HS2A [TSC]
2.0 AMPS. High Efficient Surface Mount Rectifiers; 2.0安培。高效表面贴装整流器
| 型号： | HS2A |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 2.0 AMPS. High Efficient Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS2A THRU HS2M
2.0 AMPS. High Efficient Surface Mount Rectifiers
Voltage Range
50 to 1000 Volts
Current
2.0 Amperes
SMB/DO-214AA
Features
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Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
.082(2.08)
.076(1.93)
.147(3.73)
.137(3.48)
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Fast switching for high efficiency
High temperature soldering:
260℃/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
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.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
Mechanical Data
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
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Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.093 gram
.208(5.28)
.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbo HS HS HS HS HS HS HS HS
Type Number
Units
l
2A 2B 2D 2F 2G 2J
50 400 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
2K 2M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
50 100 200 300 400 600 800 1000
2.0
Maximum Average Forward Rectified
Current See Fig. 2
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
@TA =25℃ at Rated DC Blocking Voltage
A
A
V
I(AV)
IFSM
VF
50
1.0
1.3
5.0
1.7
uA
uA
IR
@ TA=100℃
100
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Trr
Cj
50
50
75
30
nS
pF
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
℃/W
℃
RθJA
TJ
80
-55 to +150
-55 to +150
℃
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Mounted on P.C.B. with 0.4”x0.4” ( 10 x 10 mm ) Copper Pad Areas.
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RATINGS AND CHARACTERISTIC CURVES (HS2A THRU HS2M)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2- MAXIMUM FORWARD CURRENT
DERATING CURVE
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
3.0
2.5
2.0
1.5
1.0
+0.5A
P.C.B.MOUNTED
0.27X0.27"(7.0X7.0mm)
COPPER PAD AREAS
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
0.5
0
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
0
25 50 75 100 125 150 175
LEAD TEMPERATURE. (oC)
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.3- TYPICAL REVERSE CHARACTERISTICS
10
1000
Tj=1000C
100
1
G
HS2
0.1
10
Tj=250C
0.01
1
HS2A-HS2D
HS2J-HS2M
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
140
20
40
60
80
100
120
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
FIG.6- TYPICAL JUNCTION CAPACITANCE
175
70
150
125
60
50
8.3ms Single Half Sine Wave
JEDEC Method
HS2A-HS2G
HS2J-HS2M
40
100
75
30
20
50
25
0
10
0
2
5
10
20
50
100
1
500
0.1
0.5
1
2
5
10 20
50 100 200
1000
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
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