KBU1006 [TSC]
Single Phase 10 AMPS. Silicon Bridge Rectifiers; 单相10安培。硅桥式整流器
| 型号： | KBU1006 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Single Phase 10 AMPS. Silicon Bridge Rectifiers |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBU1001 THRU KBU1007
Single Phase 10 AMPS. Silicon Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
10.0 Amperes
KBU
Features
.185(4.7)
.165(4.2)
.935(23.7)
.895(22.7)
.280(7.1)
.260(6.6)
ꢀ UL Recognized File # E-96005
ꢀ High surge current capability
ꢀ Ideal for printed circuit board
ꢀ Reliable low cost construction technique
results in inexpensive product
.160(4.1)
.140(3.6)
.085(2.2)
.065(1.7)
450
.70(17.8)
.66(16.8)
.455(11.3)
.405(10.3)
.760(19.3)
MAX
ꢀ High temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
ꢀ Weight: 8 grams
.165(4.2)
.150(3.8)
1.0(25.4)
MIN
.260(6.8)
.180(4.5)
.220(5.6)
.180(4.6)
.052(1.3)
.048(1.2)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
KBU KBU KBU KBU KBU KBU KBU
1001 1002 1003 1004 1005 1006 1007
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 200 400 600 800 1000
V
V
V
VRRM
VRMS
VDC
35
70 140 280 420 560 700
Maximum DC Blocking Voltage
50 100 200 400 600 800 1000
Maximum Average Forward Rectified Current
@TA = 55℃
10.0
A
A
V
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 10A
300
1.1
IFSM
VF
IR
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage @ TA=100℃
10
500
2.2
uA
uA
℃/W
℃
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
RθJC
TJ
-55 to +125
TSTG
℃
-55 to +150
Note: Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate.
- 688 -
RATINGS AND CHARACTERISTIC CURVES (KBU1001 THRU KBU1007)
FIG.1- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
350
300
12
10
8
Tj=250C
8.3ms Single Half Sine Wave
250
200
150
100
50
6
4
MOUNTED ON 4X4 INCH
COPPER PC BOARD
0.5"(12.7mm)LEAD LENGTH
2
0
0
10
150
0
5
20
50
100
50
100
2
1
AMBIENT TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER BRIDGE ELEMENT
100
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
40
20
10
Tj=1000C
10
4
2
1
1
0.4
Tj=250C
Tj=250C
0.2
0.1
8.3ms Single Half Sine Wave
0.1
0
20
40
60
80
100
120
140
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
INSTANTANEOUS FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
- 689 -
相关型号：
KBU1006G-LF
Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE
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