HER305G-K [TSC]
3A, 50V - 1000V Glass Passivated High Efficient Rectifier;型号: | HER305G-K |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | 3A, 50V - 1000V Glass Passivated High Efficient Rectifier |
文件: | 总7页 (文件大小:432K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HER301G-K - HER308G-K
Taiwan Semiconductor
3A, 50V - 1000V Glass Passivated High Efficient Rectifier
FEATURES
KEY PARAMETERS
● Glass passivated chip junction
● High current capability, Low VF
● High reliability
PARAMETER
IF(AV)
VRRM
VALUE
UNIT
3
A
V
50 - 1000
150
● High surge current capability
● Low power loss, high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
TJ MAX
°C
Package
Configuration
DO-201AD
Single die
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-201AD
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 1.1 g (approximately)
DO-201AD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
HER HER HER HER HER HER HER HER
PARAMETER
SYMBOL
301
302
303
304
305
306
307
308 UNIT
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
Marking code on the device
301G 302G 303G 304G 305G 306G 307G 308G
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
VRRM
VR(RMS)
IF(AV)
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
V
A
3
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
IFSM
125
A
Junction temperature
Storage temperature
TJ
- 55 to +150
- 55 to +150
°C
°C
TSTG
1
Version:B1706
HER301G-K - HER308G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-lead thermal resistance per diode
RӨJL
10
°C/W
Junction-to-ambient thermal resistance per diode
RӨJA
35
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
HER301G-K
HER302G-K
HER303G-K
HER304G-K
HER305G-K
-
1.0
V
Forward voltage per diode (1)
IF=3A, TJ=25°C
VF
-
-
1.3
1.7
V
V
HER306G-K
HER307G-K
HER308G-K
-
-
10
µA
µA
TJ = 25°C
Reverse current @ rated VR per diode (2)
IR
200
TJ = 125°C
HER301G-K
HER302G-K
HER303G-K
HER304G-K
HER305G-K
HER306G-K
60
35
-
-
pF
pF
ns
ns
Junction capacitance
1 MHz, VR=4V
CJ
-
HER307G-K
HER308G-K
HER301G-K
HER302G-K
HER303G-K
HER304G-K
HER305G-K
HER306G-K
50
75
IF=0.5A, IR=1.0A
IRR=0.25A
Reverse recovery time
trr
-
HER307G-K
HER308G-K
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:B1706
HER301G-K - HER308G-K
Taiwan Semiconductor
ORDERING INFORMATION
PACKING CODE
SUFFIX
PART NO.
PACKING CODE
PACKAGE
PACKING
A0
R0
B0
DO-201AD
DO-201AD
DO-201AD
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
HER30xG-K
(Note 1, 2)
G
Notes:
1. "x" defines voltage from 50V (HER301G-K) to 1000V (HER308G-K)
2. Whole series with green compound (halogen-free)
EXAMPLE P/N
PACKING CODE
EXAMPLE P/N
PART NO.
PACKING CODE
DESCRIPTION
SUFFIX
A0
Green compound
HER301G-K A0G
HER301G-K
G
3
Version:B1706
HER301G-K - HER308G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
4
175
150
125
100
75
3
2
1
HER301G-K -HER305G-K
50
25
RESISTIVE OR
INDUCTIVE LOAD
0
HER306G-K - HER308G-K
0
0
25
50
75
100
125
150
175
0.1
1
10
100
CASE TEMPERATURE (oC)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
1000
100
TJ=125°C
100
10
HER301G-K - HER304G-K
10
1
HER305G-K
TJ=75°C
1
HER306G-K - HER308G-K
0.1
0.01
TJ=25°C
0.1
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:B1706
HER301G-K - HER308G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
150
8.3ms Single Half Sine Wave
125
100
75
50
25
0
1
10
100
1000
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:B1706
HER301G-K - HER308G-K
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-201AD
Unit (mm)
Unit (inch)
DIM.
Min
5.00
Max
Min
Max
0.220
0.052
-
A
B
C
D
E
5.60
1.30
-
0.197
0.048
1.000
0.335
1.000
1.20
25.40
8.50
9.50
-
0.375
-
25.40
MARKING DIAGRAM
P/N
G
=Marking Code
=Green Compound
=Date Code
YWW
F
=Factory Code
6
Version:B1706
HER301G-K - HER308G-K
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7
Version:B1706
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