HER104G-K [TSC]
1A, 50V - 1000V Glass Passivated High Efficient Rectifier;型号: | HER104G-K |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | 1A, 50V - 1000V Glass Passivated High Efficient Rectifier |
文件: | 总7页 (文件大小:412K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HER101G-K - HER108G-K
Taiwan Semiconductor
1A, 50V - 1000V Glass Passivated High Efficient Rectifier
FEATURES
KEY PARAMETERS
● Glass passivated chip junction
● High current capability, Low VF
● High reliability
PARAMETER
IF(AV)
VRRM
VALUE
UNIT
1
50 - 1000
30
A
V
● High surge current capability
IFSM
A
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
TJ MAX
150
°C
Package
Configuration
DO-204AL (DO-41)
Single die
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.33 g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
HER
101
G-K
HER
102
G-K
HER
103
G-K
HER
104
G-K
HER
105
G-K
HER
106
G-K
HER
107
G-K
HER
108
G-K
PARAMETER
SYMBOL
UNIT
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108
Marking code on the device
G
G
G
G
G
G
G
G
Repetitive peak reverse
voltage
VRRM
50
100
200
300
400
600
800
1000
V
Reverse voltage, total rms
value
VR(RMS)
IF(AV)
35
70
140
210
280
420
560
700
V
A
Forward current
1
Surge peak forward current,
8.3 ms single half sine-wave
superimposed on rated load
per diode
IFSM
30
A
Junction temperature
Storage temperature
TJ
- 55 to +150
- 55 to +150
°C
°C
TSTG
1
Version:A1703
HER101G-K - HER108G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJA
LIMIT
60
UNIT
°C/W
°C/W
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
RӨJC
15
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
HER101G-K
HER102G-K
HER103G-K
HER104G-K
HER105G-K
HER106G-K
HER107G-K
HER108G-K
-
1.0
V
Forward voltage per diode (1)
IF = 1A,TJ = 25°C
VF
-
-
1.3
1.7
V
V
-
-
5
µA
µA
TJ = 25°C
Reverse current @ rated VR per diode (2)
IR
150
TJ = 125°C
HER101G-K
HER102G-K
HER103G-K
HER104G-K
HER105G-K
HER106G-K
HER107G-K
HER108G-K
HER101G-K
HER102G-K
HER103G-K
HER104G-K
HER105G-K
HER106G-K
HER107G-K
HER108G-K
15
10
-
-
pF
pF
ns
ns
Junction capacitance
1 MHz, VR=4.0V
CJ
-
50
75
IF=0.5A , IR=1.0A
IRR=0.25A
Reverse recovery time
trr
-
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:A1703
HER101G-K - HER108G-K
Taiwan Semiconductor
ORDERING INFORMATION
PACKING
PACKING CODE
SUFFIX
PART NO.
PACKAGE
PACKING
CODE
A0
DO-41
DO-41
DO-41
DO-41
3,000 / Ammo box (52mm taping)
5,000 / 13" Paper reel
R0
R1
B0
HER10xG-K
(Note 1, 2)
G
5,000 / 13" Paper reel (Reverse)
1,000 / Bulk packing
Notes:
1. "x" defines voltage from 50V (HER101G-K) to 1000V (HER108G-K)
2. Whole series with green compound (halogen-free)
EXAMPLE P/N
PACKING
PACKING CODE
EXAMPLE P/N
PART NO.
DESCRIPTION
CODE
SUFFIX
HER101G-K A0G
A0
Green compound
HER101G-K
G
3
Version:A1703
HER101G-K - HER108G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
70
60
50
40
30
20
10
0
2
1
HER101G-K - HER105G-K
RESISTIVE OR
INDUCTIVE LOAD
HER106G-K - HER108G-K
0
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
AMBIENT TEMPERATURE (oC)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
1000
100
10
100
10
1
HER101G-K - HER104G-K
HER105G-K
TJ=100°C
TJ=75°C
1
TJ=25°C
HER106G-K - HER108G-K
0.1
0.1
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:A1703
HER101G-K - HER108G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
40
8.3ms Single Half Sine Wave
35
30
25
20
15
10
5
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:A1703
HER101G-K - HER108G-K
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-204AL (DO-41)
Unit (mm)
Unit (inch)
DIM.
Min
2.00
Max
Min
Max
A
B
C
D
E
2.70
0.86
-
0.079
0.028
1.000
0.165
1.000
0.106
0.71
0.034
25.40
4.20
-
0.205
-
5.20
-
25.40
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW = Date Code
= Factory Code
F
6
Version:A1703
HER101G-K - HER108G-K
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7
Version:A1703
相关型号:
HER104G-TP
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MCC
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