HS3AB [TSC]
3.0 AMPS. High Efficient Surface Mount Rectifiers; 3.0安培。高效表面贴装整流器
| 型号： | HS3AB |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. High Efficient Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS3AB - HS3MB
3.0 AMPS. High Efficient Surface Mount Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated junction chip.
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
ꢀ
ꢀ
Fast switching for high efficiency
High temperature soldering:
o
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
260 C/10 seconds at terminals
.209(5.30)
.201(5.10)
ꢀ
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Dimensions in inches and (millimeters)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Cases: Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packing: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HS HS
HS
HS
HS
HS
HS
HS
Symbol
Type Number
Units
3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM 50 100 200 300 400 600 800 1000
VRMS 35 70 140 210 280 420 560 700
VDC 50 100 200 300 400 600 800 1000
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
3.0
A
A
V
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
150
IFSM
Maximum Instantaneous Forward Voltage
@ 3.0A
1.0
1.3
10
1.7
VF
o
uA
uA
Maximum DC Reverse Current @ TA =25 C
o
IR
at Rated DC Blocking Voltage @ TA=125 C
250
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Operating Temperature Range
Trr
Cj
50
80
75
50
nS
pF
o
TJ
-55 to +150
-55 to +150
C
o
Storage Temperature Range
TSTG
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts.
Notes:
3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB)
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
3.0
2.5
2.0
1.5
1.0
0.5
0
100
Tj=1250C
10
Tj=250C
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE. (OC)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
300
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
200
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
100
0
1
10
100
1000
NUMBER OF CYCLES AT 60Hz
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
175
150
1
GB
125
100
HS3
HS3JB-HS3MB
75
50
0.1
25
0
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
1.6 1.8
0.1
1
2
5
10 20
50 100 200
500 1000
0.5
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
0
50Vdc
(approx)
(-)
GENERATOR
(NOTE 2)
-0.25A
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: A06
©2020 ICPDF网 联系我们和版权申明