HERAF1603G [TSC]
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers; 隔离16.0安培。玻璃钝化高效整流二极管
| 型号： | HERAF1603G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HERAF1601G THRU HERAF1608G
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
16.0 Amperes
ITO-220AC
Features
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Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
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Cases: ITO-220AC molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds 0.25”,(6.35mm) from
case.
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Mounting torque : 5 in – 1bs. max.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Symbol
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50 100 200 300 400 600 800 1000
V
V
V
35
70 140 210 280 420 560 700
Maximum DC Blocking Voltage
50 100 200 300 400 600 800 1000
Maximum Average Forward Rectified
Current @TC =100℃
I(AV)
IFSM
VF
16.0
A
A
V
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@16.0A
Maximum DC Reverse Current
@TA=25℃ at Rated DC Blocking Voltage
@ TA=125℃
250
1.0
1.3
10.0
1.7
uA
uA
IR
400
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
Cj
50
150
80
110
nS
pF
℃/W
℃
RθJC
TJ
2.0
Operating Temperature Range
Storage Temperature Range
-65 to +150
℃
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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RATINGS AND CHARACTERISTIC CURVES (HERAF1601G THRU HERAF1608G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
20
16
Tj=1250C
12
8
100
4
0
10
0
50
100
150
Tj=250C
CASE TEMPERATURE. (oC)
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
Tj=250C
200
150
100
0.1
0
20
40
60
80
100
120
140
8.3ms Single Half Sine Wave
JEDEC Method
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
100
50
0
30
1
2
5
10
20
50
100
F1604G
10
A
NUMBER OF CYCLES AT 60Hz
R
E
AF1605G
~H
ER
H
FIG.5- TYPICAL JUNCTION CAPACITANCE
3.0
1.0
F1601G
A
R
300
250
E
H
Tj=250C
HERAF1601G~HERAF1605G
0.3
0.1
HERAF1606G~HERAF1608G
200
150
H
ER
AF1606G
100
50
~HER
0.03
0.01
AF1608G
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
2
5
10
20
50
100 200
500
1000
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
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