MBR1060CT [TSC]
10.0 AMPS. Schottky Barrier Rectifiers; 10.0安培。肖特基势垒整流器
| 型号： | MBR1060CT |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 10.0 AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1030CT THRU MBR10200CT
10.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
30 to 200 Volts
Current
10.0 Amperes
TO-220
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR MBR MBR
1030 1035 1040 1045 1050 1060 1010 1015 1020
CT CT CT CT CT CT 0CT 0CT 0CT
Type Number
Symbol
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30 35 40 45 50 60 100 150 200
21 24 28 31 35 42 70 105 140
30 35 40 45 50 60 100 150 200
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
I(AV)
IFRM
10
32
A
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
IRRM
VF
120
0.5
A
A
V
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
IF=5A, TC=25oC
IF=5A, TC=125oC
0.70
0.57
0.80
0.65
0.85 0.88 0.99
0.75 0.78 0.87
(Note 2)
Maximum Instantaneous Reverse Current
@ Tc =25℃ at Rated DC Blocking Voltage
(Note 2)
0.1
0.8
0.2
IR
mA
Voltage Rate of Change (Rated VR)
dV/dt
V/uS
℃/W
℃
10,000
1.5
Maximum Typical Thermal Resistance (Note 3)
RθJC
Operating Junction Temperature Range
Storage Temperature Range
TJ
-65 to +150
-65 to +175
℃
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
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RATINGS AND CHARACTERISTIC CURVES (MBR1030CT THRU MBR10200CT)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.1- FORWARD CURRENT DERATING CURVE
180
150
120
90
6
5
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
4
3
60
2
1
0
30
0
0.1
1
10
100
0
50
100
150
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
40
10
Tj=250C
10
MBR1050CT-MBR1060CT
Tj=1250C
1
MBR1030CT-MBR1045CT
MBR10100CT
1
Tj=750C
0.1
MBR10150CT
MBR10200CT
0.1
0.01
Tj=250C
Pulse Width=300
1% Duty Cycle
s
0.001
0.01
0
20
40
60
80
100
120
140
1.2
0.7 0.8 0.9 1.0 1.1
0
0.1 0.2 0.3 0.4 0.5
0.6
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
PER LEG
100
FIG.5- TYPICAL JUNCTION CAPACITANCE
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10.0
1,000
500
1
0.1
100
0.1
1.0
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
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