HER205G-T

更新时间:2024-10-29 23:23:29
品牌:TSC
描述:2A, 50V - 600V Glass Passivated High Efficient Rectifier

HER205G-T 概述

2A, 50V - 600V Glass Passivated High Efficient Rectifier

HER205G-T 数据手册

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HER201G-T - HER206G-T  
Taiwan Semiconductor  
2A, 50V - 600V Glass Passivated High Efficient Rectifier  
FEATURES  
Glass passivated chip junction  
High efficiency, Low VF  
High current capability  
High surge current capability  
Low power loss  
KEY PARAMETERS  
PARAMETER  
IF(AV)  
VRRM  
VALUE  
UNIT  
2
A
50 - 600  
60  
V
IFSM  
A
Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21  
TJ MAX  
150  
°C  
Package  
Configuration  
DO-204AC (DO-15)  
Single die  
APPLICATIONS  
Switching mode power supply (SMPS)  
Adapters  
TV  
Monitor  
MECHANICAL DATA  
Case: DO-204AC (DO-15)  
Molding compound meets UL 94V-0 flammability rating  
Packing code with suffix "G" means green compound  
(halogen-free)  
Terminal: Pure tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Weight: 0.4 g (approximately)  
DO-204AC (DO-15)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
HER201 HER202 HER203 HER204 HER205 HER206  
PARAMETER  
SYMBOL  
UNIT  
G-T  
G-T  
G-T  
G-T  
G-T  
G-T  
HER201G HER202G HER203G HER204G HER205G HER206G  
Marking code on thedevice  
Repetitive peak reverse  
voltage  
Reverse voltage, total rms  
value  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
VRRM  
V
VR(RMS)  
IF(AV)  
V
A
Forward current  
2
Surge peak forward  
current, 8.3 ms single half  
sine-wave superimposed  
on rated load per diode  
IFSM  
60  
A
Junction temperature  
Storage temperature  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
1
Version:A1703  
HER201G-T - HER206G-T  
Taiwan Semiconductor  
THERMAL PERFORMANCE  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Junction-to- ambient thermal resistance  
RӨJA  
60  
°C/W  
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)  
PARAMETER  
CONDITIONS  
SYMBOL  
TYP  
MAX  
UNIT  
HER201G-T  
HER202G-T  
HER203G-T  
HER204G-T  
-
1.0  
V
Forward voltage per diode (1)  
IF = 2A,TJ = 25°C  
VF  
HER205G-T  
HER206G-T  
-
-
-
-
1.3  
1.7  
5
V
V
µA  
µA  
TJ = 25°C  
Reverse current @ rated VR per diode (2)  
IR  
150  
TJ = 125°C  
HER201G-T  
HER202G-T  
HER203G-T  
HER204G-T  
HER205G-T  
HER206G-T  
35  
20  
-
-
pF  
pF  
ns  
ns  
Junction capacitance  
1 MHz, VR=4.0V  
CJ  
-
HER201G-T  
HER202G-T  
HER203G-T  
HER204G-T  
HER205G-T  
HER206G-T  
50  
75  
IF=0.5A , IR=1.0A  
IRR=0.25A  
Reverse recovery time  
trr  
-
Notes:  
1. Pulse test with PW=0.3 ms  
2. Pulse test with PW=30 ms  
ORDERING INFORMATION  
PACKING  
PACKING CODE  
SUFFIX  
PART NO.  
PACKAGE  
PACKING  
CODE  
A0  
R0  
B0  
DO-15  
DO-15  
DO-15  
1,500 / Ammo box  
HER20xG-T  
(Note 1, 2)  
G
3,500 / 13" Paper reel  
1,000 / Bulk packing  
Notes:  
1. "x" defines voltage from 50V (HER201G-T) to 600V (HER206G-T)  
2. Whole series with green compound (halogen-free)  
EXAMPLE P/N  
PACKING CODE  
EXAMPLE P/N  
PART NO.  
PACKING CODE  
DESCRIPTION  
SUFFIX  
HER201G-T A0G  
A0  
Green compound  
HER201G-T  
G
2
Version:A1703  
HER201G-T - HER206G-T  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.1 Forward Current Derating Curve  
Fig.2 Typical Junction Capacitance  
175  
150  
125  
100  
75  
3.0  
2.0  
1.0  
HER201G-T - HER205G-T  
HER206G-T  
50  
RESISTIVE OR  
INDUCTIVE LOAD  
25  
f=1.0MHz  
Vsig=50mVp-p  
0.0  
0
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
1000  
AMBIENT TEMPERATURE (oC)  
REVERSE VOLTAGE (V)  
Fig.3 Typical Reverse Characteristics  
Fig.4 Typical Forward Characteristics  
1000  
100  
100  
10  
1
TJ=125  
TJ=75℃  
HER201G-T - HER204G-T  
10  
1
HER205G-T  
TJ=25℃  
HER206G-T  
0.1  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
FORWARD VOLTAGE (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
3
Version:A1703  
HER201G-T - HER206G-T  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.5 Maximum Non-repetitive Forward Surge Current  
70  
8.3mS Single Half Sine Wave  
60  
50  
40  
30  
20  
10  
0
JEDEC Method  
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram  
4
Version:A1703  
HER201G-T - HER206G-T  
Taiwan Semiconductor  
PACKAGE OUTLINE DIMENSIONS  
DO-204AC (DO-15)  
Unit (mm)  
Unit (inch)  
DIM.  
Min  
2.60  
Max  
Min  
Max  
A
B
C
D
E
3.60  
0.90  
-
0.102  
0.028  
1.000  
0.228  
1.000  
0.142  
0.70  
0.035  
25.40  
5.80  
-
0.299  
-
7.60  
-
25.40  
MARKING DIAGRAM  
P/N  
= Marking Code  
G
= Green Compound  
YWW = Date Code  
= Factory Code  
F
5
Version:A1703  
HER201G-T - HER206G-T  
Taiwan Semiconductor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
6
Version:A1703  

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