0
20
10
Tj=250C
f=1.0MHz
Vsig=50mVp-p
4
2
1
0.4
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: A06
相关型号：
FRAF802G
Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRAF802G-BP
Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRAF803G
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRAF804G
Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRAF804G-BP
Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRAF805G
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
FRAF806G
Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MCC
©2020 ICPDF网 联系我们和版权申明