GS1J [TSC]

1.0 AMPS. Surface Mount Silicon Rectifiers; 1.0安培。表面贴装矽整流器
GS1J
型号: GS1J
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

1.0 AMPS. Surface Mount Silicon Rectifiers
1.0安培。表面贴装矽整流器

文件: 总2页 (文件大小:505K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GS1A - GS1M  
1.0 AMPS. Surface Mount Silicon Rectifiers  
SMAE  
RoHS  
Pb  
COMPLIANCE  
Features  
For surface mounted application  
Esay pick and place  
Low forward voltage drop  
High current capability  
High surge current capability  
High temperature soldering guaranteed:  
260oC / 10 seconds at terminals  
Plastic material used carriers Underwriters  
Laboratory Classification 94V-0  
Green compound with suffix “G” on packing code &  
prefix “G” on datecode.  
Mechanical Data  
Cases: SMAE Molded plastic  
Terminals: Lead free Finish  
Polarity: Indicated by cathode band.  
Weight: 0.073 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol  
GS1A GS1B GS1D GS1G GS1J GS1K GS1M Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
@Ta(See Fig. 1)  
I(AV)  
IFSM  
1.0  
A
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-  
wave Superimposed on Rated Load (JEDEC method )  
25  
Maximum Instantaneous Forward Voltage (Note 1)  
IF= 1.0A @Ta=25oC  
VF  
1.1  
V
Maximum DC Reverse Current @ Ta=25oC  
@ Ta=125oC  
1.0  
50.0  
IR  
uA  
pF  
Typical Junction Capacitance(Note 3)  
15  
Cj  
RθJA  
RθJL  
80  
28  
OC/W  
Typical Thermal Resistance (Note 2)  
OC  
OC  
TJ  
Operating Temperature Range  
-55 to +150  
-55 to +150  
TSTG  
Storage Temperature Range  
Notes: 1. Pulse Test with PW=300u sec, 1% Duty Cycle.  
2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.  
3. Measured at f=1.0MHz, VR= 4.0V D.C.  
Version : A09  
RATINGS AND CHARACTERISTIC CURVES (GS1A THOU GS1M)  
FIG.1 Maximum Forward Current Derating Curve  
FIG 2 Maximum Forward Surge Current  
50  
40  
30  
20  
10  
0
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
Lead Temperature (oC)  
Number of Cycles at 60 Hz  
FIG 3 TYPICAL FORWARD CHARACTERISTICS  
FIG 4 TYPICAL REVERSE LEAKAGE  
CHARACTERISTICS  
10  
100  
10  
Ta=125oC  
1
1
0.1  
0.1  
Ta= 25oC  
0.01  
0.001  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
Percentage of VR (%)  
Forward Voltage (V)  
FIG 5 Typical Junction Capacitance  
1000  
100  
10  
Tj=25oC  
f=1.0MHZ  
Vsig=50mVp-  
p
0.1  
1
10  
100  
Reverse Voltage (V)  
Version : A09  

相关型号:

GS1J-AU

SURFACE MOUNT RECTIFIER
PANJIT

GS1J-E

SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE:600V to 1000V CURRENT: 1.0A
GULFSEMI

GS1J-L

1.0 Amp Glass Passivated Rectifier 50 to 1000 Volts Extremely Low Thermal Resistance
MCC

GS1J-L-TP-HF

SIGNAL DIODE
MCC

GS1J-LT

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
MCC

GS1J-LT-T

Rectifier Diode,
MCC

GS1J-LTP

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
MCC

GS1J-T

Rectifier Diode,
MCC

GS1J-T1

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
WTE

GS1J-T3

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
WTE

GS1J-T3-LF

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
WTE

GS1J-TPS05

1.0 Amp Silicon Rectifier 50 to 1000 Volts
MCC