HERF1002G [TSC]
Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers; 隔离10.0安培。玻璃钝化高效整流二极管
| 型号： | HERF1002G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HERF1001G
HERF1008G
THRU
Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
10.0 Amperes
ITO-220AB
Features
.185(4.7)
MAX
.406(10.3)MAX
a
a
a
a
Low forward voltage drop
High current capability
High reliability
.124(3.16)
MAX
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.5)
.583(14.8)
High surge current capability
Mechanical Data
a
a
a
ꢀ
a
a
ꢀ
ꢀ
a
Case: ITO-220AB molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
Terminals: 202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
250°C/ 0.25” (6.35mm) from case for 10
seconds.
.161(4.1)
MAX
.110(2.8)
.098(2.5)
.055(1.4)
MAX
.543(13.8)
.512(13.2)
.030(0.76)
MAX
.035(0.9)
MAX
.100(2.55)
.100(2.55)
Mounting torque: 5 in – 1bs. max.
a
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HERF HERF HERF HERF HERF HERF HERF HERF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 200 300 400 600 800 1000
V
V
V
35
70 140 210 280 420 560 700
Maximum DC Blocking Voltage
50 100 200 300 400 600 800 1000
Maximum Average Forward Rectified Current
@TC = 100°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
10.0
125
A
A
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ TA=25°C
at Rated DC Blocking Voltage @ TA=125°C
1.0
1.3
10.0
1.7
V
uA
uA
nS
pF
400
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance RÛJC (Note 3)
Operating Temperature Range TJ
50
80
80
50
5.0
-65 to +150
-65 to +150
/W
°C
°C
°C
Storage Temperature Range TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes: 3. Thermal Resistance from Junction to Case per Leg Mounted on Heatsink.
- 194 -
RATINGS AND CHARACTERISTIC CURVES (HERF1001G THRU HERF1008G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.3- TYPICAL REVERSE CHARACTERISTICS
10
8
1000
Tj=1250C
6
100
4
2
0
10
0
100
LEAD TEMPERATURE. (oC)
150
50
Tj=250C
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
150
125
100
75
0.1
0
20
40
60
80
100
120
140
8.3ms Single Half Sine Wave
JEDEC Method
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
100
50
25
30
1
2
5
10
20
50
100
G
5
0
10
0
1
NUMBER OF CYCLES AT 60Hz
F
R
E
H
HERF1001G~HERF1G
3.0
FIG.5- TYPICAL JUNCTION CAPACITANCE
HERF1006G~HERF1008G
240
200
160
120
1.0
0.3
0.1
HERF1001G~HERF1005G
80
40
0
H
E
R
F
1
Tj=250C
PULSE WIDTH-300
1% DUTY CYCLE
0.03
.01
0
0
6
G
~
H
E
R
F
1
S
0
0
8
G
.4
.6
.8
1.0
1.2 1.4 1.6
1.8
1
2
5
10
20
50
100 200
500
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
- 195 -
相关型号：
©2020 ICPDF网 联系我们和版权申明