LL4935G [TSC]
1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers; 1.0 AMP的表面安装玻璃钝化整流硅
| 型号： | LL4935G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL4933G THRU LL4937G
1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers
Voltage Range
50 to 600 Volts
Current
1.0 Ampere
MELF
Features
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Plastic package has carries underwriters
laboratory flammability classification 94V-0.
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Surge overload rating to 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive
product
ꢀ
High temperature soldering guaranteed:
260OC / 10 seconds at terminals.
Mechanical Data
ꢀ
Solderability per MIL-STD-750, method
208 at terminals.
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Mounting position: Any
Weight: 0.12 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
LL
LL
LL
LL
LL
Type Number
Units
4933G 4934G 4935G 4936G 4937G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TA = 75℃
1.0
A
A
V
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
30
IFSM
1.2
VF
IR
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage @ TA=100℃
5
uA
uA
nS
pF
℃/W
℃
100
150
15
Maximum Reverse Recovery Time(Note 3)
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance (Note 2)
Trr
Cj
RθJC
TJ,TSTG
60
Operating and Storage Temperature Range
- 65 to + 150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to case. Mount on 0.2” x 0.2” Cu-pad on P.C.B.
3. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
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RATINGS AND CHARACTERISTIC CURVES (LL4933G THRU LL4937G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.5- TYPICAL FORWARD CHARACTERISTICS
1.0
0.8
0.6
0.4
20
10
3
1
P.C.B. MONTED ON 0.2X0.2"
(5.0X5.0mm)COPPER AREAS PADS
0.2
0
0.3
Tj=25oC
0
25
50
75
100
125
150
175
Pulse Width=300
1% Duty Cycle
s
AMBIENT TEMPERATURE. (oC)
0.1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.03
0.01
30
20
10
0
TJ=750C
8.3ms Single Half Sine Wave
JEDEC Method
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL REVERSE CHARACTERISTICS
100
1.0 CYCLE
1
2
4
6
8
10
20
40 60 80 100
TJ=1000C
NUMBER OF CYCLES AT 60Hz
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
20
10
Tj=250C
1
TJ=250C
f=1 MHz
Vsig=50mVp-p
0.1
1
0
20
40
60
80
100
120
140
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
REVERSE VOLTAGE. (V)
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