HER201G-T [TSC]
2A, 50V - 600V Glass Passivated High Efficient Rectifier;
| 型号： | HER201G-T |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 2A, 50V - 600V Glass Passivated High Efficient Rectifier |
| 文件： | 总6页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER201G-T - HER206G-T
Taiwan Semiconductor
2A, 50V - 600V Glass Passivated High Efficient Rectifier
FEATURES
● Glass passivated chip junction
● High efficiency, Low VF
● High current capability
● High surge current capability
● Low power loss
KEY PARAMETERS
PARAMETER
IF(AV)
VRRM
VALUE
UNIT
2
A
50 - 600
60
V
IFSM
A
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
TJ MAX
150
°C
Package
Configuration
DO-204AC (DO-15)
Single die
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-204AC (DO-15)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.4 g (approximately)
DO-204AC (DO-15)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
HER201 HER202 HER203 HER204 HER205 HER206
PARAMETER
SYMBOL
UNIT
G-T
G-T
G-T
G-T
G-T
G-T
HER201G HER202G HER203G HER204G HER205G HER206G
Marking code on thedevice
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
50
35
100
70
200
140
300
210
400
280
600
420
VRRM
V
VR(RMS)
IF(AV)
V
A
Forward current
2
Surge peak forward
current, 8.3 ms single half
sine-wave superimposed
on rated load per diode
IFSM
60
A
Junction temperature
Storage temperature
TJ
- 55 to +150
- 55 to +150
°C
°C
TSTG
1
Version:A1703
HER201G-T - HER206G-T
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to- ambient thermal resistance
RӨJA
60
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
HER201G-T
HER202G-T
HER203G-T
HER204G-T
-
1.0
V
Forward voltage per diode (1)
IF = 2A,TJ = 25°C
VF
HER205G-T
HER206G-T
-
-
-
-
1.3
1.7
5
V
V
µA
µA
TJ = 25°C
Reverse current @ rated VR per diode (2)
IR
150
TJ = 125°C
HER201G-T
HER202G-T
HER203G-T
HER204G-T
HER205G-T
HER206G-T
35
20
-
-
pF
pF
ns
ns
Junction capacitance
1 MHz, VR=4.0V
CJ
-
HER201G-T
HER202G-T
HER203G-T
HER204G-T
HER205G-T
HER206G-T
50
75
IF=0.5A , IR=1.0A
IRR=0.25A
Reverse recovery time
trr
-
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PACKING
PACKING CODE
SUFFIX
PART NO.
PACKAGE
PACKING
CODE
A0
R0
B0
DO-15
DO-15
DO-15
1,500 / Ammo box
HER20xG-T
(Note 1, 2)
G
3,500 / 13" Paper reel
1,000 / Bulk packing
Notes:
1. "x" defines voltage from 50V (HER201G-T) to 600V (HER206G-T)
2. Whole series with green compound (halogen-free)
EXAMPLE P/N
PACKING CODE
EXAMPLE P/N
PART NO.
PACKING CODE
DESCRIPTION
SUFFIX
HER201G-T A0G
A0
Green compound
HER201G-T
G
2
Version:A1703
HER201G-T - HER206G-T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
175
150
125
100
75
3.0
2.0
1.0
HER201G-T - HER205G-T
HER206G-T
50
RESISTIVE OR
INDUCTIVE LOAD
25
f=1.0MHz
Vsig=50mVp-p
0.0
0
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
AMBIENT TEMPERATURE (oC)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
1000
100
100
10
1
TJ=125℃
TJ=75℃
HER201G-T - HER204G-T
10
1
HER205G-T
TJ=25℃
HER206G-T
0.1
0.1
0
20
40
60
80
100
120
140
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
3
Version:A1703
HER201G-T - HER206G-T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
70
8.3mS Single Half Sine Wave
60
50
40
30
20
10
0
JEDEC Method
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
4
Version:A1703
HER201G-T - HER206G-T
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-204AC (DO-15)
Unit (mm)
Unit (inch)
DIM.
Min
2.60
Max
Min
Max
A
B
C
D
E
3.60
0.90
-
0.102
0.028
1.000
0.228
1.000
0.142
0.70
0.035
25.40
5.80
-
0.299
-
7.60
-
25.40
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW = Date Code
= Factory Code
F
5
Version:A1703
HER201G-T - HER206G-T
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version:A1703
相关型号：
HER201G-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
HER201G-TB-LF
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明